ND20 Search Results

d2020e

Contextual Info: SILICONIX INC 18E I Ô5S473S 0014053 fy S iG c o n ix JLm in c o rp o ra te d ND2020 SERIES "T-2.7-7. S N-Channel Depletion-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER 1 • V BR)DSV fDS(ON) (V) (« ) Id (A)

ND2020L

Contextual Info: A flg S ä VDDQ SERIES DIE N-Channel Depletion-Mode MOS Transistors VDDQ1CHP* VDDQ2CHP* ND2012L ND2020L ‘ Meets or exceeds specification for all part numbers listed below 0.038 ro.965; Source Pad For additional design information please consult the typical performance curves VDDQ20.

Contextual Info: Te m ic siiiconix_ ND2012L/2020L N-Channel Depletion-Mode MOS Transistors Product Summary Part Number v BR DSV ND2012L Min (V) r i)S(on) Max (£2) 200 ND2020L Id Vg s (oB) (V) (A) 12 -1.5 to - 4 0.16 20 -0.5 to -2.5 0.132 For applications information see AN901, page 12-46.

AN901

Abstract: ND2012L ND2020 ND2020L 37807
Contextual Info: ND2012L/2020L Siliconix NĆChannel DepletionĆMode MOS Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 -1.5 to -4 0.16 20 -0.5 to -2.5 0.132 200 ND2020L For applications information see AN901. Features

ND2020

Abstract: ND2012L ND2020L TA 7061
Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 –1.5 to –4 0.16 20 –0.5 to –2.5 0.132 200 ND2020L Features Benefits Applications D D D D D D D D D

Contextual Info: BlS S & VDDQ20 N-Channel _ Depletion-Mode MOSFET TYPE PACKAGE DEVICE Single TO-92 TO-226AA • ND2012L, ND2020L Single Chip • Available as VDDQ1CHP, VDDQ2CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current vs. Gate-Source Cutoff Voltage

C-1555

Abstract: N1230 TO206AC
Contextual Info: SILICONIX INC 18E [I 5554735 0014051 5 ffT 'S ilic o n ix JtmM in c o rp o ra te d ND2012 SERIES 'T - lS l- 'Z S N-Channel Depletion-M ode M OS Transistors BOTTOM VIEW TO-92 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER V BR DSV fDS(ON) (V) (« > Id

N-Channel Depletion-Mode MOSFET

Abstract: TA 7061 52426 ND2020L
Contextual Info: Temic ND2012L/2020L Semiconductors N-Channel Depletion-Mode MOSFET Transistors Product Summary P a rt N um ber V<BR DSV M in V) ND2012L ND2020L 200 Features • • • • • High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 Q Low Input and Output Leakage

2020L

Abstract: Nd202 ND2012L ND2020 ND2020L N-Channel Depletion-Mode MOSFET
Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 –1.5 to –4 0.16 20 –0.5 to –2.5 0.132 200 ND2020L Features Benefits Applications D D D D D D D D D

nd2020

Abstract: ND2012L ND2020L S-52426 2020L
Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V

Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V

ND2020L

Contextual Info: OfSSS& ND2012L, ND2020L N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BRJDSS rDS(ON (O) •d (A) ND2012L 200 12 0.16 ND2020L 200 20 0.132 3 DRAIN Performance Curves: VDDQ20 3 .I— i— , 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

VDD-1000

Abstract: N04 U1 n057 b n017 PEEL programming ND10 ND12 TQ8033 304-pin dimensions bga nd38
Contextual Info: T H I Q U I N T S E M I C O N D U C T O R , I N C K g TQ8033 PRELIMINARY DATA SHEET Features > 1.5 Gb/s/port data bandwidth; >50 Gb/s aggregate bandwidth • Fully differential data path with 64 inputs and 33 outputs • Non-blocking architecture • 150 ps delay match

pt100 interface current source multiplexer

Abstract: pt100 sensor with adc 4-20mA pt100 sensor interface with microcontroller DN2540 NE43 XTR108 XTR108EA Voltage to Current Converter dual 4-20mA scheme xtr 110 RTD signal conditioning theory
Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V

Contextual Info: XTR XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V

N-Channel Depletion-Mode MOSFET

Abstract: normal scr operation depletion-mode depletion mode current limiter mosfet vs SCR AN901 mosfet modern applications voltage regulator mosfet 1,2 n channel depletion MOSFET depletion mode mosfet
Contextual Info: AN901 Siliconix DepletionĆMode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction MOSFET may also perform in the enhancementĆmode. The nĆchannel enhancementĆmode MOSFET Figure 1c , requires a positiveĆpolarity gate voltage

N-Channel Depletion-Mode MOSFET

Abstract: P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering depletion p mosfet n mosfet depletion
Contextual Info: AN901 Depletion-Mode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction A principal advantage of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the

RT-DA502PRA

Abstract: RT-530 RT-DC302PR RT-DC502PRA RT-DA1012 RT-DA402PR RT-DDA302PRA PM 5.08/2/sanyo led display sl
Contextual Info: OPTOELECTRONIC PRODUCTS RODAN V - / fMifr : & & ^ + S ^ f f i ^ W * M S S l f c 5 £ ^ * ± 0 K A Y A ELECTR IC INDUSTRIES CO., L T D j M r ' g ' f F • ± l T 5 I J l p an : (3 £*<»*«##( 5#) ° INTRODUCTION: Since 1974 our company-RODAN (TAIWAN) LTD. has been cooperating in technic with Japan

working of 80286

Abstract: CA82C37A 80286 register organization B5061 CA82C37
Contextual Info: TUNDRA CA82C37A PROGRAMMABLE DMA CONTROLLER Pin and functional compatibility with the industry standard 8237/8237A Fully static, high speed - 10,8 and 5 MHz versions available Low power CMOS implementation TTL input/output compatibility Compatible with 8080/85,8086/88,80286/386 and

pt100 sensor interface with microcontroller

Abstract: PT100 RTD signal conditioning noise problem pt100 sensor with adc 4-20mA pt100 rtd spi pt100 interface WITH ADC maxim pt100 interface RTD SENSING CIRCUIT 4-20mA maxim 4-20ma receiver il300 national instruments piezoelectric pressure sensor
Contextual Info: Maxim > App Notes > A/D and D/A CONVERSION/SAMPLING CIRCUITS AMPLIFIER AND COMPARATOR CIRCUITS SIGNAL GENERATION CIRCUITS Keywords: 4-20mA, current loop, current loops, DAC, ADC, current DAC, isolation, 2-wire, signal conditioning, low power, D/A, industrial control, EMI, transducers, current transmission, transmitter

FMC16100

Abstract: smbus zilog microcontroller FMC161 pmbus slave model Nd201 UM0128 Z8FMC16100 ND2017A24 ZILOG Z8 battery monitor
Contextual Info: Z8 Encore! MC Implementation of SMBus Master/Slave Protocol Application Brief AB000201-0707 Challenge The System Management Bus SMBus interface is used by Smart Batteries to pass Smart Battery Data (SBD) to external devices and systems. Zilog Z8 Encore! MC™ microcontrollers provide low-cost

Voltage to Current Converter dual 4-20mA scheme

Abstract: pt100 rtd spi UC 493 pt100 multiplexer DN2540 NE43 XTR108 XTR108EA RTD PT100 temp Vs resistance relationship 4-20ma scheme
Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V

MIL-I-8835A

Abstract: camtex trays ND07071 camtex trays QFP nd r304 E20-02080-00 ITW Camtex ceramic QFP Package 100 lead exposed QFP 144 CAMTEX
Contextual Info: January 1998, ver.3 Introduction Application Note 71 Surface-mount J-lead and quad flat pack QFP devices are now common on boards because of their density, size, and cost benefits. A few precautions, however, are necessary to protect these devices from

idt5p49ee502

Abstract: VFQFPN land pattern
Contextual Info: DATASHEET VERSACLOCK LOW POWER CLOCK GENERATOR IDT5P49EE502 Description Features The IDT5P49EE502 is a programmable clock generator intended for low power, battery operated consumer applications. There are four internal PLLs, each individually programmable, allowing for up to five differrent output