NEC K 1995 TRANSISTOR Search Results

PA101B

Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Contextual Info: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

rgb analog sync on green to rgb analog separate sync

Abstract: truth table of 4017 cb-c7
Contextual Info: |k NEC Electronics Inc. AAD38D5A 5 V, 135-M H z Em bedded M egam acro T rip le 8-B it V ideo D/A C onverter Advance Information Apr» 1995 Description The AAD38D5A embedded megamacro is a triple 8/6-bit digital/analog converter for use in CB-C7 cell-based

2SK1995

Abstract: tea 2453 MEI-1202 TEA-1035 transistor 2sk1995
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1995 is N-channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

tea 2453

Abstract: transistor 2sk1995 2SK1995 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

K2481

Abstract: 2481 diode sy 710 diode
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2481 is N -C hannel MOS Field E ffect T ra n s is to r de­ P A C K A G E D IM E N S IO N S in m illim e te rs sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .

d1072

Abstract: 2SK2541 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWINGS in millimeter The 2SK2541 is a switching device which can be driven directly by a 1.5 V power source. The M O S FET has excellent switching characteristics and is suitable

2SK2541

Abstract: MEI-1202 MF-1134 NEC reliability 1995
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

k2341

Abstract: fet N-Channel transistor 250V DS NEC k 1995 transistor TC-8070
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The2SK2341 is N-channel Power MOS Field Effect Transis­ in millimeters to r designed for high voltage sw itching applications.

Contextual Info: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,

nec b 536 transistor

Abstract: NEC B 536
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in m illim e te rs 2.1

TC-2514

Abstract: K2141 tC2514 I-1207
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2141 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The2SK 2141 is N -c h a n n e l Pow er M O S R e id Effect T ra n s is ­ to r d e sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .

TC-7606

Abstract: 2SK1283
Contextual Info: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to

K2140

Abstract: 2sk2140 TC-2513
Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR 2SK2140, 2SK2140-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2140,2SK2140-Z is N-channel Power MOS Field Effect PACKAGE DIMENSIONS in millimeters Transistor designed for high voltage switching applications.

2SK2513-Z

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2513, 2SK2513-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2S K 2513. 2 S K 2513 -Z is N -C h a n n e l M O S F ie ld E ffe c t T ra n ­ PACKAGE DIMENSIONS in m illim e te r s s is to r d e s ig n e d fo r h ig h c u r re n t s w itc h in g a p p lic a tio n s ,

4 npn transistor ic 14pin

Abstract: PA1032 8 npn transistor ic 14pin
Contextual Info: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIM ENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: ¿fPA103 B Two of these use a common em itter pin and can be used as differential am plifiers

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2 S K 2 5 1 2 is N -C h a n n e l M O S F ield E ffe ct T ra n s is to r d e sig n e d fo r high c u rre n t sw itch in g a p p lica tio n s.

2SK929

Abstract: PS7K 2 fy
Contextual Info: M O S Field Effect Pow er Transistor 2SK929 MOS F E T Itffl 2SK929 l ì , T N MOS F E T 6 < , t •Vf- > r m , X ' i y f y tS > , K W m T O : mm) ¡ S l t l 'i S - X 'i 10.5 M A X . DC-D C 3 > /< - ? 4.7 M A X . 3 .0 M A X . # i t ° V d ss = 500 V, I dcdc) =

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2499, 2SK2499-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2499 is N-Channel MOS Field Effect T ransistor de­ PACKAGE DIMENSIONS in m illim eters signed fo r high cu rren t sw itchin g applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect T ransistor designed fo r high vo ltag e sw itching applications. PACKAGE DIMENSIONS

k2511

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2511 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2511 is N-Channel MOS Field Effect T ra n s is to r designed PA C K A G E D IM E N S IO N S in m illim e te r fo r hig h c u rre n t s w itc h in g applications,

Contextual Info: DATA SHEET NEC MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES P A C K A G E D IM E N S IO N S Suitable for use as R F am plifier in U H F T V tuner. in millimeters

FST 460 transistor

Abstract: DIODE 3LU TC-7600 Bt460 PS7K Transistor FST 460 IEF620 2SK1288
Contextual Info: ^ — S> • S ' — h NEC MOS — h= 7 > i> ^ M O S Field Effect Pow er Transistor 2SK1288 y<r7— M O S FET m m x i f f l 2 S K 1 2 8 8 i , mm M O S FET T", 5 v ic <r>frtsizu X -i -yf >?"T"' s'-i X t ’to fS^t >ffiÎÆT”, X ^ 7 f > ?, v u # i t /-f.iir &

TC-6300

Abstract: 2SK873 miw dc-dc tc6300 Voscm-20
Contextual Info: M O S Field Effect Pow er Transistor 2SK873 N f t ^ ^ - M O S FET xmm 2SK873 Ü , •c * > K < , x ^ 7 f > n i i i ; - M OS F E T t i T is d , ¡a s Jf x W & E I T O ! mm -i ■y-f > r-.iiri?;, D C -D C n > ✓ * -? t’ i i i S T 't o & f t °V dss