NEWMARKET TRANSISTOR Search Results

Cv7003

Abstract: Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91
Contextual Info: Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors P N P Germanium Alloy Power Transistors Outline drawing No. M Ap p lies. To-3 . R E FE R E N C E T A B L E Maxim um ratings. C h aracte ristics T . mb = 25° C, Cad* BVc eo BVCbo BVebo *cm

NKT677

Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Contextual Info: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

Newmarket Transistors

Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

2SD1164-Z

Contextual Info: Preliminary Data Sheet 2SD1164-Z R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 SILICON POWER TRANSISTOR DESCRIPTION The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE = 2 000 to 30 000

Contextual Info: Preliminary Data Sheet 2SD1164-Z R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 SILICON POWER TRANSISTOR DESCRIPTION The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE = 2 000 to 30 000

2SA1646

Contextual Info: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,

2N2458

Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec

2SA1646

Abstract: 2SA1646-Z NEW TRANSISTOR
Contextual Info: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,

Contextual Info: Data Sheet N0801S R07DS0729EJ0100 Rev.1.00 May 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0801R. VCEO = 80 V IC DC = 1.0 A Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

N0201

Contextual Info: Data Sheet N0201R R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0201S. VCEO = 25 V IC DC = 1.0 A Miniature package SOT-23F (2SB798: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

Contextual Info: Data Sheet N0501R R07DS0724EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0501S. VCEO = 50 V IC DC = 1.0 A Miniature package SOT-23F (2SB1115: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

Contextual Info: Data Sheet N0500R R07DS0722EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0500S. VCEO = 50 V IC DC = 0.7 A Miniature package SOT-23F (2SB799: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

n0501

Contextual Info: Data Sheet N0501S R07DS0725EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0501R. VCEO = 50 V IC DC = 1.0 A Miniature package SOT-23F (2SD1615: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

Contextual Info: Data Sheet N0800R R07DS0726EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0800S. VCEO = 80 V IC DC = 0.3 A Miniature package SOT-23F (2SB800: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

Contextual Info: Data Sheet N0800S R07DS0727EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0800R. VCEO = 80 V IC DC = 0.3 A Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

PF600

Contextual Info: Data Sheet N0801R R07DS0728EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0801S. VCEO = 80 V IC DC = 1.0 A Miniature package SOT-23F (2SB804: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

Contextual Info: Data Sheet N0801S R07DS0729EJ0100 Rev.1.00 May 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0801R. VCEO = 80 V IC DC = 1.0 A Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

N-0202

Contextual Info: Data Sheet N0202R R07DS0720EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0202S. VCEO = 20 V IC DC = 2.0 A Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

Contextual Info: Data Sheet N0500S R07DS0723EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0500R. VCEO = 50 V IC DC = 0.7 A Miniature package SOT-23F (2SD1000: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

N0201

Contextual Info: Data Sheet N0201S R07DS0719EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0201R. VCEO = 30 V IC DC = 1.0 A Miniature package SOT-23F (2SD999: Package variation of 3pPoMM) PRODUCT LINEUP Part Number N0201S-T1-AT

Contextual Info: Data Sheet N0501S R07DS0725EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0501R. VCEO = 50 V IC DC = 1.0 A Miniature package SOT-23F (2SD1615: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

Contextual Info: Data Sheet N0800S R07DS0727EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0800R. VCEO = 80 V IC DC = 0.3 A Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

Contextual Info: Data Sheet N0500S R07DS0723EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0500R. VCEO = 50 V IC DC = 0.7 A Miniature package SOT-23F (2SD1000: Package variation of 3pPoMM) PRODUCT LINEUP Part Number