NESG3031 Search Results

NESG3031 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NESG3031M05	California Eastern Laboratories	NPN SILICON GERMANIUM RF TRANSISTOR	Original	PDF	224.02KB	9
NESG3031M05	NEC	NPN SiGe high frequency transistor.	Original	PDF	100.51KB	3
NESG3031M05-A	NEC	TRANS NPN 5.2GHZ M05	Original	PDF	187.15KB	10
NESG3031M05-EVNF16	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG3031M05 1.6GHZ	Original	PDF		9
NESG3031M05-EVNF24	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG3031M05 2.4GHZ	Original	PDF		9
NESG3031M05-EVNF58	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG3031M05 5.8GHZ	Original	PDF		9
NESG3031M05-EVNF58-A	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG3031M05	Original	PDF		9
NESG3031M05FB	NEC	NPN SiGe RF Transistor for Low Noise, High-gain Amplification Flat-lead 4-pin Thin-type Super Minimold (M05, 2012 Package)	Original	PDF	78.76KB	5
NESG3031M05-T1	California Eastern Laboratories	NPN SILICON GERMANIUM RF TRANSISTOR	Original	PDF	224.02KB	9
NESG3031M05-T1	NEC	NPN SiGe high frequency transistor.	Original	PDF	100.51KB	3
NESG3031M14	California Eastern Laboratories	NPN SiGe HIGH FREQUENCY TRANSISTOR	Original	PDF	506.77KB	9
NESG3031M14	NEC	NPN SiGe high frequency transistor.	Original	PDF	99.49KB	3
NESG3031M14-A	California Eastern Laboratories	NPN SiGe HIGH FREQUENCY TRANSISTOR	Original	PDF	506.75KB	9
NESG3031M14FB	NEC	NPN SiGe RF Transistor for Low Noise, High-gain Amplification 4-pin Lead-less Minimold (M14, 1208 Package)	Original	PDF	72.33KB	5

NESG3031M14FB-T3	NEC	NPN SiGe RF Transistor for Low Noise, High-gain Amplification 4-pin Lead-less Minimold (M14, 1208 Package)	Original	PDF	72.33KB	5
NESG3031M14-T3	NEC	NPN SiGe high frequency transistor.	Original	PDF	99.49KB	3
NESG3031M14-T3-A	California Eastern Laboratories	NPN SiGe HIGH FREQUENCY TRANSISTOR	Original	PDF	506.76KB	9

NESG3031 Price and Stock

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California Eastern Laboratories (CEL) NESG3031M05-EVNF16 EVAL BOARD NESG3031M05 1.6GHZ
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DigiKey	NESG3031M05-EVNF16	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NESG3031M05-EVNF58 EVAL BOARD NESG3031M05 5.8GHZ
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DigiKey	NESG3031M05-EVNF58	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NESG3031M05-EVNF24 EVAL BOARD NESG3031M05 2.4GHZ
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DigiKey	NESG3031M05-EVNF24	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NESG3031M05-EVNF58-A EVAL BOARD NESG3031M05
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DigiKey	NESG3031M05-EVNF58-A	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NEC Electronics Group NESG3031M05-T1-A
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Bristol Electronics	NESG3031M05-T1-A		3,836			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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NESG3031 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NESG3031M14 Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	NESG3031M14 NESG3031M14-A NESG3031M14-T3 NESG3031M14 NESG3031M14-A NESG3031M14-T3-A	PDF
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	NESG3031M14 NESG3031M14 NESG3031M14-T3 NESG3031M14-A NESG303ntrol	PDF
MARKING T1K Contextual Info: NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10.0 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • MAXIMUM STABLE POWER GAIN:	Original	NESG3031M05 OT-343 NESG3031M05-A NESG3031M05-T1-A MARKING T1K	PDF
transistor marking T1k ghz Abstract: MARKING T1K NESG3031M05 NESG3031M05-T1 ZL 58 transistor marking T1k Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz	Original	NESG3031M05 NESG3031M05-T1 transistor marking T1k ghz MARKING T1K NESG3031M05 NESG3031M05-T1 ZL 58 transistor marking T1k	PDF
3 w RF POWER TRANSISTOR NPN 5.8 ghz Abstract: RF TRANSISTOR 2.5 GHZ s parameter ZL+58 Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	NESG3031M14 NESG3031M14 NESG3031M14-A PU10415EJ04V0DS 3 w RF POWER TRANSISTOR NPN 5.8 ghz RF TRANSISTOR 2.5 GHZ s parameter ZL+58	PDF
transistor marking T1k ghz Abstract: NESG3031M05-A NESG3031M05 3 w RF POWER TRANSISTOR NPN 5.8 ghz NESG3031M05-T1-A Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	NESG3031M05 NESG3031M05 NESG3031M05-A PU10414EJ04V0DS transistor marking T1k ghz 3 w RF POWER TRANSISTOR NPN 5.8 ghz NESG3031M05-T1-A	PDF
NEC JAPAN Abstract: NESG3031M14 NESG3031M14-T3 Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification	Original	NESG3031M14 NESG3031M1conductor NEC JAPAN NESG3031M14 NESG3031M14-T3	PDF
NESG3031M14 Abstract: NESG3031M14-A NESG3031M14-T3-A Contextual Info: DATASHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz	Original	NESG3031M14 NESG3031M14-A NESG3031M14-T3-A NESG3031M14 NESG3031M14-A NESG3031M14-T3-A	PDF
Contextual Info: DATASHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz	Original	NESG3031M14 NESG3031M14-A NESG3031M14-T3-A	PDF
NESG3031M05 Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification	Original	NESG3031M05 NESG3031M05 NESG3031M05-T1	PDF
NESG3031M14 Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	NESG3031M14 NESG3031M14-A NESG30NEC NESG3031M14 NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A	PDF
2012 NEC Abstract: transistor marking T1k ghz nec 2012 NESG3031M05 NESG3031M05-T1 MARKING T1K transistor marking T1k Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification	Original	NESG3031M05 2012 NEC transistor marking T1k ghz nec 2012 NESG3031M05 NESG3031M05-T1 MARKING T1K transistor marking T1k	PDF
NESG3031M05-T1-A Abstract: NESG3031M05 Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification	Original	NESG3031M05 NESG3031M05 NESG3031M05-T1-A	PDF
transistor marking T1k ghz Abstract: NESG3031M05 NESG3031M05-A NESG3031M05-T1 MARKING T1K Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	NESG3031M05 transistor marking T1k ghz NESG3031M05 NESG3031M05-A NESG3031M05-T1 MARKING T1K	PDF

NESG3031M05-T1 Abstract: transistor marking T1k ghz NESG3031M05 NESG3031M05-A Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	NESG3031M05 NESG3031M05-T1 transistor marking T1k ghz NESG3031M05 NESG3031M05-A	PDF
NESG3031M14 Abstract: NESG3031M14-T3 Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz	Original	NESG3031M14 NESG3031M14-T3 NESG3031M14 NESG3031M14-T3	PDF
2012 NEC Abstract: NESG3031M05 NESG3031M05-A NESG3031M05-T1 transistor marking T1k ghz Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification	Original	NESG3031M05 NESG30NEC 2012 NEC NESG3031M05 NESG3031M05-A NESG3031M05-T1 transistor marking T1k ghz	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
mobile phone basic block diagram Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic	PDF
NE5510279A Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01 Contextual Info: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is	Original		PDF
isl 62 Abstract: PU10730JJ01V0TN NESG3031M14 NEC 4570 J300-2 53bs Contextual Info: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	NESG3031M14GPSLNA PU10730JJ01V0TN1 PU10730JJ01V0TN opt45 10opts isl 62 PU10730JJ01V0TN NESG3031M14 NEC 4570 J300-2 53bs	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Contextual Info: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original		PDF

NESG3031 Search Results

NESG3031 Datasheets (17)

NESG3031 Price and Stock

California Eastern Laboratories (CEL) NESG3031M05-EVNF16

California Eastern Laboratories (CEL) NESG3031M05-EVNF58

California Eastern Laboratories (CEL) NESG3031M05-EVNF24

California Eastern Laboratories (CEL) NESG3031M05-EVNF58-A

NEC Electronics Group NESG3031M05-T1-A

NESG3031 Datasheets Context Search

NESG3031M14

MARKING T1K

transistor marking T1k ghz

3 w RF POWER TRANSISTOR NPN 5.8 ghz

transistor marking T1k ghz

NEC JAPAN

NESG3031M14

NESG3031M05

NESG3031M14

2012 NEC

NESG3031M05-T1-A

transistor marking T1k ghz

NESG3031M05-T1

NESG3031M14

2012 NEC

mobile phone basic block diagram

FET marking code g5d

NE5510279A

isl 62

nec mosfet marked v75

2SK2500