NEC 022 51 Search Results

AWM STYLE 2598 60c 300v

Abstract: awm 2587 CL3R AWM 1007 AWG 22 65x28 plenum B115 1313a AWM style 1007 5T00UP
Contextual Info: B R O A D C A S T C A B L E S 19.31 Speaker Wire and Cable Overview 19 • Brilliance Broadcast B R I L L I A N C E® Electrolytic Tough Pitch ETP High-conductivity Copper Speaker Cables Speaker Cable Selection Guide 4Ω Speaker Speaker cables are used to connect receivers or power

7412A

Abstract: 7411a 7405A 7401AS 7438A 7403A 7427A style 2587 rg 58 AWM STYLE 1354 7418a
Contextual Info: INDUSTRIAL AUTOMATION & PROCESS CONTROL CABLES 18.31 Belden Infinity Flexible Automation Cable Overview and Application Guide Belden Infinity Means More Performance And Longer Life Belden Infinity is a complete line of control, data, video, and power cables specifically

2745T

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS //PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The //PC2745TB and //PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile

MC428000A36FJ70

Abstract: MC428000A36FJ60 MC-428000A36FJ-70
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT MC-428000A32, 428000A36 SERIES 8 M-WORD BY 32-BIT, 8 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16 M DRAM: /JPD4217400 are assembled.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS «PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The /¿PC2745TB and /¿PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

TRANSISTOR BO 345

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

awm STYLE 2919 COMPUTER CABLE 30V

Abstract: nec 8772 P awm 2464 vw-1 80c 300v awm 2919 vw-1 awm STYLE 2919 COMPUTER CABLE 30V vw-1 awg 2464 28 awg 80 c 300v vw-1 AWM 2919 VW-1 30V Belden AWM 2464 80c 300v nec 8772 AWM VW-1 30V
Contextual Info: 4.1 Multi-Conductor Cables Table of Contents 4 Multi-Conductor Cables Page No. Introduction 4.2 Selection Guide: Shielded Computer Cables for RS-232 Applications 4.2 Unshielded 4.3–4.9 Audio, Control and Instrumentation Cables 4.3 22 AWG Non-Plenum & Plenum

transistor nec 8772

Abstract: awm STYLE 2919 COMPUTER CABLE 30V awm 2919 vw-1 nec 8772 transistor nec 8772 P nec 8772 awm 2919 vw-1 specifications Belden AWM 2464 80c 300v AWM STYLE 2919 low voltage COMPUTER CABLE Belden AWM 2919
Contextual Info: Multi-Conductor Cables Table of Contents 4 Multi-Conductor Cables Page No. Introduction 4.2 Selection Guide: Shielded Computer Cables for RS-232 Applications 4.2 Unshielded 4.3–4.9 Audio, Control and Instrumentation Cables 4.3 22 AWG Non-Plenum & Plenum

L0565

Abstract: L0988 2SJ178 IR TK 19 544 ScansUX882
Contextual Info: NEC i i f / V 7 s— ? • S/— h mos 7 T MOS Field E ffe c t T r a n s is to r 2 S J1 7 8 MOS F E T ¡6 3 LJ$X<1V 51 2SJ178 Ü, P f t * / U f i MOS F E T T", 5 V b Ü i f ê B b 4* X ^ -y f- > y " • f " > < i - y , y i / / ^ K, # AX IC T - ’t 'o w F 7 > f7 i:ilt* to

MC-428000F32

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-428000F32 8 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-428000F32 is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16 M DRAM: /¿PD4217405 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.

transistor kp 303

Abstract: VP15-00-3 transistor 14026
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

6323 GA

Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE

Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT MC-428000A32, 428000A36 SERIES 8 M-WORD BY 32-BIT, 8 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE D escription The MC-428000A32 series is a 8,388,608 w ords by 32 bits dynam ic RAM m odule on w hich 16 pieces of 16 M DRAM: /iPD4217400 are assembled.

mPC2746

Abstract: mPC2746TB MPC2746T C10535E VP15-00-3
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS mPC2745TB, mPC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The mPC2745TB and mPC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ES C R IP TIO N The /¿PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

transistor w bh 212

Abstract: SK FN 521 sol 4011 be 2SD1779 TN-6014 TN60 hia 51
Contextual Info: •7 s— "S7 • S ' — h - NEC ^ Silicon T ran sisto r 2SD1779 & m M M o « h FE -0 L * ' i f& V CE, „ t) f t w ^ - f i ^ mm) t - f - ' l $1 t L T f t i S T 'i - o hKE= 8 0 0 ~ 3 2 0 0 (a t V CE = 5 .0 V, Ic = 1 .0 A ) V CE(sat) = o / J '^ T * f F

awm STYLE 2990

Abstract: AWM 2990 awm 2919 vw-1 Belden AWM 2919 awm 2990 vw-1 Belden AWM 2448 awm 2919 AWM VW-1 30V 2990 awm STYLE 2919 AWM STYLE 2448
Contextual Info: B R O A D C A S T C A B L E S 19.49 Precision Video Cable for Analog and Digital Overview 19 • Brilliance Broadcast B R I L L I A N C E® Analog Video Parallel Digital Video D1, D2 & D3 Belden® precision video cables are used in critical analog and digital

nec 16312

Abstract: c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN PC1677 UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011
Contextual Info: Application Note USAGE AND APPLICATION OF SILICON MEDIUMPOWER HIGH-FREQUENCY AMPLIFIER MMIC µPC1677 to 1679 µPC2708 to 2710 µPC2762/2763 µPC2771/2776 Document No. P12152EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) 1997, 1999 Printed in Japan

2SK997

Abstract: 1000HW Sn 4011 2SK9
Contextual Info: ~r— S 7 • 5/— K J u n c t io n F ie ld E ffe c t T r a n s is t o r 2SK997 ECM ift m m o r - h •v isb, X i/ ^ - x m z f ' í * - K, T O : m m M m K iftM L X ^ h tz => 1-1/7 K m 9 t c J l i i t :'1 _ o 0.5 0.42 z 2 S fe *£ *3 Ëtè (T a = 25 °C)

AC05DGM

Abstract: 7544a AC05FGM AC05 nec 1SS50 ac05d AC05 SC-7544A H092
Contextual Info: NEC - t K U X 2 Thyristors AC05DGM,AC05FGM ô A Î-iU K T R IA C AC05 r J y ^ KWÆ FTRIACT", m < 0 i K L ¥ - ? * 7 * f f . î ± 4 0 0 V , 600 V X ' - f o & @h 10.5 MAX. tt OTO-220AB ' r - Z C D f z t b ' l ' i t m t T J b > , £ tzWM ') — FA* I E i c

SiS 6801

Abstract: 1SS305
Contextual Info: T — $ • y — N_ 7 .4 " ; 3 - > ? ÿ ' j 3 > Silicon Switching Diode 1SS305 i 7 J ls 7 t ° - K Silicon Epitaxial Diode High Speed Switching 4# • mm i t r IJ y K I C ffl t L T ^ i i T ’ -To -.m t) o § i Ä ^ $ l > o