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    NATIONAL SEMICONDUCTOR MARKING CODE SOD Search Results

    NATIONAL SEMICONDUCTOR MARKING CODE SOD Result Highlights (5)

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    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NATIONAL SEMICONDUCTOR MARKING CODE SOD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode Capacitance

    Abstract: No abstract text available
    Text: BAT15V-02V VISHAY Vishay Semiconductors Schottky Diodes Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description Designed for RF-signal level detection and RF-mixer


    Original     		PDF BAT15V-02V BAT15V02V OD523 D-74025 26-Sep-02 Diode Capacitance

    Diode Capacitance

    Abstract: No abstract text available
    Text: BAT15V-02V VISHAY Vishay Semiconductors Schottky Diodes Description Designed for RF-signal level detection and RF-mixer application the low barrier Schottky Diode BAT15V02V can be used in wireless and mobile systems up to 12 GHz. The small space saving SOD523 package is a contribution to the continuously growing integration density


    Original     		PDF BAT15V-02V BAT15V02V OD523 D-74025 24-Sep-03 Diode Capacitance

    BAR63V-02V

    Abstract: BAR63V-02V-GS08
    Text: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description Characterized by a very low reverse Capacitance the


    Original     		PDF BAR63V-02V BAR63V-02V OD523 D-74025 23-Oct-02 BAR63V-02V-GS08

    85639

    Abstract: No abstract text available
    Text: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description Characterized by a very low reverse Capacitance the


    Original     		PDF BAR63V-02V BAR63V-02V D-74025 26-Sep-02 85639

    Untitled

    Abstract: No abstract text available
    Text: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 e3 > 20 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package height = 0.4 mm • Typ. capacitance 12 pF VR = 2.5 V; f = 1 MHz


    Original     		PDF VESD05A1B-02Z OD923 OD923 2002/95/EC 2002/96/EC VESD05A1B-02Z VESD05A1B-02Z-GS08 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • • • • • • • • • • • Single-line ESD-Protection device ESD-Immunity acc. IEC 61000-4-2 e3 > 20 kV contact discharge > 30 kV air discharge Tiny SOD923 package


    Original     		PDF VESD05A1B-02Z OD923 OD923 2002/95/EC 2002/96/EC VESD05A1B-02Z VESD05A1B-02Z-GS08 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-Protection device • ESD-Immunity > 20 kV e3 IEC 61000-4-2 contact discharge • Tiny SOD923 package • Package Height = 0.4 mm • Typ. capacitance 12 pF (VR = 2.5 V; f = 1 MHz)


    Original     		PDF VESD05A1B-02Z OD923 OD923 2002/95/EC 2002/96/EC VESD05A1B-02Z VESD05A1B-02Z-GS08 08-Apr-05

    VESD05A1B-02Z-GS08

    Abstract: No abstract text available
    Text: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode Array in SOD923 Features • Single-line ESD-Protection device • ESD-Immunity > 20 kV e3 IEC 61000-4-2 contact discharge • Tiny SOD923 package • Package Height = 0.4 mm • Typ. capacitance 12 pF (VR = 2.5 V; f = 1 MHz)


    Original     		PDF VESD05A1B-02Z OD923 OD923 2002/95/EC 2002/96/EC VESD05A1B-02Z VESD05A1B-02Z-GS08 VESD05A1B-0s 08-Apr-05

    BA892V-02V-GS08

    Abstract: BA892V-02V
    Text: BA892V-02V VISHAY Vishay Semiconductors Band Switching Diodes Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description The main purpose of the BA892V-02V is the Band


    Original     		PDF BA892V-02V BA892V-02V BA892V02V D-74025 26-Sep-02 BA892V-02V-GS08

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-02V VISHAY Vishay Semiconductors RF PIN Diode Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description Characterized by low reverse Capacitance the PIN


    Original     		PDF BAR64V-02V BAR64V-02V D-74025 26-Sep-02

    BAR65V-02V

    Abstract: BAR65V-02V-GS08
    Text: BAR65V-02V VISHAY Vishay Semiconductors RF PIN Diode Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description With the very low forward resistance combined with a


    Original     		PDF BAR65V-02V BAR65V-02V OD523 D-74025 23-Oct-02 BAR65V-02V-GS08

    BAR64V-02V

    Abstract: BAR64V-02V-GS08
    Text: BAR64V-02V VISHAY Vishay Semiconductors RF PIN Diode Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description Characterized by low reverse Capacitance the PIN


    Original     		PDF BAR64V-02V BAR64V-02V OD523 D-74025 23-Oct-02 BAR64V-02V-GS08

    BAT15V-02V

    Abstract: Diode Capacitance
    Text: BAT15V-02V VISHAY Vishay Semiconductors Schottky Diodes Description Designed for RF-signal level detection and RF-mixer application the low barrier Schottky Diode BAT15V02V can be used in wireless and mobile systems up to 12 GHz. The small space saving SOD-523 package is a contribution to the continuously growing integration density on the PCB and the increasing quality standards.


    Original     		PDF BAT15V-02V BAT15V02V OD-523 D-74025 27-Apr-04 BAT15V-02V Diode Capacitance

    BAS581-02V-GS08

    Abstract: No abstract text available
    Text: BAS581-02V VISHAY Vishay Semiconductors Schottky Diode in SOD-523 Features • These diodes feature very low turn-on voltage and fast switching. • Space saving SOD-523 package 1 1 2 Mechanical Data Case:SOD-523 Plastic Package Molding Compound Flammability Rating:


    Original     		PDF BAS581-02V OD-523 OD-523 BAS581-02V BAS581-02V-GS08 D-74025 02-Dec-03

    Untitled

    Abstract: No abstract text available
    Text: BAR65V-02V VISHAY Vishay Semiconductors RF PIN Diode Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description With the very low forward resistance combined with a


    Original     		PDF BAR65V-02V BAR65V-02V D-74025 26-Sep-02

    BAR63V-02V

    Abstract: BAR63V-02V-GS08 BAR63V-02V-GS18
    Text: BAR63V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-02V OD-523 BAR63V-02V OD-523 D-74025 25-Aug-04 BAR63V-02V-GS08 BAR63V-02V-GS18

    BAR63V-02V

    Abstract: BAR63V-02V-GS08 BAR63V-02V-GS18
    Text: BAR63V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-02V OD-523 BAR63V-02V OD-523 2002/95/EC 2002/96/EC D-74025 29-Jun-05 BAR63V-02V-GS08 BAR63V-02V-GS18

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-02V OD-523 BAR63V-02V OD523 D-74025 12-Sep-03

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-02V OD-523 BAR63V-02V OD523 D-74025 12-Dec-03

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-02V OD-523 BAR63V-02V OD523 D-74025 24-Nov-03

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-02V OD-523 BAR63V-02V OD-523 OD-523) D-74025 26-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: BAS40-02V VISHAY Vishay Semiconductors Schottky Diode in SOD-523 Features • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		PDF BAS40-02V OD-523 OD-523 BAS40-02V BAS40-02V-GS08 D-74025 02-Dec-03

    BAS581-02V

    Abstract: BAS581-02V-GS18
    Text: BAS581-02V Vishay Semiconductors Small Signal Schottky Diodes, Single Features • These diodes feature very low turn-on voltage and fast switching. • Space saving SOD-523 package • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF BAS581-02V OD-523 2002/95/EC 2002/96/EC BAS581-02V-GS18 BAS581-02V-GS08 D-74025 29-Jun-05 BAS581-02V

    Untitled

    Abstract: No abstract text available
    Text: BAR65V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description With the very low forward resistance combined with a low reverse capacitance the BAR65V-02V is ideal for RF-signal switching. Depending on the forward current If the forward resistance (rf) can be reduced to


    Original     		PDF BAR65V-02V OD-523 BAR65V-02V OD523 D-74025 12-Sep-03