NELCO* MAX VOLTAGE Search Results

Nelco 4000-13

Abstract: Nelco 4000-6
Contextual Info: PCB Dielectric Material Selection and Fiber Weave Effect on High-Speed Channel Routing AN-528-1.1 Application Note As data rates increase, designers are increasingly moving away from wide parallel buses to serial buses with differential signaling. Differential signaling uses two output

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F654 The RF Line NPN Silicon RF P o w er TVansistor . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics

J476

Abstract: capacitor j476 NALCO
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package

MRF654

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF654 The R F Line 15 W 470 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r 12.5 V o lt UHF large-signal a m p lifie r app licatio n s in in d u stria l and co m m ercia l FM e q u ip m e n t ope ra tin g to 512 MHz.

MRF654

Abstract: nelco
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er Transistor . . . designed for 12.5 Volt U H F large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics

nelco

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistors MRF891 MRF891S . . . designed for 24 volt UHF large-signal, common-emitter amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 8 0 0-9 60 MHz.

Contextual Info: AH101 Medium Power, High Linearity Amplifier Applications •   Mobile Infrastructure CATV / DBS Defense / Homeland Security AH 10 1 SOT-89 Package Product Features         Functional Block Diagram GND 50 – 1500 MHz +47 dBm Output IP3

Thermonics T-2500

Abstract: T2500E T-2500E picosecond thermostream T2500 1E12 TN1084 2500E signal path designer 105
Contextual Info: LatticeSC High-Speed Backplane Measurements June 2006 Technical Note TN1118 Introduction The LatticeSC device contains multiple SerDes blocks arranged as quads. Each SerDes SERializer/DESerializer provides a serial high speed backplane transceiver interface and is capable of 3.8 GB/s performance.

transistor rf m 2528

Abstract: M 2530 motorola motorola M 2530 UHF POWER TRANSISTOR
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics

N4000-13

Abstract: AH101-G Nelco 4000-13 AH101-PCB ah101
Contextual Info: AH101 Medium Power, High Linearity Amplifier Applications •   Mobile Infrastructure CATV / DBS Defense / Homeland Security AH 10 1 SOT-89 Package Product Features         Functional Block Diagram GND 50 – 1500 MHz +47 dBm Output IP3

AH101-G

Abstract: Nelco 4000-13
Contextual Info: AH101-G Medium Power, High Linearity Amplifier Applications • Mobile Infrastructure • CATV / DBS • Defense / Homeland Security 1 10 AH SOT-89 Package Product Features • • • • • • • • Functional Block Diagram 50 – 1500 MHz +47 dBm Output IP3

Thermonics T-2500

Abstract: thermostream EYE DIAGRAM thermonics HPE3630A ORSO42G5 ORSO82G5 ORT42G5 ORT82G5 10GEC
Contextual Info: ORTx2G5, ORSOx2G5 and ORSPI4 High-Speed Backplane Measurements July 2004 Technical Note TN1027 Introduction The Lattice ORT82G5 and ORSO82G5 FPSC devices contain two Quad-SERDES blocks. The Lattice ORT42G5, ORSO42G5 and ORSPI4 FPSC devices contain one Quad-SERDES block. Each SERDES SERializer/DESerializer provides a serial high-speed backplane transceiver interface, operational at data rates up to 3.7 Gbit/s for the

SAS660

Abstract: MRF892
Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MRF892 The RF Line 14 W 900 MHz RF POWER TR A N SISTO R NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . d e s ig n e d for 2 4 volt U H F la r g e -sig n a l, c o m m o n - b a s e a m p lifie r a p p lic a t io n s in in d u stria l a n d c o m m e rc ia l F M e q u ip m e n t o p e ra tin g

TP04100A-1

Abstract: HPE3610A thermostream ps224 TP0410 HPE3630A Bit-Error HP6213A HPE3648A ORT42G5
Contextual Info: ORT42G5 and ORT82G5 High-Speed Backplane Measurements April 2003 Technical Note TN1027 Introduction The Lattice ORT82G5 FPSC device contains two Quad-SERDES blocks. The Lattice ORT42G5 FPSC device contains one Quad-SERDES block. Each SERDES SERializer/DESerializer provides a serial high-speed backplane

Contextual Info: TQM8M9076 0.05-4 GHz Digital Variable Gain Amplifier Applications • • • • Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio General Purpose Wireless 32-pin 5x5mm leadless package Product Features • • • • • • • • •

0603CS-47NXJLW

Abstract: TQM8M9077 JESD22-A114 N4000-13
Contextual Info: TQM8M9077 0.05-4 GHz Digital Variable Gain Amplifier Applications •    2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE IF and RF Applications General Purpose Wireless 32-pin 5x5mm leadless package Product Features    

2100 106

Abstract: nelco
Contextual Info: AH11 High Dynamic Range Dual Amplifier Applications • Mobile Infrastructure  Defense / Homeland Security  Fixed Wireless SOIC-8 package Product Features Functional Block Diagram  150 – 3000 MHz  +44 dBm OIP3 1900 MHz, balanced circuit  Single-ended performance:

TQM8M9075

Contextual Info: TQM8M9075 0.05-4 GHz Digital Variable Gain Amplifier Applications • • • • Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio General Purpose Wireless 32-pin 5x5mm leadless SMT package Product Features • • • • • • • •

N4000-13

Abstract: Nelco 4000-13
Contextual Info: TQM8M9076 0.05-4 GHz Digital Variable Gain Amplifier Applications 32-pin 5x5mm leadless SMT package The TQM8M9076 integrates a high performance digital step attenuator followed by a high linearity, broadband gain block. The input and output of the individual stages are

TQM8M9074

Abstract: Z11 Marking Code
Contextual Info: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality

MRF264

Abstract: MRF260 MRF262 MRF261
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 30 W 136-175 MHz N P N S IL IC O N RF POW ER T R A N S IS T O R RF POWER TR A N SISTO R . . d esig n ed fo r 12.5 -volt V H F Ia rg e -s ig n a lp o w e ra m p lifie rapplica­ tio ns in com m ercial and ind u stria l FM equipm ent.

nelco 2000

Contextual Info: TQM8M9076 0.05-4 GHz Digital Variable Gain Amplifier Applications •    Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio General Purpose Wireless 32-pin 5x5mm leadless package Product Features         

j580

Abstract: DV2820
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed prim arily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. • Low C rss — 4.5 pF @ V p s = 28 V

Contextual Info: TQM879026 0.7−4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure  CDMA, WCDMA, LTE  Repeaters 4x4 mm 24 Pin leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking