NE 06L Search Results

ATA13

Contextual Info: HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT7026S/L Integrateci Device Technology, Inc FEATURES: multiplexed bus com patibility IDT7026 easily expands data bus width to 32 bits or m ore using the M aster/S lave select w hen cascading m ore than o ne d e vice

ne 06l

Contextual Info: STD16NE06L N - CHANNEL 60V - 0.07 £2 - 16A - DPAK _STripFET " POWER MOSFET PRELIMINARY DATA TYPE S TD 16N E 06L V dss R dS oii Id 60 V < 0.085 Q. 16 A • . . . . TYPICAL R D S ( o n ) = 0.07 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C

Contextual Info: 7 ^ 2 3 7 0D4L50L4 f l t. 3 •SGTH SGS-THOMSON ¡LiOT s«S ¡5 7 STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP 50N 06L STP50N 06LFI V dss R d s ( o ii Id 60 V 60 V < 0 .0 2 8 a < 0 .0 2 8 Q 50 A 2 1 IK ■ TYPICAL RDS(on) = 0.024 Q

HVR3509

Abstract: kbp 3510 DF101 3505G P6KE 6CA GENERAL SEMICONDUCTOR CK 6CA SMd 6CA smd diodes ke 48 model PB201M smd 8ca
Contextual Info: iiA irr PRODUCT PACKAGING SPECIFICATIONS AMMOPAK PACKAGING FOR TRANSISTORS TO-92 PLASTIC CASE Carrier tape Specification of carrier tape T h e c a rrie r tap e c o n s is ts of a c a r d ­ b oard strip with s p ro c k e t holes. The p ins of th e tr a n s is to rs are s e c u re d

Contextual Info: fax id: 5204 CY7C138 CY7C139 CYPRESS 4K x 8/9 Dual-Port Static RAM Features T ru e D u al-P o rted m em o ry ce lls w h ich allow sim u lta n e o u s read s o f th e sa m e m e m o ry location 4 K x 8 o rg an iza tio n C Y 7 C 1 3 8 4 K x 9 o rg an iza tio n (C Y 7 C 1 3 9 )

CY7C006

Abstract: CY7C016
Contextual Info: fax id: 5207 ,.V.Ï.Ï.V.^ y nr' CY7C006 CY7C016 Æ C Y P R E S S 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow s im u ltan eo u s read s o f th e s a m e m e m o ry location 16K x 8 o rg an iza tio n C Y 7 C 00 6

70914S

Contextual Info: HIGH-SPEED 36K 4K x 9 SYNCHRONOUS DUAL-PORT RAM Integrated Device Technology, Inc. FEATURES: • H igh-speed clock-to-data output tim es — M ilitary: 20/25ns (max.) — C om m ercial: 12/15/20ns (max.) • Low -power operation — IDT70914S Active: 800 mW (typ.)

mc 741

Abstract: BBO-320-1000P-9113-C
Contextual Info: O í l T M H e C K M e 6 e c K O H T a K T H b ie Ü O M e H K B b iic n io H a T e jik i J i a i y p a H a n p ^ D K e H iie m n a p a M e T p b i n u T a m is i nocTosiHHoro TOKa I o m o p| C x e M b l n O flK / lK D H e H M fl C H G T b ip b M Ç l Bbl 3 0 ,0 ,3 M M

Z952

Abstract: c144 1S84 C144 e 5v CY7C144 CY7C145 IDT7005
Contextual Info: fax id: 5205 ,.V.Ï.Ï.V.^ y nr' C Y 7C 145 Æ C Y 7C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow sim u ltan eo u s read s o f th e s a m e m e m o ry location 8K x 8 o rg an iza tio n C Y 7 C 14 4

c1449

Abstract: C144 ESS CY7C144 CY7C145 IDT7005 1BHC
Contextual Info: fax id: 5205 ,.V.V.V.V.^ !!rnr' C Y 7C 145 C Y 7C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow sim u ltan eo u s read s o f th e s a m e m e m o ry location 8K x 8 o rg an iza tio n C Y 7 C 14 4

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

cy7c131-55nc

Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­

Zl13

Abstract: ZL12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140 C1308 wj 75
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­

Contextual Info: IDT 7132SA/LA IDT 7142SA/LA CMOS DUAL-PORT RAM 16K 2K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H ig h -s p e e d a c c e s s — T h e ID T 7 1 3 2 /ID T 7 1 4 2 a re h ig h -s p e e d 2 K x 8 du al-port M ilitary: 2 5 /3 0 /3 5 /4 5 /5 5 /7 0 /9 0 /1 0 0 /1 2 0 n s (m a x .)

Contextual Info: HIGH-SPEED 36K 4K x 9-BIT SYNCHRONOUS DUAL-PORT RAM PRELIMINARY IDT70914S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed clock-to-data output times — Military: 20/25ns (max.) — Commercial: 15/20/25ns (max.) • Low-power operation

23N05

Abstract: stk 0055 23n06 23N05L
Contextual Info: 7 ^ 2 ^ 2 3 7 O O M b lB f l S 12 • S G T H STK23N05L STK23N06L SGS-THOMSON *5 7 RÆQ i©[EL[MM©[KS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STK23N 05L STK23N06L . . . . . . ■ . . V dss RDS on Id 50 V 60 V

CLC411A

Contextual Info: CLC411 c Comlinear Corporation High-Speed Video Op Amp with Disable APPLICATIONS: FEATURES typical : • • • • • • • • • • • • • HDTV amplifier video line driver high-speed analog bus driver video signal multiplexer DAC output buffer

Contextual Info: HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM FEATURES: * True Dual-Ported memory cells which allow simultaneous reads of the same memory location * High-speed access * - Military:20125135ns max. - Commercial: 12/15/17120125135ns (max.) Low-power operation - IDT7015S

026R

Abstract: M0192 LSE 019L
Contextual Info: CY7C056V CY7C057V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM E xp a n d ab le d ata bus to 72 b its o r m ore u sing M a s ­ te r/S la v e C hip S ele ct w hen using m o re th an o n e d evice Features • True D u al-P o rted m e m o ry cells w h ich allo w s im u lta ­

Contextual Info: HIG H -S P E E D 8K x 9 D U A L - P O R T IDT701 5S/L STATIC RAM FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads ot the same memory location • High-speed access — Military: 20/25/35ns max. — Commercial: 12/15/17/20/25/35ns (max.)

400S

Abstract: ttl register file
Contextual Info: m IQUAL IK ICA I IONI' RE Q UI RE M E NT S I I REM OV ED I SUPERStU1HG" MIL-M-38510/18(USAF 4 S e p t em be r 1975 M I L IT A RY S P E C I F I CA T IO N M IC R O C I R C U I T S , DIGITAL, TTL, RE GI S TE R FILE, M O NO L I T H I C SILICON INACTIVE FOR NEW DESIGN AFTER DATE OT THIS R E V I S I O n |

Contextual Info: \y HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM IDT7007S/L Integrated Devi ce Technology, Inc. FEATURES: more using the Master/Slave select when cascading more than one device M/S = H for BUSY output flag on Master, M/S = L for BUSY input on Slave Interrupt Flag

Contextual Info: CY7B138 CY7B139 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-micron BiCMOS for high per­ formance T h e CY7B138 an d CY 7B139 are high­ speed B iC M O S 4K x 8 an d 4K x 9 dualp o rt static RA M s. V arious a rb itration

Contextual Info: HIGH-SPEED 8K x 9 DUAL-PORT IDT7015S/L STATIC RAM I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the sam e m em ory location • H igh-speed access — M ilitary: 20/25/35ns max.