NE 3225 Search Results
NE 3225 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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DFE322520F-R47M=P2 | Murata Manufacturing Co Ltd | Fixed IND 0.47uH 8500mA NONAUTO |
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DFE322520F-2R2M=P2 | Murata Manufacturing Co Ltd | Fixed IND 2.2uH 4400mA NONAUTO |
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DFE322520F-1R0M=P2 | Murata Manufacturing Co Ltd | Fixed IND 1uH 6700mA NONAUTO |
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DFE322520F-1R5M=P2 | Murata Manufacturing Co Ltd | Fixed IND 1.5uH 5200mA NONAUTO |
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REF3225AMDBVREP |
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Enhanced Product 4 Ppm/Degreesc 100 Ua Sot23-6 Series Voltage References 6-SOT-23 -55 to 125 |
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NE 3225 Price and Stock
Industrial Magnetics Inc NE3225NP35MAGNET 0.320"D X 0.250"THICK CYL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NE3225NP35 | Bag |
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Siemens 3NE3225HLS-FUSE INLAY 200A 1000V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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3NE3225 | Bulk | 3 |
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3NE3225 | 6 | 1 |
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3NE3225 | 12 |
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Siemens 3NE3 225Fuse: fuse; 200A; 1kVAC; aR; industrial; NH1; SENTRON |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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3NE3 225 | 11 | 1 |
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NE 3225 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FS9168-015-DS-11_EN JAN 2013 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS9168-015 FS9168 standard code for digital clinical thermometer application FS9168-015 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation |
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FS9168-015-DS-11 FS9168-015 FS9168 | |
ne 4532
Abstract: CTV 3225
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Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW FERRITE CORE PLANAR INDUCTOR PL STRUCTURE 1 2 3 4 5 6 W NE Ferrite core Direction mark Marking Resin filler Coil pattern Electrode IDENTIFICATION PRODUCT CODE BODY COLOR MARKING Black White Alpha Numeric, 3 digits + direction mark |
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D-25578 | |
agilent marking style
Abstract: 3.3uH 1210 size inductor ne 3225 3R3 COIL 3225 22uh 3225 coil marking code 3R3 Marking code PL
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Contextual Info: U630H16XS HardStore 2K x 8 nvSRAM Die Features Description S High-performance CMOS non- The U630H16 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In |
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U630H16XS U630H16 | |
U630H16
Abstract: U630H16XS W2565 2ETA
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U630H16XS U630H16 U630H16XS W2565 2ETA | |
exc3bb102
Abstract: EXCML20A390 EXC3BB601 ne 3225 exccl3225 ne 4532 EXC3BB221 EXCML
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Contextual Info: 7 DRAWING THIS MA D E IN THIRD DRAWING ANGLE 15 UNPUBLI5HED COPYRIGHT 5 6 4 3 PROJECTION 19 RELEASED BY AMP FOR INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST L OC 19 PUBLICATION 47 AD RESERVED. REV I 5 I0 N 5 LTR Z O NE +0 . 03 REVISE L HOUSING MATERIAL. |
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03N0V00 PC-D300 u7435 scott2000/schrum/ecndwqs 07-N0V-00 | |
5365-1Contextual Info: 6 7 DRAWING THIS MA D E IN THIRD DRAWING ANGLE 15 5 UNPUBLI5HED COPYRIGHT RELEASED 19 AMP BY FOR PUBLICATION INCORPORATED. ALL 4 77 PROJECTION 3 INTERNATIONAL RIGHTS DI ST L OC 19 47 AD RESERVED. REV I 5 I0N5 LTR Z O NE +0 -0.03 0.8 D HOUSING MATERIAU COOOR: NATURA U . |
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0U1B-0206-00 01NOVOO D5138 IPC-D300 amp40973 /home/amp40973/edmmod 03-APR-01 5365-1 | |
Contextual Info: 7 DRAWING THIS MA D E IN THIRD DRAWING ANGLE 15 6 4 5 3 PROJECTION UNPUBLI5HED COPYRIGHT RELEASED 19 BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST L OC 19 AD RESERVED. REV I 5 I0N5 47 Z O NE +0 . 03 LTR D E S C R I F T ION REVISE D |
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0U1B-0172-00 03N0V00 D5138 PC-D300 u7435 07-N0V-00 scott2000/schrum/ecndwqs | |
re 4 RM
Abstract: Z-PACK FB
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0U1B-0172-00 28MAR00 SPA05S 07-N0V-00 scott2000/schoum/ecndwqs re 4 RM Z-PACK FB | |
Contextual Info: 6 7 DRAWING MA D E THIS IN THIRD DRAWI NG ANGLE 15 UNPUBLI5HED COPYRIGHT 4 5 3 PROJECTION RELEASED 19 BY AMP FOR INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST L OC 19 PUBLICATION 47 AD RESERVED. REV I 5 I0N5 LTR Z O NE +0 . 03 DESCR I P T I O N J HOOSING |
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0U1B-0111-99 29MAR00 D5138 PC-D300 29-MAR-00 u7435 scott2000/ecOl | |
Contextual Info: 7 DRAWING THIS MA D E IN THIRD DRAWING ANGLE 5 6 77 PROJECTION 15 U N P U B L I 5 H E D COPYRIGHT RELEASED 19 BY AMP FOR PUBLICATION INCORPORATED. ALL 4 3 INTERNATIONAL RIGHTS DI ST L OC 19 AD RESERVED. REV I 5 I0N5 47 + 0 . 03 LTR Z O NE D E S C R I F T ION |
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0U1B-0111-99 /home/ampt3172/edmmod | |
Contextual Info: 7 DRAWING THIS MA D E IN THIRD DRAWING ANGLE 6 5 TO PROJECTION 15 U N P U B L I 5 H E D COPYRIGHT RELEASED 19 BY AMP FOR PUBLICATION INCORPORATED. ALL 4 7 3 INTERNATIONAL RIGHTS DI ST L OC 19 AD RESERVED. + 0 . 03 47 REV I 5 I0N5 Z O NE LTR D E S C R I F T ION |
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0U1B-0022-99 19AUG99 u7435 scott99/1 b-0022/work 19-AUG-99 | |
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MICROWAVE ASSOCIATES RF SPDT switch
Abstract: MIL-STD-1686 442F SP8T switch package ghz HMC189MS8 HMC222C12 HMC226 HMC241QS16 HMC252QS24 HMC236QS16G
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AMP STKContextual Info: Ï 7 TFTTS DRAW ] Í JG- 4~S—UNPUBI I S H F D VERIBAUL4£+4&-44Nveft 'c C O P Y R IG H T 2000 -BY AMP JA N , R E L E A S E D FOR P U B L I C A T I O N F R E I F U ER V E R O E F F E N T L I CHUNG A L L R IG H T S R ES ER V ED . |
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-44Nveft 27JUN96 eq009003 AMP STK | |
TNPWContextual Info: Com m ercial Thin Film Chip Resistors T T h in F il m M o d e l T N PW % * F eatures • Internationally standardized size • • Automatic placement compatibility ^ • Reflow solderable • Thin film resistance element f V # # * • Wraparound termination |
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100PPM/ 50PPM/ 25PPM/ TNPW-0805 TNPW | |
Contextual Info: P R E C I S I O N T H I F N L M T E C H N O L O G Y SMT CHIPS C om m ercial Thin Film Chip R e sisto rs T h in F ilm Model TNPW # % # F eatures • Internationally standardized size • Automatic placement compatibility • Reflow solderable • Thin film resistance element |
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TNPW-0603 100PPM/Â 50PPM/Â 25PPM/Â TNPW-0805 | |
RFID 5.8Ghz
Abstract: HMC189MS8 HMC264CB1 HMC265CB1 HMC266 HMC280MS8G HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch
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DC-40 HMC280MS8G HMC189MS8 RFID 5.8Ghz HMC264CB1 HMC265CB1 HMC266 HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch | |
w76l
Abstract: 9m50
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Coaxial RG
Abstract: 6825R
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Contextual Info: EDI8LM32257C-RP m 256Kx32 SRAM Ruggedized Plastic x ELECTRONIC DESIGNS INC ADVANCED 256Kx32 CMOS High Speed Static RAM Features The EDI8LM32257C is a high-speed 8-Megabit static RAM device with access times of 15 and 20ns over the Commer 256Kx32 bit CMOS Static |
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EDI8LM32257C-RP 256Kx32 EDI8LM32257C 57C20AM EDI8LM32257C25AM JEDECMO-47AE 32257C | |
IDT6P41322
Abstract: 6P41322
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IDT6P41322 IDT6P41322 6P41322 | |
Contextual Info: 4 O/P 1.5V PCIe Gen1-2-3 Clock Generator w/Zo=100ohms 9FGU0441 DATASHEET Description Features/Benefits The 9FGU0441 is a member of IDT's 1.5V Ultra-Low-Power PCIe clock family with integrated output terminations providing Zo=100Ω. The device has 4 output enables for |
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100ohms 9FGU0441 9FGU0441 100ohm 100MHz |