NEC MARKING 8L Search Results
NEC MARKING 8L Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MG80C186-10/BZA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
|
||
| ICM7555MTV/883 |
|
ICM7555MTV/883 - Dual marked (5962-8950303GA) |
|
||
| MQ80C186-10/BYA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
|
||
| 54121/BCA |
|
54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
|
||
| 54F191/QEA |
|
54F191/QEA - Dual marked (5962-9058201EA) |
|
NEC MARKING 8L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
D65842
Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
|
OCR Scan |
jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys | |
code marking NEC
Abstract: date code marking NEC g1683
|
Original |
PA2610 PA2610, PA2610T1C code marking NEC date code marking NEC g1683 | |
|
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
Original |
||
renesas traceabilityContextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
Original |
||
nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
|
Original |
G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 | |
7805 nec
Abstract: nec 7805 7807 voltage regulator 7805 nec voltage regulator NEC JAPAN 7805 7807 regulator uPC78LO8 7805 SOT-89 1 in 7807 transistor pc781
|
Original |
yPC78LOO ThepPC781-00 uPC78LOOJ 7805 nec nec 7805 7807 voltage regulator 7805 nec voltage regulator NEC JAPAN 7805 7807 regulator uPC78LO8 7805 SOT-89 1 in 7807 transistor pc781 | |
smd code marking NEC
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
|
Original |
G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP | |
8251a usart interface from z80
Abstract: 72065B verilog code for 8254 timer NEC V30MX Rambus ASIC Cell OPENCAD CMOS Block library nec floppy circuit NEC 71059 NEC 71051 V30MX
|
OCR Scan |
TMXP-200 L427525 8251a usart interface from z80 72065B verilog code for 8254 timer NEC V30MX Rambus ASIC Cell OPENCAD CMOS Block library nec floppy circuit NEC 71059 NEC 71051 V30MX | |
|
Contextual Info: NEC PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The /¿PD431232L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. These |
OCR Scan |
32K-WORD 32-BIT uPD431232L 768-word 32-bit 100-pin 00203i PD431232L. PD431232LGF: | |
NEC V30MX
Abstract: 8255a Max mode system in 8086 microprocessor v 12719 40673 71055 Rambus ASIC Cell 40673 cmos marking code C76 verilog code for 8254 timer IC Ensemble
|
Original |
||
MARKING T6C
Abstract: lga 1155 package Code T6S M33 TRANSISTOR 14SSOP QFN-36 LAND PATTERN 14LGA 36pin qfn marking 6-PIN PLASTIC TSON nec 44pin
|
Original |
PX10051EJ35V0TN G0706 MARKING T6C lga 1155 package Code T6S M33 TRANSISTOR 14SSOP QFN-36 LAND PATTERN 14LGA 36pin qfn marking 6-PIN PLASTIC TSON nec 44pin | |
a70 8 pin icContextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n The jiPD42S16405L, 4216406L are 4,194,304wocds by 4 bits CMOS dynamic HAM w ith option«! hyperpage mode |
OCR Scan |
uPD42S16405L uPD4216405L jiPD42S16405L, 4216406L 304wocds /IPD42S16405L 1PD42S16405L, 421S405L 26-pin a70 8 pin ic | |
|
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321322, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit, the µPD44321322 is a 1,048,576-word by 32-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using |
Original |
PD44321182, 32M-BIT PD44321182 152-word 18-bit, PD44321322 576-word 32-bit PD44321362 | |
|
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321321, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit, the µPD44321321 is a 1,048,576-word by 32-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using |
Original |
PD44321181, 32M-BIT PD44321181 152-word 18-bit, PD44321321 576-word 32-bit PD44321361 | |
|
|
|||
|
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44322182, 44322322, 44322362 32M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT Description The µPD44322182 is a 2,097,152-word by 18-bit, µPD44322322 is a 1,048,576-word by 32-bit and the µPD44322362 is |
Original |
PD44322182, 32M-BIT PD44322182 152-word 18-bit, PD44322322 576-word 32-bit PD44322362 | |
|
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44322183, 44322323, 44322363 32M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The µPD44322183 is a 2,097,152-word by 18-bit, µPD44322323 is a 1,048,576-word by 32-bit and the µPD44322363 is |
Original |
PD44322183, 32M-BIT PD44322183 152-word 18-bit, PD44322323 576-word 32-bit PD44322363 | |
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
|
Original |
A12158EJ5V0DM00 Semiconductor2/9044 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358 | |
|
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD78P0308 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¡PD78P0308 is a m em ber of the ¿¡PD780308 Subseries of the 78K/0 Series, in w hich the on-chip m ask ROM of the ¿¡PD780308 is replaced with a one-tim e PROM or EPROM. |
OCR Scan |
PD78P0308 PD78P0308 PD780308 78K/0 PD78P0308KL-T | |
PA2610Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA2610 P チャネル MOS FET スイッチング用 µ PA2610 は,ヒート・スプレッダ内蔵の P チャネル MOS FET で,ポータブル機器のパワー・スイッチ等に最適で |
Original |
PA2610 PA2610T1C G16836JJ1V0DS00 G16836JJ1V0DS M8E02 PA2610 | |
|
Contextual Info: P R E L IM IN A R Y DATA SHEET MOS INTEGRATED CIRCUIT /ZPD78P098A 8-BIT SINGLE-CHIP MICROCONTROLLER The /iPD78P098A is a member of the ^PD78098 subseries in the 78K/0 series and is provided with a one time PROM to which a program can be written only once, or an EPROM to which a program can be written, |
OCR Scan |
/ZPD78P098A /iPD78P098A PD78098 78K/0 PD78P098A /xPD78P098A U10203EJ1V0DS01 | |
D78P014
Abstract: PD78P014 P25Y 14gc D78P0 d78p014 nec
|
OCR Scan |
uPD78P014 uPD78014 78K/0 PD78P014 VP15-202-1 IR3D-202-1 iiPD78P014CW: 64-pin PD78P014DW: 64-pln D78P014 P25Y 14gc D78P0 d78p014 nec | |
|
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 1M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling Logic (RSL) |
OCR Scan |
b45752S 0Gb411S | |
MKL series
Abstract: 78C18 UPD78C14 78C17 upd78c17 87AD d78c17 78C18GQ
|
OCR Scan |
uPD78C17 uPD78C18 jUPD78C18 16-bit /iPD78C18 PD78C17 MKL series 78C18 UPD78C14 78C17 87AD d78c17 78C18GQ | |
smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
|
Original |
OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes | |