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Panduit Corp DNE6512B ENCLOSURE ACCESSORY NET VERSE
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DigiKey	DNE6512B	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panduit Corp DNE6512W ENCLOSURE ACCESSORY NET VERSE
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DigiKey	DNE6512W	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE651R479A-A RF MOSFET GAAS HJ-FET 3.5V 79A
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DigiKey	NE651R479A-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE6510179A-A RF MOSFET GAAS HJ-FET 3.5V 79A
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DigiKey	NE6510179A-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC NE651R479A-T1-A RF MOSFET HFET 3.5V 79A
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DigiKey	NE651R479A-T1-A	Bulk			38	1 - 10 - 100 $7.95 1000 $7.95 10000 $7.95	Buy Now

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NE651 Datasheets (36)

Part	Manufacturer	Description	Datasheet Type	PDF
NE6510179	NEC	1 W L-BAND POWER GaAs HJ-FET	Original	PDF
NE6510179A	California Eastern Laboratories	NECs 3W L&S-BAND MEDIUM POWER GaAs HJ-FET	Original	PDF
NE6510179A	NEC	1W, L/S-BAND MEDIUM POWER GaAs HJ-FET	Original	PDF
NE6510179A	NEC	Semiconductor Selection Guide	Original	PDF
NE6510179A	NEC	1 W L-BAND POWER GaAs HJ-FET	Original	PDF
NE6510179A	NEC	1W, L/S-BAND MEDIUM POWER GaAs HJ-FET	Scan	PDF
NE6510179A-A	NEC	TRANS JFET N-CH 8V 720MA BULK	Original	PDF
NE6510179A-EVPW19	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 1.9GHZ	Original	PDF
NE6510179A-EVPW24	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 2.4GHZ	Original	PDF
NE6510179A-EVPW26	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 2.6GHZ	Original	PDF
NE6510179A-EVPW35	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 3.5GHZ	Original	PDF
NE6510179A-T1	California Eastern Laboratories	NECs 3W L&S-BAND MEDIUM POWER GaAs HJ-FET	Original	PDF
NE6510179A-T1	NEC	1 W L-BAND POWER GaAs HJ-FET	Original	PDF
NE6510179A-T1	NEC	1 W L-Band Power GaAs HJ-FET	Original	PDF

NE6510179A-T1	NEC	1W, L/S-BAND MEDIUM POWER GaAs HJ-FET	Scan	PDF
NE6510179A-T1-A	California Eastern Laboratories	RF FETs, Discrete Semiconductor Products, HJ-FET GAAS 1.9GHZ 1W 79A	Original	PDF
NE6510179A-T1-AZ	NEC	FET Transistor: 1W L-BAND POWER GaAs HJ-FET: Tape And Reel	Original	PDF
NE6510379A	NEC	Semiconductor Selection Guide	Original	PDF
NE6510379A	NEC	FET Transistor, 3W L-BAND Power GaAs HJ-FET	Original	PDF
NE6510379A	NEC	3 W L-BAND POWER GaAs HJ-FET	Original	PDF

NE651 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1E-16 Abstract: No abstract text available Text: NONLINEAR MODEL NE6510179A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.75 nH LD 0.65 nH LDX 0.01 nH DRAIN RDBX 400 ohms GATE CDS PKG 0.1 pF CBSX 100 pF CGS PKG 0.1 pF RSX 0.05 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1	Original	PDF	NE6510179A 1e-16 10e-12 5e-12 20e-12 4e-12 24-Hour
max 16801 pspice Abstract: 40J100 Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	PDF	NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour max 16801 pspice 40J100
Untitled Abstract: No abstract text available Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz	Original	PDF	NE6510179A 24-Hour
6822 FET Abstract: No abstract text available Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	PDF	NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour 6822 FET
NE6510179A Abstract: NE6510179A-T1 Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power CW with high linear	Original	PDF	NE6510179A NE6510179A NE6510179A-T1
nec k 4145 Abstract: NE6510179A NE6510379A NE651R479A NE651R479A-T1 Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear	Original	PDF	NE651R479A NE651R479A NE6510179A NE6510379A. nec k 4145 NE6510379A NE651R479A-T1
NE6510179A Abstract: No abstract text available Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz	Original	PDF	NE6510179A 24-Hour
100A5R1CP150X Abstract: IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A ATC 1084 Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	PDF	NE651R479A IMT-2000, NE651R479A 100A5R1CP150X IMT-2000 NE651R479A-A NE651R479A-T1-A ATC 1084
NE6510179A Abstract: No abstract text available Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	PDF	NE6510179A IMT-2000, 24-Hour
MCR03J Abstract: IMT-2000 NE6510179A NE6510179A-A 100A4R7CP150X AF127 IC 13700 NE6510179AT1A Text: NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	PDF	NE6510179A IMT-2000, MCR03J IMT-2000 NE6510179A NE6510179A-A 100A4R7CP150X AF127 IC 13700 NE6510179AT1A
Untitled Abstract: No abstract text available Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear	Original	PDF	NE651R479A NE651R479A NE6510179A NE6510379A.
NE6510179A Abstract: No abstract text available Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz	Original	PDF	NE6510179A 24-Hour
NE6510179A Abstract: NE6510379A NE651R479A NE651R479A-T1 Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high	Original	PDF	NE651R479A NE651R479A NE6510179A NE6510379A. NE6510379A NE651R479A-T1
NE6510379A Abstract: NE6510379A-T1 0949 NEC TANTALUM Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear	Original	PDF	NE6510379A NE6510379A NE6510379A-T1 0949 NEC TANTALUM

NE6510379A Abstract: NE6510379A-T1 nec 1761 hjfet application Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 W of output power with high linear gain, high efficiency and	Original	PDF	NE6510379A NE6510379A NE6510379A-T1 nec 1761 hjfet application
NE6510179A Abstract: NE65 ms 16881 Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	PDF	NE6510179A IMT-2000, 24-Hour NE65 ms 16881
NE6510179A Abstract: NE650103M NE651R479A Text: NEC Discrete Power Devices www.cel.com GaAs Driver Devices Typical Specifications @ TC = 25°C Power & Gain Frequency Linear Range P1dB POUT PIN Gain GHz (dBm) (dBm) (dBm) (dB) Part Number NE651R479A 0.8 to 3.7 — NE6510179A 0.8 to 3.7 — NE650103M 0.8 to 2.7	Original	PDF	NE651R479A NE6510179A NE650103M NE6510179A NE650103M NE651R479A
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear	OCR Scan	PDF	NE6510379A NE6510379A
x 1535 ce Abstract: 0537 Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high	OCR Scan	PDF	NE651R479A NE6510179A NE6510379A. x 1535 ce 0537
NEC k 1760 Abstract: NE6510179A Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +31.5 dBm TYP @ V d s = 3.5 V, Id s q = 150 mA, f = 850 MHz, Pin = +20 dBm	OCR Scan	PDF	NE6510179A NE6510179A-T1 24-Hour NEC k 1760 NE6510179A
a 1232 nec Abstract: NE6510179A nec 1565 NEC TANTALUM Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1YV GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency	OCR Scan	PDF	NE6510179A NE6510179A a 1232 nec nec 1565 NEC TANTALUM
NE6510179A Abstract: No abstract text available Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS NE6510179A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE HIGH OUTPUT POWER: +31.5 dBm TYP @ Vds = 3.5 V, Idsq = 150 mA, 1 = 850 MHz, Pin = +20 dBm +32.0 dBm TYP @ V ds = 3.2 V, Idsq = 200 mA,	OCR Scan	PDF	NE6510179A NE6510179A-T1 NE6510179A
NE6510179A Abstract: hjfet Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER:+31.5 dBm TYP @ Vds = 3.5 V, Idsq = 150 mA, f = 850 MHz, Pin = +20 dBm	OCR Scan	PDF	NE6510179A NE6510179A hjfet
Untitled Abstract: No abstract text available Text: DATA SHEET_ N-CHANNEL GaAs HJ-FET N E 6 5 1 1 7 9 A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency	OCR Scan	PDF	NE6510179A NE6510179A

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NE651 Price and Stock

Panduit Corp DNE6512B

Panduit Corp DNE6512W

California Eastern Laboratories (CEL) NE651R479A-A

California Eastern Laboratories (CEL) NE6510179A-A

Rochester Electronics LLC NE651R479A-T1-A

NE651 Datasheets (36)

NE651 Datasheets Context Search

1E-16

max 16801 pspice

Untitled

6822 FET

NE6510179A

nec k 4145

NE6510179A

100A5R1CP150X

NE6510179A

MCR03J

Untitled

NE6510179A

NE6510179A

NE6510379A

NE6510379A

NE6510179A

NE6510179A

Untitled

x 1535 ce

NEC k 1760

a 1232 nec

NE6510179A

NE6510179A

Untitled