NC 1350 Search Results
NC 1350 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CC1350F128RGZT |
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SimpleLink Ultra-Low Power Dual Band Wireless Microcontroller 48-VQFN -40 to 85 |
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AMC1350QDWVRQ1 |
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Automotive, ±5-V input, precision voltage sensing reinforced isolated amplifier 8-SOIC -40 to 125 |
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CC1350F128RHBT |
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SimpleLink Ultra-Low Power Dual Band Wireless Microcontroller 32-VQFN -40 to 85 |
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AMC1350DWVR |
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±5-V input, precision voltage sensing reinforced isolated amplifier 8-SOIC -40 to 125 |
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AMC1350DWV |
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±5-V input, precision voltage sensing reinforced isolated amplifier 8-SOIC -40 to 125 |
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NC 1350 Price and Stock
SiTime Corporation SIT3372AC-2E9-25NC135.000000MEMS OSC VCXO 135.0000MHZ LVDS |
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SIT3372AC-2E9-25NC135.000000 | 1 |
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SiTime Corporation SIT3372AC-4B2-30NC135.000000MEMS OSC VCXO 135.0000MHZ HCSL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT3372AC-4B2-30NC135.000000 | 1 |
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SiTime Corporation SIT3372AC-4B3-33NC135.000000MEMS OSC VCXO 135.0000MHZ HCSL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT3372AC-4B3-33NC135.000000 | 1 |
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SiTime Corporation SIT3372AI-4E9-30NC135.000000MEMS OSC VCXO 135.0000MHZ HCSL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT3372AI-4E9-30NC135.000000 | 1 |
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SiTime Corporation SIT3372AC-1E9-25NC135.000000MEMS OSC VCXO 135.0000MHZ LVPECL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT3372AC-1E9-25NC135.000000 | 1 |
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NC 1350 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOP VIEW Not to Scale 8 +VS FB 2 7 OUT –IN 3 6 NC +IN 4 5 –VS 07040-001 PD 1 NC = NO CONNECT Figure 1. 8-Lead LFCSP (CP) ADA4857-1 FB 1 8 PD –IN 2 7 +VS +IN 3 6 OUT –VS 4 5 NC NC = NO CONNECT 07040-002 TOP VIEW (Not to Scale) Figure 2. 8-Lead SOIC (R) |
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16-lead ADA4857-1/ADA4857-2 ADA4857-1 CP-16-4 | |
Contextual Info: SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.28 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D APPLICATIONS |
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SiHA15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration Single APPLICATIONS D |
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SiHF15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D APPLICATIONS |
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SiHA15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration Single APPLICATIONS D |
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SiHF15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D APPLICATIONS |
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SiHA15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SIHF15N60E
Abstract: sihf15n60e-e3 smps 220 - s12 SIHF15n60
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SiHF15N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihf15n60e-e3 smps 220 - s12 SIHF15n60 | |
Contextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration Single D TO-220 FULLPAK |
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SiHF15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
U860 diode
Abstract: diode U860 diode avalanche DSA U860 tc 40138 DIODE DSA 18 diode avalanche DSA VRRM 2300 DSA VRRM 2300 G DSA 908-44 A G diode avalanche DSA 603
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OCR Scan |
00Mfl3Dfl To-50Â 400-11KC, D2950 U860 diode diode U860 diode avalanche DSA U860 tc 40138 DIODE DSA 18 diode avalanche DSA VRRM 2300 DSA VRRM 2300 G DSA 908-44 A G diode avalanche DSA 603 | |
Contextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.28 Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D TO-220 FULLPAK |
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SiHF15N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHB15N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17 |
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SiHB15N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHB15N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHP15N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17 |
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SiHP15N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHP15N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17 |
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SiHP15N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration |
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SiHP15N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration |
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SiHB15N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHB15N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17 |
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SiHP15N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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SiHP15N60E 2002/95/EC O-220AB 11-Mar-11 | |
sihf15n60e-e3
Abstract: s13002
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SiHF15N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 sihf15n60e-e3 s13002 | |
SIHF15N60EContextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single Note * Pb containing terminations are not RoHS compliant, exemptions |
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SiHF15N60E 2002/95/EC O-220 11-Mar-11 |