NEC LI ION Search Results

PA2721GR

Abstract: PA2721GR-E2-A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2721GR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2721GR is N-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.

Contextual Info: DATA SHEET_ NEC BiCMOS INTEGRATED CIRCUIT uPC1933 DC-DC CONVERTER CONTROL IC DESCRIPTION The ^¡PC1933 is an IC that controls a low-voltage Input DC-DC converter. This IC Is suitable for an operation with 3-V, 3.3-V Input or a lithium ion secondary battery Input, because the minimum operating supply voltage Is 2.5 V.

nec li ion

Abstract: FET 8PIN equivalent of mosfet in computer mother board Pch MOS FET uPA1714 PA1700 PA1700A PA1702 PA1703 PA1712
Contextual Info: LINEUP LINEUP OF 8-PIN SOP POWER MOSFET Toshihiko Ooishi DMOS Planer structure Source UMOS (U-Groove) structure Gate Source n+ Rch Gate n+ RJFET lower P Rch RJFET REPI n- REPI Rbulk Rbulk n+ Drain nn+ Drain Fig. 1 Comparison of Structure of Power MOSFET

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2353 DUAL N-CHANNEL MOSFET FOR SWITCHING OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2353 is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

PA1754

Abstract: PA1754G
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1754 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for Li-ion battery applications 8 5 1 ; Source 1 2 ; Gate 1

PA1715

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1715 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.

PA1715

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1715 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.

FTG 1087 S

Abstract: aot 127 D17108 D1710S 17p107 ZC07 UPD 552 C sje 607 TK 9107 ltg 551
Contextual Info: M O S jfc ît [lE § M O S Integ rated C ircu it / ¿ 4 ti-y h ° ->> ï'Jls?- 7 7"* v - f i ' P P D 1 7 1 I 'D - 7 A i t f c 1 7 K 7 “ * r ? f - ^ è Î R f f l L ’0 ' £ f c ft, 5 y ^ ^ ’S T i b T ' t ' o 1 '^ T i 0 ^ r ^ î i l 6 t '- y h 1 £ t L T v> £ 1 " 0

BUX 127 VDO

Abstract: 7ROM LM082 ABB BOD 1-17 r 7136a sga 0552 KRY 112 89 1-01 UH1 GW 9n jln4
Contextual Info: M O S In te g ra te d C ircuit PD17136A A1 /iPD17136A(A1) li, 8 t ' 7 hA/D3>A'-i> SS, , 2-f v f f i g ( 3 S1-f 7-Jl,) , AC-te'n-?n*fêtH 0 • U-b7 h !S , v U ^ JI- • < > 5 7 x - ^ ê r t i ® U T i , '5 4 t '7 h • •>>'7;U5i 7 y * 7 < ^ P 3 > h P - 7 T t,

cd 6283 cs

Abstract: cd 6283 ic ic cd 6283 cd 6283 2SJ134 d 6283 ic IC tl 082 cn TEA-509 IC cd 6283 cs
Contextual Info: MOS M O S Field Effect P o w e r Transistor p 2 S J1 3 4 i , P * -v MOS <? \\\ h (•- J : ó x * > t i t t / i ; <, w / ^ f « k, — MOS F E T x ï 4 / ^ v f-> 7 î v VET X , 5 V ^1),'^; I C > i i x t f , t+s• o M O CO * - ? . t v % 10.6 MAX. 10.0 , 0 3.6±0.2

mec crystal oscillator 1 MHz 4 pins

Abstract: MS122125
Contextual Info: NEC * 9. /•¿PP7SP03Q8Y ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Ta = 25°C Parameter Supply voltage Input voltage Symbol Test Conditions Voo Ratings Unit -0 .3 to +7.0 V V pp -0 .3 to +13.5 V AV ref —0.3 to V do + 0.3 V AVss -0 .3 to +0.3

NEC Ga FET marking Rf

Abstract: nec gaas fet marking
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce­ ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.

LT 5251

Abstract: L30C uPD17202A AS1720 DC-7AP IC-8110 plj1
Contextual Info: M O S Î& S I0 S& M O S In te g ra ted C ircuit ï /V T Z t ¿ ¿ P D 1 7 P 2 2 A L C D z iv h a — h 'Z iv b n — 7 4 AìPD17P202A l i , ^ P D 1 7 2 0 2 A C O [^ ^ X ^ R O M £ 7 > • ^ ^ A PROM t i ¿¿PD17P202A t i , jl- LT W z U r o ^7 * |^ n ar t t ' t 0

c4082

Abstract: PC4082G PC4082
Contextual Info: DA T A S H E E T IM E C BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC4082 J-FET INPUT DUAL OPERATIONAL AMPLIFIER DESCRIPTION FEATURES The ¿/PC4Û82 is a dual o pe ra tio n a l a m p lifie r • Very lo w in p u t bias and offse t currents in co rp o ra tin g w et! m atched ion im p la n t P-channel

DC7P

Abstract: JLH 94 V0 PD27C256 MLT 22 452 NEC FVD 817 CN PD78P218A 9w cfl circuit DM 0265 R nec k 813
Contextual Info: M O S £MXIH% M O S In te g ra te d C irc u it //P D 7 8 P 2 1 8 A /¿PD78P218A J, 78K/II •> U -X '(7 S nnnT , ¿¿PD78218A CDv * ? ROM & 9 > • i : I ? M / : 8 t '7 « > , v X x A M f~ • ->> :50U ^ -y 7° • f g B t O T r f f f i f f l f c <£ A PROM i

Contextual Info: NEC ¿¿PP75P4308 m b 4 2 75 25 QOfiôSTH 123 • MS-DOS is a trademark of Microsoft Corporation. IBM DOS, PC/AT, and PC DOS are trademarks of International Business Machines Corporation. The export of this product from Japan is regulated by the Japanese government. To export this product may be prohibited

TFK 526

Abstract: msc 5511 d17010gf sol 4011 be pd1701 ptv 1444 IJ40 AF53 ti77
Contextual Info: 7 s— % • V — h S / Ë M o s ü s s m is M O S In te g ra te d C ircuit ft P ^ IW H F M , D 1 MWg PLLÜ >$§& v > ir y ° 'J v > ^ V l/5 1 'y ~ f • v < ^ p 7 1 G F - 1 1 < if, IF *^> £l*3lÌ z i > H P D17010G F-011 té, EWflOTFM, MW, L W A ''S ff P Ïffë & P L L Ü të S fcv

d7227g

Abstract: CJ910 LCD 8x40 UPD7227 PD7227 D7227G-11 d7227 pd7225 MPD7227 LCD DOTS
Contextual Info: IV O S " < 1 E }iPD7225 LCD 7/14 Segment Controller/Driver C D E S C R IP T IO N T h e ^ P D 7 2 2 5 is a p r o g r a m m a b l e pe rip h e ra l device c o n t a i n i n g all th e c i r c u i t r y i neces sary fo r in t e r f a c in g a m ic r o p r o c e s s o r to a w i d e v a r i e t y o f a l p h a - n u m e r i c L i q u i d

LEM LC 500-S

Abstract: KL SN 102 94v SCR M21C STM CL-70 scr ky 202 TFK S 417 T LX 2272 fcf - 4 94v - 0 _ 1 2ty nte tfk 914
Contextual Info: M O S S * l5 ]ï& M O S Integrated Circuit PD17010 7 " '- f Jls • i F 4^ 7 — — >*f • h • '> > ? V =3- 7 7 ° * 7 ^ □ □ > h □ - ^ //P D 1 7 0 1 0 f i , x - i v ? J U ••J-D - — - > ? ' • 4 t'-y i- • ■> > 'y 7° C M O S v - i ÿ - p z i > h □ — -ÿT 'T o

sdc 603

Abstract: h s 772 je p 2SK2479 MP-25 D1027
Contextual Info: h 7 > y '7 $ M O S Field Effect T ran s is to r 2SK2479 M OS FET x - r v u ^ x / m s 2SK24791ÎN5L + ^ J H É S /\or7 - MOS FETI?, * -f -y 51 > # tlT is U -f -y 51 > ÎS O f f - h B E E ± 3 0 V ÎS IŒ T 'fo O Î S A ^ S m T '- T o C is s = 4 8 5 p F ii*

F2HD

Abstract: IC-8303 54IH KT 203A IBM 7HY upd17203 PD17P203A C349 PD17204
Contextual Info: i. i i IK N E C ^ ^ M O S S Î m [US& M O S In teg rated C ircu it //PD 1 7 P 2 0 3 A , 1 7 P 2 0 4 3 7 ^ ra m , "71*1/^ «; ^e — h - = i > h n - 7 f f l 4 ti'y h n —^ ? ROM £ V > • 9 4 A PRO M r l l } | .« P D 1 7 P 2 0 3 A i //P D 1 7 2 0 3 A ¿0, /¿ P D 1 7 P 2 0 4 ! i .« P D 1 7 2 0 4

c3478

Abstract: 2Sc3478 y 3f
Contextual Info: y ' > y = i > Silicon T ra n sisto rs 2 S C 3 4 7 8 ,3 4 7 8 A # -Ç -fô o ü f f i t t o V ceo 180 V /2 0 0 V (2 S C 3 4 7 8 /2 S C 3 4 7 8 A : : mm) 5 . 2 MAX. o hFE « » i M W - i i t i T ^ t t o O / J ^ - c - ^ Î l ^ ^ Ë ^ o : 0 .7 5 W P t o 2 S A 1 3 7 6 /2 S A 1 3 7 6 A t ? > 7°<) 9 y ?

CHMC IC

Abstract: chmc chmc sh D6002 wwvb CHMC receiver ST CHN 230
Contextual Info: Silicore RADIO CONTROLLED RECEIVER IC DESCRIPTI ON D6002 O ut li ne D ra wi ng Th e D6 00 2 i s a bi po la r in teg r ate d str aig h t th r ou g h r ec eiv er c ir cu it in th e f r equ en cy r an ge f r om 40 k Hz u p t o 2 00 kH z w it h A S K m od u la tio n .

lwm 1602 d

Abstract: PR101 N044 PAW k-5 J2JF cd7y FM11 RF 08 ks-49 msc sdf TP1Y
Contextual Info: M O S » » 0 S& M OS Integrated Circuit j u P D FM, MW, 1 7 1 2 G F - 0 5 2 # tt m P L L J I 3 ? J i§ & > ' h P ~ 7 / ¿ P D 1 7 0 1 2 G F - 0 5 2 ( i : £ t £ # & J f c < & P L L J i & & v > ^ i M i f ; £ 5 £ F M f MW , L W 5 ^ J i f c C M O S LSI