NF 0804 Search Results

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

et1600

Contextual Info: TCET1600 up to TCET4600 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arse­ nide i nf rared-emitti ng diodes i n a 4-lead up to 16-lead plastic dual inline package.

SYMS

Contextual Info: Backshells and Accessories 189-009 Banding Backshell / Molding Adapter For MIL-PRF-28876 Connectors 189 S 009 NF 13 08-04 Length 1/2” Increments See Note 2 Product Series Angular Function H = 45° J = 90° S = Straight Pressure Ring (See Note 4) O-Ring

2SC5317FT

Contextual Info: T O S H IB A 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2i e|2= 9dB (f=2GHz)

2SC5322FT

Contextual Info: TOSHIBA 2SC5322FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT O V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4dB f=2GHz High Gain : |S2i e|2= 10dB (f=2GHz) Unit in mm 1.2 ± 0.05 0.8 ± 0.05

2SC5256FT

Abstract: VHF-UHF Band Low Noise Amplifier
Contextual Info: TOSHIBA 2SC5256FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : |S2l e|2= 9.5dB (f=2GHz) 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)

2SC5261FT

Contextual Info: 2SC5261FT TOSHIBA TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261FT Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : |S2i e|2= 9.5dB (f=2GHz) 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)

M33 nec

Abstract: M33 TRANSISTOR NESG2046M33 marking T7
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification

Contextual Info: AUTOMOTIVE CURRENT TRANSDUCER HC2F100-S CLIPS 17186145422 Page 1/5 080425/1 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HC2F100-S CLIPS Introduction Principle of HC2F CLIPS Family

Contextual Info: AUTOMOTIVE CURRENT TRANSDUCER HC6H1000-S 18198151434 Page 1/ 5 080407/3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www .lem.com HC6H1000-S Introduction Principle of HC6H Family The HC6H Family is for use on the electronic measurement of

Contextual Info: AUTOMOTIVE CURRENT TRANSDUCER HC2F150-S CLIPS 17186145422 Page 1/ 5 080428/1 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HC2F150-S CLIPS Introduction Principle of HC2F CLIPS Family

Contextual Info: AUTOMOTIVE CURRENT TRANSDUCER HC6F800-S 18198102215 Page 1/ 5 080401/2 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www .lem.com HC6F800-S Introduction Principle of HC6F Family The HC6F Family is for use on the electronic measurement of

Contextual Info: AUTOMOTIVE CURRENT TRANSDUCER HC2F140-S CLIPS 17186145422 Page 1/ 5 080428/1 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HC2F140-S CLIPS Introduction Principle of HC2F CLIPS Family

Contextual Info: AUTOMOTIVE CURRENT TRANSDUCER HC6H700-S 18198151434 Page 1/ 5 080402/4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www .lem.com HC6H700-S Introduction Principle of HC6H Family The HC6H Family is for use on the electronic measurement of

Contextual Info: AUTOMOTIVE CURRENT TRANSDUCER HC2F250-S CLIPS 17186145422 Page 1/ 5 080429/1 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HC2F250-S CLIPS Introduction Principle of HC2F CLIPS Family

AT91SAM920

Abstract: cadstar AT91SAM9260 AT91SAM9260-EK ARM926 AT91SAM hyperlynx atmel application note AT91SAM9260 Electrical Characteristics hyperlynx atmel
Contextual Info: Signal Integrity and Power Integrity Analysis around the SDRAM Bus Activity Using an AT91SAM9260 Microcontroller 1. Introduction In the past, the primary concern for digital designers was to ensure timing compatibility between on-board devices. Device specifications pertaining to setup and hold

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

netlogic CAM

Abstract: "Content Addressable Memory" Netlogic Content Addressable Memory NetLogic Microsystems Priority Encoder CAM "content addressable memory" search compare 01AEH 0127H 0927H
Contextual Info: NL81480A NL82480A 1K X 64 2K X 64 Content Addressable Memory NCAM Features • • • • • • • • • 1K or 2K x 64 CAM architecture with 16-bit I/O interface Dual configuration registers for rapid context switching Readable Device ID Fast operating mode with no wait states after a no-match

Contextual Info: DISTINCTIVE CHARACTERISTICS 512 X 64-bit version of the popular MU9C1480 CMOS Content-addressable Memory CAM Two Mask registers allow masking of individual bits for both writing and comparing 64-bit internal data path multiplexed over a 16-bit I/O interface

09A7H

Contextual Info: P1480 LAN CAM P1480 LAN CAM 1kx64-Bit CMOS Preliminary Information Supersedes February 1992 edition - version 1 DS3112 - 2.0 September 1995 The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory CAM aimed at address filtering applications in Local-area Network (LAN) bridges

0309H

Contextual Info: *4 Î99S DISTINCTIVE CHARACTERISTICS 1K X 64-bit CMOS Content-addressable Memory CAM Vertical cascading and system flag generation require no external logic Memory Array width can be configured as a mixture of CAM and RAM on 16-bit boundaries to provide a flexible

44-PIN

Abstract: DS3112 P1480
Contextual Info: P1480 LAN CAM P1480 LAN CAM 1kx64-Bit CMOS Preliminary Information Supersedes February 1992 edition - version 1 DS3112 - 2.0 September 1995 The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory CAM aimed at address filtering applications in Local-area Network (LAN) bridges