NEC NPN RF Search Results

81E TRANSISTOR

Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
Contextual Info: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power

2SC2558

Abstract: 2SC2558K 2SC2559K ne0800 2SC2850K 2SC2850 2SC2559 bM274m NE080190 NE080490
Contextual Info: NEC/ NEC b M 2 7 4 m GQOESa6! ÔTS » N E C C 5bE D CALIFORNIA CLASS C, 860 MHz, 12 VOLT POWER TRANSISTOR NE0800-12 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE Vcc = 13.5 V NEC’s NE0800 series of NPN epitaxial UHF power transistors

PA101B

Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Contextual Info: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

2SC1449

Abstract: S10ms
Contextual Info: NEC SILICON POWER TRANSISTOR ELEC T R O N DEVICE 2SC 1449 AF POWER AMPLIFIER AND RF POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC1449 is an NPN general purpose transistor designed for use in audio and radio frequency power amplifiers.

2sC4703

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage V ce = 5 V . This low distortion

2SC107

Abstract: 2SC1070
Contextual Info: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE DESCRIPTION 2SC1070 1 , 2SC1070(2) The 2SC1070(1) is specifically designed for UHF RF amplifier applications. The 2SC1070(2> is specifically designed fo r UHF mixer applications. They feature high power gain, low noise

2SC4087

Abstract: 2SC4090 NE73439 NE73439B
Contextual Info: NEC/ 5bE D CALIFORNIA NEC b427414 00024btì b4T • N E C C T - 'S l- is NPN SILICO N GENERAL PU RPO SE TRANSISTO R NE73439 NE73439B OUTLINE DIMENSIONS FEATURES • H IG H G A IN BA N D W ID T H P R O D U C T : Units in mm OUTLINE 39 (SOT-143) 2.0 GHz (TYP)

4 ghz transistor

Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance

Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance

2SC1070

Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low

2SC2758

Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC2758,2SC2758R RF AM P. FOR UHF TV TUNER NPN SILICON TRANSISTOR The 2SC2758, 2SC2758R are specifically designed fo r U HF RF am p lifie r PACKAGE DIMENSIONS applications. The 2SC2758 and 2SC2758R feature high power gain, low

CHIP transistor 348

Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE680M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance

NEC 1357

Abstract: 1357 transistor NEC nec transistor 1357 transistor NEC 1357
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance

K 2645 transistor

Abstract: NEC 9724 transistor LC 7011 E 9547
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON RF TRANSISTOR NE662M04 FEATURES_ • HIGH GAIN BANDWIDTH: f r = 22 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 19.5 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE:

Contextual Info: DATA SHEET NEC / ELECTRON DEVICE SILICO N TRAN SISTO R / ^ ^ 2SC4179 FM /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in m illim eters • High G ain B a ndw idth P rodu ct: f j = 250 M Hz TYP.

2SC4179

Abstract: NF NPN Silicon Power transistor TO-3
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC4179 FM /AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIALTRANSISTOR FEATURES PACKAGE DIMENSIONS in m illim eters • High Gain Bandwidth Product: f j = 250 MHz TYP. . ± 2 1 0.1 • Low Output Capacitance: CQb = 1.8 pF TYP.

e981-08

Abstract: 2SC1658 2SC1656 NE98100 NE98108 NE98141 NE981
Contextual Info: NEC/ CALIFORNIA SEC SbE D b 4 2 7 4 m 0002525 2Tfl « N E C C NE98100 NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H G AIN B A NDW IDTH PRO DU CT: fr = 7 GHz The NE981 series of NPN silicon transistors is designed for mi­

PS2705-4

Abstract: PS270S4 PS2705
Contextual Info: NEC HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI OPTOCOUPLER PS2705-1 PS2705-2 pS2705-4 FEATURES_ DESCRIPTION • PS2705-1, -2 and -4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor.

2SC1070

Abstract: 9011 npn
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION 2 S C 1 0 7 0 B The 2SC1070(B) is specifically designed for UHF RF amplifier applications. The 2SC1070(B) features high PACKAGE DIMENSIONS power gain, low noise, and excellent forward AGC in m illim e te rs (inches)

2sc2026

Abstract: al 232 nec transistor 2sc2026
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC2026 RF LOW NOISE AM PLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Suitable fo r low noise a m p lifie r in the V H F to UH F band. in m illim eter inches 5.2MAX. FEATURES NF 3.0dB TYP. @f = 500M Hz

k 3531 transistor

Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF OUTLINE DIMENSIONS Units FEATURES • • • LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: • SMALL PACKAGE STYLE: in mm P ackage Outline T S 06 (Top View)

Contextual Info: NEC ELECTRON DEVICE SILICON TRANSISTOR / ^ ^ ^ ^ ^ ^ _ 2S C 1009A F M /A M RF AM PLIFIER, M IXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Gain B a ndw idth P rodu ct: f j = 250 M H z TY P.

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SC2780 is designed fo r audio frequency pre a m p lifie r app lica tion, especially in H y b rid Integrated Circuits, FEATURES PACKAGE DIMENSIONS

PS2002B

Abstract: NEC photo coupler PS2002 NEC PS2002B transistor 2002b PS2002B NEC PS200-2 nec reed relay
Contextual Info: NEC PHOTO COUPLER ELECTRON DEVICE PS2002B PHOTO COUPLER INDUSTRIAL USE - NEPOC SERIES - DESCRIPTION The PS2002B is an o p tic a lly coupled isolator containing a GaAsP lig h t em ittin g diode and an NPN silicon da rlingto n- connect­ ed phototransistor.