NEC 444 RAM Search Results

Contextual Info: PRELIMINARY DATA SHEET NEC |jPD461318/36LSl Bi-CMos S y n c h r o n o u s S t a t i c Ram MAR. 1995 Description The nPD461318/36LS1 is a 65,536-word by 18-blt / 32,768-word by 36-blt synchronous static RAM fabricated with advanced BI-CMOS technology using

nec 444 ram

Abstract: PD2114L PD444C MPD444C 2SO 765 PD42S18160 uPD444-3 pd2114 MPD444 nec chic
Contextual Info: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM D ESCR IPTIO N The /LfPD444 is a high-speed, low power silicon gate CMOS 4096 bit static RAM orga­ nized 1024 words by 4 bits. It uses DC stable static circuitry throughout and there­

UPD444C

Abstract: MPD444C PD444C MPD444 UPD444-1 upd444 nec nec 444 ram nec ram upd444c PD444 ram 2114L
Contextual Info: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION The /LfPD444 is a high-speed, low power silicon gate CMOS 4096 b it static RAM orga­ nized 1024 words by 4 bits. It uses DC stable static circ u itry throug hou t and there­

UPD444

Abstract: UPD444-1 MPD444
Contextual Info: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION T h e /LfPD444 is a high-speed, lo w p o w e r s ilic o n gate C M OS 4 0 9 6 b it s ta tic R A M o rg a ­ n ize d 1 02 4 w o rd s b y 4 b its . I t uses DC stable s ta tic c ir c u itr y th ro u g h o u t and th e re ­

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

eeprom s130

Abstract: eeprom s190 KVP49 sn 76545 s193 V55-V62 s331 eeprom VRP11 s489 kvp 3b
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

eeprom s190

Abstract: eeprom s130 S507 s331 eeprom Datasheet of 7492 IC 66285 929 rev oh s26 KVP14 KVP18 444-573
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD161608 262,144 色カラーTFT 液晶対応 176-RGB x 220 ドット 1 チップ・ドライバ μPD161608 は，TFT 液晶対応の表示コントローラ・ドライバ IC です。また，176-RGB x 220 ドットにより 262,144

4464 ram

Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Contextual Info: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT­ AC H I ID T M ITS U ­ BISHI M OT­ O R O LA N AT­ IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH­ IB A N M O S,

pd424400

Abstract: d424400
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ , ü P D 4 2 4 4 0 0 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /¿PD424400 is a 1,048,576 words by 4 bits CMOS dynamic RAM. The fast page mode capability realizes high speed access and low power consumption.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516DA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description T h e M C -4 5 1 6 D A 7 2 4 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w hich 18 pie ce s of

itr 8102

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jjPD42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /iPD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

lvds to mipi

Abstract: VS6650 mipi camera link bt.656 to MIPI STV0976 Circuit STV0976 RGB-444 MIPI Specification smia camera MIPI display megapixel
Contextual Info: MOB-976/650-E01 Evaluation Kit for Megapixel Processor and SMIA Camera Module DATA BRIEF FEATURES • Supports the STV0976 co-processor and VS6650 1.0 Megapixel 1152H x 864V camera module ■ Up to 30 frames per second (fps) operation at SVGA or 15fps at 1.0 Megapixel

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, D escription The ¿¿PD42S16165L, 4216165L are 1,048,576 words by 16 bits C M O S dynam ic RA M s with optional EDO.

I1244

Abstract: D42S18165 LH 446
Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT /¿P D 4 2 S1 8 1 6 5L, 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page

CMOS-10

Abstract: f-002
Contextual Info: CMOS-10 2.5-Volt, 0.25-M icron drawn CMOS G ate Array NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Tape BGA and Chip Size Package Description In CMOS-IO, NEC combines high-performance CMOS technology with an advanced 2.5-volt block library and an

hilti te 24

Abstract: hilti te 17 GO 440 104 esm 433 rac
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 42S18165L , 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The .¿/PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EOO

TPS 436 IRA

Abstract: IC-3218B
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT fiPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S16160Lr 4216160L, 42S18160L, 4218160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.

RAC RAMBUS

Abstract: ha 1452 EA-C10
Contextual Info: IV IF C “ E A -C 10 2 .5 -V o lt, 0 .2 5 -M ic ro n d ra w n C M O S E m b e d d e d A rra y NEC Electronics Inc. Preliminary March 1997 Figure 1. Embedded Array Core Integration Description The high-speed 0.25|nm drawn (0.18 jxm L-effective) EA-C10 embedded array family offers both support for

D78 NEC

Abstract: 986M
Contextual Info: CB-C10 2.5-Volt, 0.25-M icron drawn CMOS Cell-Based ASIC NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 n.m drawn (0.18 (j.mL-effective)CB-C10family incorporates ultra-high-performance cores with deep sub­

ic 321

Contextual Info: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ / „PD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAM IC RAM 1M-W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT / / P D 42 S 18165 L , 4218165 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The jiP D 4 2S 18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page

NZ70008H

Abstract: STEPS 30175 STR 6755 k2736 NZ70 NEC V30MX V30MX nec 2508 nec 772 K398
Contextual Info: DATA SHEET PRODUCT LETTER CB-C9VX/VM 0.35-Micron CMOS Cell-Based ASICs Description Figure 1: System-Level-Integration The CB-C9VX/VM family offers ultra-high performance, deep submicron cell-based ASICs for high-end applications requiring high speeds, high integration density and low power

uPD654

Abstract: L302 OPENCAD CMOS Block library
Contextual Info: EA-C9 3.3-Volt, 0.35-Micron drawn CMOS Embedded Array NEC Electronics Inc. Preliminary March 1997 Description Figure 1. Embedded Array Core Integration NEC’s high-performance 0.35 µm drawn (0.27 µm L-effective) EA-C9 embedded array family offers both

Contextual Info: NEC 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER UPC1677B UPC1677C OUTLINE DIMENSIONS FEATURES • H IG H POW ER O UTPUT: + 19.5 dBm Units in mm OUTLINE B08 • EXCELLENT FREQ UENC Y RESPONSE: 1.27±0.1 1.27+0,1 1.7GHz TYP at 3 dB Down (LEADS 2,4,6.8) 0.6