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    NF 409 Search Results

    NF 409 Datasheets (1)

    Facon Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NF40-931
    		Facon Semiconductor Diode / Thyristor Packs Scan PDF 111.21KB 3
    SF Impression Pixel

    NF 409 Price and Stock

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    Taitien Electronics Co Ltd VTEUMCJANF-4.096000

    XTAL OSC VCXO 4.0960MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VTEUMCJANF-4.096000 Tape & Reel 100
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    Taitien Electronics Co Ltd OVETGLJANF-40.960000

    XTAL OSC XO 40.9600MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey OVETGLJANF-40.960000 1,000
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    Taitien Electronics Co Ltd VTEUPLJANF-40.960000

    XTAL OSC VCXO 40.9600MHZ CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VTEUPLJANF-40.960000 Tape & Reel 150
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    Glenair Inc 370MS038NF1409-8

    Circular MIL Spec Backshells ENVIROMENTAL BACKSHELLS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 370MS038NF1409-8 11
    • 1 $703.11
    • 10 $438.24
    • 100 $306.16
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    L-com Inc HG2409P-NF

    Antennas ANTENNA PATCH 2.4GHZ NF CONN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HG2409P-NF 5
    • 1 $87.48
    • 10 $73.45
    • 100 $65.16
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    NF 409 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC3953-SPICE

    Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
    Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f


    Original     		12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE PDF

    BSW39

    Abstract: lamb
    Contextual Info: BSW39 Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxiai Pianar Switching Transistor Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and sw itches Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


    OCR Scan     		BSW39 BSW39 lamb PDF

    FMM5714X

    Abstract: 805E-01 JESD22-A114-C 33064 international model 7400 1045E01 low noise amplifier MMIC
    Contextual Info: FMM5714X 37-42GHz Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3dB Typ. ・High Associated Gain : Gas = 22dB ( Typ.) ・Wide Frequency Band : 37-42GHz ・High Output Power : P1dB = 20dBm ( Typ. ) @f=42GHz ・Impedance Matched Zin/Zout = 50Ω


    Original     		FMM5714X 37-42GHz 37-42GHz 20dBm 42GHz FMM5714X 805E-01 JESD22-A114-C 33064 international model 7400 1045E01 low noise amplifier MMIC PDF

    EMM5717X

    Abstract: EMM5717
    Contextual Info: EMM5717X Ku / K Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 1.5dB Typ. @ f=12.7GHz ・High Associated Gain : Gas = 25dB ( Typ.) ・Broad Band : 12.7 - 24.0 GHz ・High Output Power : P1dB = 18dBm ( Typ. ) ・Impedance Matched Zin/Zout = 50Ω


    Original     		EMM5717X 18dBm EMM5717X EMM5717 PDF

    P44 transistor

    Abstract: TA8104 RCA-40915 rca transistor "TO-72 package" rCA TO-72
    Contextual Info: File No. 574 R F Transisto rs Solid State Division 40915 0.2 -to -1 .4 -G H z Low-Noise Silicon N-P-N Transistor For High-Gain Small-Signal Applications Features: • Low noise figure: NF = 2.5 dB max. with 11 dB gain at 450 MHz = 3.0 dB (typ.) at 890 MHz


    OCR Scan     		RCA-40915* P44 transistor TA8104 RCA-40915 rca transistor "TO-72 package" rCA TO-72 PDF

    Contextual Info: FMM5714X 37-42GHz Low Noise Amplifier MMIC FEATURES Low Noise Figure : NF = 3dB Typ. High Associated Gain : Gas = 22dB ( Typ.) Wide Frequency Band : 37-42GHz High Output Power : P1dB = 20dBm ( Typ. ) @f=42GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION


    Original     		FMM5714X 37-42GHz 37-42GHz 20dBm 42GHz FMM5714X PDF

    YC 27000

    Abstract: yc 428 transistor ED-4701 RO4003 FMM5709YC FMM5709
    Contextual Info: ES/FMM5709YC K-Band Low-Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=30GHz ・High Associated Gain : Gas = 21dB ( Typ.) @f=30GHz ・Broad Band : 17.5~30GHz ・High Output Power : P1dB = 12｡5dBm ( Typ. ) @f=30GHz ・Laminate SMT Package(YC-pkg)


    Original     		ES/FMM5709YC 30GHz 125dBm FMM5709YC YC 27000 yc 428 transistor ED-4701 RO4003 FMM5709 PDF

    EMM5717

    Contextual Info: EMM5717YF Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. ) •Impedance Matched Zin/Zout = 50ohm


    Original     		EMM5717YF 50ohm EMM5717YF EMM5717 PDF

    EMM5717

    Abstract: YD 1102
    Contextual Info: EMM5717YF Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. ) •Impedance Matched Zin/Zout = 50ohm


    Original     		EMM5717YF 50ohm EMM5717YF EMM5717 YD 1102 PDF

    EMM5717

    Abstract: EMM5717YF EMM5717YFT 337 SMD 544 mmic JESD22-A114-C J-STD-020B Sumitomo 1076
    Contextual Info: EMM5717YF Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. ) •Impedance Matched Zin/Zout = 50ohm


    Original     		EMM5717YF 50ohm EMM5717YF EMM5717 EMM5717YFT 337 SMD 544 mmic JESD22-A114-C J-STD-020B Sumitomo 1076 PDF

    Contextual Info: FMM5703YC K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.5dB Typ. @ f=30 GHz •High Associated Gain : Gas = 18dB ( Typ.) @ f=30 GHz •Broad Band : 24 - 30 GHz •High Output Power : P1dB = 6.0dBm ( Typ. ) @f=30GHz •Impedance Matched Zin/Zout = 50ohm


    Original     		FMM5703YC 30GHz 50ohm FMM5703YC PDF

    73D31

    Abstract: 26c311 EMM5717 EMM5717X D4444 9311H 4CC3 11D-9 A311D 6661D
    Contextual Info: EMM5717X Ku / K Band Low Noise Amplifier MMIC FEATURES Low Noise Figure : NF = 1.5dB Typ. @ f=12.7GHz High Associated Gain : Gas = 25dB ( Typ.) Broad Band : 12.7 - 24.0 GHz High Output Power : P1dB = 18dBm ( Typ. ) Impedance Matched Zin/Zout = 50Ω


    Original     		EMM5717X 18dBm EMM5717X 73D31 26c311 EMM5717 D4444 9311H 4CC3 11D-9 A311D 6661D PDF

    FMM5709VZ

    Abstract: ED-4701 RO4003 ka band lna
    Contextual Info: FMM5709VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=26GHz ・High Associated Gain : Gas = 21dB ( Typ.) @f=26GHz ・Broad Band : 17.5~32GHz ・High Output Power : P1dB = 12dBm ( Typ. ) @f=26GHz ・Ball Grid Array SMT Package(VZ-pkg)


    Original     		FMM5709VZ 26GHz 32GHz 12dBm FMM5709VZ ED-4701 RO4003 ka band lna PDF

    ka band lna

    Abstract: FMM5703VZ ED-4701 RO4003 ka band
    Contextual Info: FMM5703VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 2.5dB typ. @ f=32GHz ・High Associated Gain : Gas = 16dB (typ.) @f=32GHz ・Broad Band : 24~32GHz ・High Output Power : P1dB = 8dBm ( Typ. ) @f=32GHz ・Ball Grid Array SMT Package(VZ-pkg)


    Original     		FMM5703VZ 32GHz FMM5703VZ ka band lna ED-4701 RO4003 ka band PDF

    transistor NEC D 587

    Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
    Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage


    Original     		2SC4885 transistor NEC D 587 transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586 PDF

    mrf904

    Contextual Info: MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU max =11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz


    Original     		MRF904 To-72 mrf904 PDF

    FMM5702X

    Abstract: FMM5702
    Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		FMM5702X 27-32GHz FMM5702X FCSI0599M200 FMM5702 PDF

    Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB


    Original     		NE321000 NE321000 2e-12 08e-12 21e-12 025e-12 24-Hour PDF

    02S11

    Abstract: max 7176
    Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB


    Original     		NE321000 NE321000 24-Hour 02S11 max 7176 PDF

    874 561 0 4V

    Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
    Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		FMM5702X 27-32GHz FMM5702X FCSI0599M200 874 561 0 4V FMM5702 FUJITSU MMIC LNA PDF

    TC236

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.


    OCR Scan     		2SC4885 SC-70 CO193 TC236 PDF

    FMM5702

    Abstract: FMM5702X 34500 544 mmic 2732G NF 936
    Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		FMM5702X 27-32GHz FMM5702X FCSI0599M200 FMM5702 34500 544 mmic 2732G NF 936 PDF

    874 561 0 4V

    Abstract: FMM5702X FMM5702
    Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		FMM5702X 27-32GHz FMM5702X 874 561 0 4V FMM5702 PDF

    C 3807 transistor

    Abstract: NE38018 NE38018-TI-67 NE38018-TI-68
    Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 2 V, ID= 5 mA • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) • HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz


    Original     		NE38018 OT-343) NE38018 NE38018-TI-67 NE38018-TI-68 24-Hour C 3807 transistor NE38018-TI-67 NE38018-TI-68 PDF