NCC KM Search Results

TMS6264L-15

Abstract: tms6264l 0C25 TMS6264L-10
Contextual Info: TMS6264L 65,536-BIT LOW POWER STATIC RANDOM-ACCESS MEMORY SEPTEMBER 1988— REVISED DECEMBER 1989 N, NW, AND OH PA CK A G ES TOP VIEW Organization . . . 8K x 8 c ro 00 Single 5-V Power Supply (10% Tolerance) NCC A12C 2 A7C 3 A6C 4 A5Ü 5 All Inputs/Outputs Fully T TL Compatible

forward converter using active clamp

Abstract: TCDT1101GB ncc cap ETD39 12v fbu 8k L4990 L6380 12V-4A ETD39 220vac to 220vac voltage converter schematic
Contextual Info: APPLICATION NOTE LOW COST ACTIVE CLAMP FOR HIGH FREQUENCY APPLICATIONS by Nicola Tricomi INTRODUCTION Purpose of this application is to describe a singleswitch forward converter with two outputs, 5V20A and 12V-4A, with an active clamp system. This is an application close to Personal Computer

ETD39 12v

Abstract: FBU FAGOR 4m 1W zener diode OF SGS-THOMSON capacitor KMH 9t18 etd39 KMH Series bc337 pin out diagram TCDT1101GB LXF CAPACITORS
Contextual Info: APPLICATION NOTE LOW COST ACTIVE CLAMP FOR HIGH FREQUENCY APPLICATIONS by Nicola Tricomi INTRODUCTION Purpose of this application is to describe a singleswitch forward converter with two outputs, 5V20A and 12V-4A, with an active clamp system. This is an application close to Personal Computer

TCDT1101GB

Abstract: FBU FAGOR 4m STK2N60 9t18 4AC16 PCIM96 34t1 ETD39 TRANSFORMER cc10n zener 1n4148
Contextual Info: APPLICATION NOTE LOW COST ACTIVE CLAMP FOR HIGH FREQUENCY APPLICATIONS by Nicola Tricomi INTRODUCTION Purpose of this application is to describe a singleswitch forward converter with two outputs, 5V20A and 12V-4A, with an active clamp system. This is an application close to Personal Computer

D428

Abstract: km75c10 QIC-11
Contextual Info: KM75C104A CMOS PROGRAMMABLE FLAG FIFO Programmable-Flags, 4 K X 9 FIFO FEATURES DESCRIPTION • First-ln-First-Out Dual Pori Memory — 4K x 9 Organization • Very High Speed independent of depth/w idth — 30ns Cycle Time • Two Fully configurable Alm ost Full and Alm ost

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM69P819 Product Preview 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM T h e M C M 69 P 8 1 9 is a 4M bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the PowerPC™ and other

km418c256

Abstract: KM418C256J
Contextual Info: PRELIMINARY KM418C256 CMOS DRAM 256'KX 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 8 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 18 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

Contextual Info: SAMSUNG ELECTRONICS INC bME D • T'ìbMlMa Q0142ß7 G3T PRELIMINARY KM75C04A CMOS FIFO First-in First-out FIFO 4 K x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 4K x 9 organization • Very high speed independent of depth/width

T1A 250v

Abstract: his-8a Jamicon capacitor bel t1a 250v m7a90 0711-PN UTWHS ee-25 tuv philips zener diode ltec capacitor
Contextual Info: SA06L48-V Specification MODEL NO.: CUSTOMER P/N: DESCRIPTION: ISSUED DATE: REVISION NO.: Page 1 of 1 SA06L48-V SWITCHING ADAPTER September 5, 2002 01 TABLE OF CONTENTS 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 INPUT REQUIREMENTS OUTPUT REQUIREMENTS EFFICIENCY PROTECTION REQUIREMENTS

Contextual Info: PRELIMINARY KM75C04A CMOS FIFO First-in First-out FIFO 4 K x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 4K x 9 organization • Very high speed independent of depth/width — 25ns cycle times • Asynchronous and simultaneous read and write

Contextual Info: WT41-E DATA SHEET Tuesday, 08 October 2013 Version 1.4 Copyright 2000-2013 Bluegiga Technologies All rights reserved. Bluegiga Technologies assumes no responsibility for any errors which may appear in this manual. Furthermore, Bluegiga Technologies reserves the right to alter the hardware, software, and/or specifications

Contextual Info: TOSHIBA TENTATIVE TC55V4196FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 18-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4196FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM

ETD39 12v

Abstract: TCDT1101GB ETD39 L4990 240VDC VOLtage regulator etd39 vertical L6380 12V-4A AN881 LXF CAPACITORS
Contextual Info: AN881 Application note Low cost active clamp for high frequency applications Introduction Purpose of this application is to describe a singleswitch forward converter with two outputs, 5V- 20A and 12V-4A, with an active clamp system. This is an application close to personal computer and logic cards power supplies. For the

Contextual Info: PRELIMINARY CMOS MASK ROM KM23C2100H 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 1 3 1 ,0 7 2 x 1 6 • Fast access time: 100ns (max.) • Supply voltage: single + 5V

Contextual Info: KM23C4100H FP CMOS MASK ROM 4M-Bit (512K.X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (max.) • Supply voltage: single + 5V • Current consumption

KM23C4100B

Contextual Info: KM23C4100B CMOS MASK ROM 4M-Bit 512Kx 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: KM23C4100H CMOS MASK ROM 4M-Bit 512K.X 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (m ax.) • Supply voltage: single + 5V • Current consumption

SMD e9

Abstract: FTX751S Quartz Crystal 10mhz
Contextual Info: FRONTER ELECTRONICS CO.LTD. is* >jL ife -J- t ^ RoHSProdjCs ç QUARTZ CRYSTAL RESONATOR S f l 4S * H ft « «I g DIM ENSIO NS Unit:mm) FTX751S TYPE 7. 0±0 2 ?T 32.576M LAND PATTERN LAYOUT (EXAMPLE) ( ) o-r — v*. ri I _ fM #1 <t o p v i e w > w «t 2

LA 7376

Contextual Info: MADE I* A M ERICAN ►-O JE C T IO N J! I ¿3 c k 1 n c t t i*D f 3 c _ L L c f □ 1 t c aLj 1 c u /. MATE'S W/FR HOOS/A/G 4 3 0 3 2 4 t Z — [□ •— PART‘D COMPLY W/Tt* AM R S O lO e M B iU T f SPEC. *!09-R -<3 V— % ' - \ -.0 0 5 .Z O Z NON-ACCUM

Contextual Info: PRELIMINARY CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • The KM23C8100HFP1 is a fully static mask program m a­ ble ROM fabricated using s ilic o n gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit

Contextual Info: U B I Preliminary Information X24C01 1K 128x8 Bit Serial E2PROM FEATURES DESCRIPTION * 3V to 5.5V Power Supply * Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 pA * Internally Organized 128 x 8 * 2 Wire Serial Interface —Bidirectional Data Transfer Protocol

Contextual Info: LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH SPEED, PRECISION OPERATIONAL AMPLIFIERS D 3 1 9 5 , F E B R U A R Y 1 9 8 9 - R E V I S E D JU N E 1991 Maximum Equivalent Input Noise Voltage: 3 .8 nV/VRz at 1 kHz 4 .5 nV/\/Hz at 10 Hz DW SMALL-OUTLINE PACKAGE

JPP-95

Abstract: t3.15A/250V optocoupler 356T TEA1733 smd diode MARKING U3 SOD123 2KBP206G NCC KY NCC kmg smd diode GW t3.15A/250V fuse
Contextual Info: UM10385 GreenChip 65 W TEA1733 L T demo board Rev. 02 — 2 June 2010 User manual Document information Info Content Keywords Notebook adapter, TEA1733(L)T, Low standby power, High efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics, and Printed-Circuit

Contextual Info: UM10421 GreenChip 65 W TEA1733LT/T printer reference board Rev. 1 — 17 December 2010 User manual Document information Info Content Keywords Printer adapter, TEA1733LT/T, low standby power, high-efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics and Printed-Circuit