NE9008 Search Results

Contextual Info: NE900873-13 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-9 I(D) Max. (A)2.4 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.2 I(DSS) Max. (A)2.4 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.400mÂ

Contextual Info: NE900873-15 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-9 I(D) Max. (A)2.4 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.2 I(DSS) Max. (A)2.4 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.400mÂ

Contextual Info: NE900873-12 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-9 I(D) Max. (A)2.4 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.2 I(DSS) Max. (A)2.4 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.400mÂ

Contextual Info: NE900873-14 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-9 I(D) Max. (A)2.4 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.2 I(DSS) Max. (A)2.4 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.400mÂ

Contextual Info: NE900873-11 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-9 I(D) Max. (A)2.4 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.2 I(DSS) Max. (A)2.4 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.400mÂ

NE800296

Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in

NE800296

Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in