NEC 28PIN DIP Search Results

Contextual Info: NEC ¿{PD77C25, 77P25 1. PIN FUNCTIONS 1.1 Pin Functions for Normal Operation Pin Pin N um ber Designation I/O Function 28-pin Plastic DIP, 32-pin Plastic SO P 44-pin Plastic QFJ 28-pin Ceramic DIP 28 V dd GND 14 V p p Note 1 31 1 32 44 15 21 16 22 2 2 —

K6X0808C1D-BF55

Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Contextual Info: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI

uPD43256

Abstract: PD43256BCZ-xxLL PD43256B
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The μPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And A and B versions are wide voltage operations.

UPD43256BGU-70LL-A

Abstract: upd43256bgw-70ll-9jl-a uPD43256BCZ-70LL UPD43256BGU-70L uPD43256BGU-70LL
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And A and B versions are wide voltage operations.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The μPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And A and B versions are wide voltage operations.

D43256B

Abstract: D43256 uPD43256 uPD43256BCZ-70LL PD43256B uPD43256BGU-xxL UPD43256BCZ uPD43256B-A10
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And A and B versions are wide voltage operations.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD43257B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The μPD43257B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And the μPD43257B has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD43257B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43257B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And the µPD43257B has two chip enable pins (/CE1, CE2) to extend the capacity.

UPD77C25GW

Contextual Info: NEC ¿{PD77C25, 77P25 ★ O RDERING INFO RM ATIO N Part Number Package /xPD77C25C-xxx 28-pin plastic DIP 600 mil /jPD77C25GW-xxx 32-pin plastic SOP (525 mil) /¿ P D 7 7 C 2 5 L -X X X 4-4—pin plastic QFJ (650 x 650 mil) /¿PD77P25C 28-pin plastic DIP (600 mil)

S24C MARK

Abstract: tsop 3602 9020 8-pin SOP SIP 400B nec 1251 P100G thomson 462 t P5VP-340B3-2 J 80222 P28D-100-600A1-1
Contextual Info: Packages Plastic DIP Dual In-line Package Units in mm 8-pin plastic DIP (300mil) 8 5 1 4 14-pin plastic DIP with TAB (300mil) 14 8 1 7 20.32 MAX. 7.62 10.16 MAX. 24.60 MAX. 7.62 4.31 MAX. 6.4 0.9 MIN. 6.4 5.08 MAX. 5.08 MAX. 4.31 MAX. 2.54 0.51 MIN. 2.54

d43257

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD43257B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43257B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And the µPD43257B has two chip enable pins (/CE1, CE2) to extend the capacity.

D43256BGU

Abstract: d43256bc nec 28 pin 43256B 43256BG 43256BGU
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ //PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The /iPD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.

D7503AGF

Abstract: D70108C D70320L d77c20ac D78C10 D70116C D75306GF D77C25C D70208L D70216
Contextual Info: NEC ELECTRONICS INC. MAY 1999 TRQ-99-05-323 QUARTERLY MICROPROCESSOR/MICROCOMPUTER RELIABILITY REPORT This report contains reliability data on microprocessor and microcomputer devices fabricated at NEC Roseville and assembled at NEC Roseville or NEC Singapore.

Contextual Info: SEC fiPD43256B 32,768 x 8-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The ^fPD43256B is a 32,768-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to

uPD43256

Abstract: d43256 UPD43256BCZ-85LL D43256B PD43256B uPD43256BGU-xxL upd43256bgu-70l UPD43256BCZ-70LL uPD43256B-A10
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And A and B versions are wide voltage operations.

NEC 28PIN DIP

Abstract: MD400 ANTISTATIC MD400-03A
Contextual Info: TUBE CONTAINER Unit : mm 8.0 13.5 12.5 7.0 17.9 MD400-03A Length : 500 ± 2.0 Thickness : 0.5+0.2 −0.1 Tolerance : ± 0.4 Material : Plastic with antistatic finish Applied Package Quantity (pcs) 20-pin plastic DIP MAX. 17 22-pin plastic DIP/ceramic DIP

Contextual Info: NEC pPD4368 8,192 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The /JPD4368 is a high-speed 8,192-word by 8-bit static RAM designed with CMOS peripheral circuits and N-channel memory cells with polysilicon resistors. Two chip enable pins are provided for battery backup appli­

Contextual Info: jiPD4369 8,192 X 9-Bit Static CMOS RAM W JL J W NEC Electronics Inc. Description Pin Configuration The /JPD4369 is a high-speed 8,192-word by 9-bit static RAM fabricated with CMOS peripheral circuits and N-channel memory cells with poly silicon resistors. Two

NEC 20PIN DIP

Abstract: NEC 28PIN DIP MD400 NEC 24PIN DIP SSD-A-H6525-1 cerdip MD400-05A
Contextual Info: TUBE CONTAINER UNIT : mm 7.5 13.5 12.5 7.0 17.9 MD400-05A length : 495±2.0 +0.2 thickness : 0.5−0.1 tolerance : ±0.4 material : plastic with antistatic finish Applied Package Quantity (pcs) 14-pin • Plastic DIP MAX. 24 20-pin · Plastic DIP MAX. 17

812 tube

Abstract: dip 135 dip 28 dimension MD400-03A
Contextual Info: TUBE PACKING 1. CONTAINER Pin stopper tion irec d pin 1 2. INNER BOX L H W Label LABEL PRODUCT NAME, QUANTITY, LOT NUMBER, CLASS CONTAINER INNER BOX Quantity pcs /tube Dimension (mm) (WxH×L) Quantity (pcs) /box 20-pin plastic DIP MAX. 17 163×135×532

nec 40-pin plastic dip

Abstract: 40 PIN CERDIP cerdip 28 pin ceramic dip nec 40 pin dip nec 40 pin plastic dip
Contextual Info: TUBE CONTAINER UNIT : mm 8.6 15.5 18.3 11.2 22.4 SC-600-1P Length : 495±2.0 Thickness : 0.7+0.3 −0.2 Tolerance : ±0.4 Material : Plastic With Antistatic Finish Applied Package Quantity(pcs) 24-pin Plastic DIP MAX. 14 24-pin Ceramic DIP (Cerdip) MAX. 15

43256BCZ

Abstract: MPD43256BGU-85L NEC 28PIN DIP 7L Marking
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ /¿PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The /1PD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CM OS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are w ide voltage operations.

Contextual Info: DATA SHEET ^ I E C _¿¿PD43256B / M OS IN T E G R A T E D C IR C U IT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The itPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.

UPD4368

Contextual Info: NEC PPD4368 8,192 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The /JPD4368 is a high-speed 8,192-word by 8-bit static RAM designed with CMOS peripheral circuits and N-channel memory cells with polysilicon resistors. Two chip enable pins are provided for battery backup appli­