NEC SPEED GRADE Search Results

Contextual Info: JJPD77018 16-Bit Fixed Point Digital Signal Processor NEC NEC Electronics Inc. November 1994 Introduction Features The /L/PD77018 is the low-power version of NEC’s SPRX fam ily of high-speed 16-bit digital signal processors DSPs . Low power consum ption, a 3-volt power re­

9933B

Abstract: Pin Diagram of ic 9933b *9933b
Contextual Info: p PD77017 16-Bit Fixed Point Digital Signal Processor NEC NEC Electronics Inc. November 1994 Introduction Features The ¿¿PD77017 is the second in NEC's SPRX fam ily of high-speed 16-bit digital signal processors DSPs . Low power consum ption, a 3-volt power requirement, and

2SA1424

Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
Contextual Info: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and

Contextual Info: DEC 2 1992 NEC NEC Electronics Inc. JJPD488130, 488170 18-M egabit Rambus DRAM Advance Information October 1992 Description Ordering Information The /L/PD488130 and juPD488170 Rambus DRAMs RDRAM™ are extremely-high-speed dynamic CMOS RAMs organized as 2M words by 8 or 9 bits. Using its

2SA1463

Abstract: 2SC3736 MEI-1202 MF-1134
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SA1463 HIGH SPEED SW ITCHING PIMP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIM ENSIONS The 2SA1463 is designed for power amplifier and high speed switching applications. in millimeters FEATURES

aircraft logic gates

Abstract: 50944
Contextual Info: ISSP1 High-Speed Interface Family ISSP Series Features continued Description NEC Electronics has expanded the first generation of Instant Silicon Solutions Platform (ISSP™) with the ISSP1 High-Speed Interface (HSI) family, a new class of ASIC device that

UPD78F0818GK

Contextual Info: µPD78081x 8-BIT MICROCONTROLLERS WITH CAN CONTROLLER The µPD78081x devices are high-speed 8-bit microcontrollers with a CAN controller. The integration of the high-speed microcontroller and the CAN controller, together with the high level of integration using NEC’s

Contextual Info: DATA SHEET NEC M O S INTEGRATED CIRCU IT 16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTIO N The //PD784915 is a member of the NEC 78K/IV Series of microcontrollers equipped with a high-speed 16-bit CPU and a successor to the 78K/I Series 8-bit single-chip microcontrollers for VCR software servo control.

D1632

Abstract: DC1054A 1S2835A3 1S2835 1S2836 NEC DIODES 1S2836A4
Contextual Info: DATA SHEET NEC SILICON SWITCHING DIODES 1S2835,1 S2836 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODES : COMMON ANODE MINI MOLD FEATURES PACKAGE D IM ENSIO NS @ Low capacitance: Ct = 2.5 pF TYP. in m illim e te rs High speed switching: t rr = 4.0 ns M A X .

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 524,288 words x 32 bits x 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

1SS221

Abstract: ss221 1SS220 DC-1056A 1SS221A14
Contextual Info: DATA SHEET NEC SILICON SWITCHING DIODES 1SS220.1 SS221 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODES MINI MOLD FEATURES PACKAGE DIMENSIONS • Low capacitance: Ct = 4.0 pF M A X . in m illim e te r s • High speed switching: t rr = 3.0 ns M A X . 2.8 ± 0.2

TA 1319 AP

Abstract: pd4564323
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564323 is a high-speed 67,108,864 bits synchronous dynamic random-access memories, organized as 524,288 words x 32 bits x 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

2sc1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that

AKR 121

Abstract: 4564821G5 A7 RFTA
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4564421, 4564821 64M-bit Synchronous DRAM 2-bank, LVTTL Description The /iPD4564421,4564821 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 8,388,608x4x2 and 4,194,304x8x2 wordxbitxbank , respectively.

d4516161

Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

p103 t020

Abstract: 5A/p103 t020
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 78356 A 16 BIT SINGLE-CHIP MICROCOMPUTER The yuPD78356(A) contains a high-speed, high-performance 16-bit CPU and a data bus whose width can be switched between 8 bits and 16 bits (bus sizing function). The /xPD78356(A) also contains an ultrahigh-speed A/D converter and high-speed D/A converter, which are

nec 2741

Abstract: PS2741
Contextual Info: DATA SHEET NEC PHOTO COUPLER PS2741 ELECTRON DEVICE H IG H SPEED M IN I FLAT PHOTO COUPLER PS2741 is a 5-pin high speed photo coupler containing a GaAIAs red light em ittin g diode for a light em itting device on input side and a P-N photo diode and a high speed am plifier transistor on output side on one chip.

D4516821G5-A12

Abstract: nec 14t t4 bst 1046 xrba IC-3394 ba6x PD4516421 D4516821 nec 44pin SN1049
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT fd>D4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The jiPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

D4564323

Contextual Info: PRELIMINARY DATASHEET NEC MOS INTEGRATED CIRCUIT 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564323 is a high-speed 67,108,864 bits synchronous dynamic random -access memories, organized as 524,288 w o rd s x 3 2 b its x 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

NEC uPD 688

Abstract: CQ-111
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /i PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 2 1 6-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x

TC-5535

Abstract: MARKING J1A 2SC2946 MEI-1202 1661A TEB-1003 TC1661 2SC294
Contextual Info: DATA SHEET NEC MKKtKM SILICON TRANSISTOR 2SC2946 1 NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SC2946(1) is designed for High Speed Switching, especially in PACKAGE DIMENSIONS (in millim eters) Hybrid Integrated Circuits. FEATURES • High Voltage V ceo = 200 V

A91A

Abstract: pd45256 toyo uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF AYAA
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jUPD45256441,45256841,45256163 256M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access memories, organized as 16,777,216x4x4, 8,388,608x8x4, 4,194,304x16x4 word x bit x bank , respectively.