NF 41 Search Results

tuning capacitors

Abstract: MKP capacitor capacitor 47 vishay film radial vishay guide 274 transistor capacitor MKP MKP axial MKP 422
Contextual Info: Selection Guide Vishay BCcomponents Film Capacitors FILTER AND TUNING APPLICATIONS Axial type Radial type MKP 416 - 420 1 nF - 1.2 µF URdc = 63 - 630 V www.vishay.com 274 MKP 422 KP 460 - 464 1 nF - 47 nF 47 pF - 62 nF URdc = 630 V URdc = 63 - 630 V 1.5kV surge voltage

QFP64 package

Abstract: RGB-888
Contextual Info: Philips Semiconductors Preliminary specification Video Input Processor VIP SAA7111 15 APPLICATION INFORMATION C15 100 nF C l * C13 100 nF BST C7 w 24 20 16 (15) (11) (7) AI22 — 13 (4) vss Ik 100 n F g C11 100 nF 100 nF 12 (3) 11 2 1 (2) (59) (58) 1QO nF

c124

Abstract: C1242 C124-2 0603 1940 C-124
Contextual Info: STB7003 TRI-BAND GSM/DCS/PCS LNA PRELIMINARY DATA • SUPPLY VOLTAGE 2.8V • LOW CURRENT CONSUMPTION • VERY LOW NOISE FIGURE: NF=1.5dB @ 950MHz NF=1.9dB @ 1850MHz NF=2dB @ 1950MHz • DIGITAL GAIN CONTROL MSOP10-EP exposed pad ORDER CODE STB7003 BRANDING

SW SPDT

Abstract: C128 STB7003 C124 kit C124-2 c1281
Contextual Info: STB7003 TRI-BAND GSM/DCS/PCS LNA • SUPPLY VOLTAGE 2.8V • LOW CURRENT CONSUMPTION • VERY LOW NOISE FIGURE: NF=1.5dB @ 950MHz NF=1.9dB @ 1850MHz NF=2dB @ 1950MHz • DIGITAL GAIN CONTROL MSOP10-EP exposed pad ORDER CODE STB7003 BRANDING 7003 APPLICATIONS

sw-spdt

Abstract: C1242 GSM LNA C128 STB7003 SW SPDT c124 s c1281 SW SPDT FOOTPRINT
Contextual Info: STB7003 TRI-BAND GSM/DCS/PCS LNA • SUPPLY VOLTAGE 2.8V • LOW CURRENT CONSUMPTION • VERY LOW NOISE FIGURE: NF=1.5dB @ 950MHz NF=1.9dB @ 1850MHz NF=2dB @ 1950MHz • DIGITAL GAIN CONTROL MSOP10-EP exposed pad ORDER CODE STB7003 BRANDING 7003 APPLICATIONS

Contextual Info: COND. CERAMIQUE POUR ALIMENTATIONS A DECOUPAGE H.F. CLASSE 1 CERAMIC CAPACITORS FOR H.F. SWITCHING POWER SUPPLIES CLASS 1 102 ⌱ eff. A 102 ⌱ eff. (A) 102 5 5 5 2 2 2 10 10 10 5 5 5 2 2 2 1 1 1 5 5 5 2 0,1 5 102 CEC 53 68 nF 220 nF 470 nF CEC 55 180 nF

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1,5dB MAX. @ f=20GHz NF=1.8dB (MAX.) @ f=24GHz NF=2.3dB (MAX.) @ f=28GHz • High Associated Gain: Gas=15.0dB (MIN.) @ f=20GHz Gas=12.0dB (MIN.) @ f=24GHz Gas=9.0dB (MIN.) @f=28GHz

Contextual Info: D1 Non resettable fuses www.schurter.com/pg01_2 Miniature Fuse, 5 x 20 mm, Quick-Acting F, NF, 220 VAC NF C 93-435 • 220 VAC · Quick-Acting F Description References Standards Weblinks - Low Breaking Capacity General Product Information - NF C 93-435 - Model HA21

gl5529

Abstract: micamp
Contextual Info: GL5529 SWITCHING TYPE DUAL PREAMPLIFIER AND LOW FRE QUENCY AMPLIFIER WITH ALC CIRCUIT Pin Configuration PRE O UT 1 [ 1 EQ1 NF [ MIC1 IN £ • • • Block Diagram 154 4 3 LINE1 NF UNE 1 OUT 17 DVcc [ 5 c> 16 ] FILTER R/P SWITCH [ 6 gj 15 ] GND - EQ2 NF [

Contextual Info: Type-N/BNC Adaptenuators 50Ω 3,6,10dB Maximum Ratings NF-BF-3 NF-BF-6 NF-BF-10 DC to 2000 MHz Operating Temperature -55°C to 100°C Storage Temperature -55°C to 150°C Input Power 0.5W Features • • • • • improved interface matching wideband, DC to 2000 MHz, useable to 4 GHz

Contextual Info: Type-N/BNC Adaptenuators 50Ω 3,6,10dB Maximum Ratings NF-BM-3 NF-BM-6 NF-BM-10 DC to 2000 MHz Operating Temperature -55°C to 100°C Storage Temperature -55°C to 150°C Input Power 0.5W Features • • • • • improved interface matching wideband, DC to 2000 MHz, useable to 4 GHz

vogt

Abstract: bridge rectifier 1N4007 VOGT 3 mH Y2-CAPACITOR vogt u2 bridge rectifier 1N4007 48 Transistor NF 47 VOGT r6 vogt r4 EVD25
Contextual Info: STEVAL-ILB004V1 Bill of materials BOM Item Qty Reference Part / value Voltage Watt Type 275 Vac EPCOS - order code B32922C3224K 1 1 C1 220 nF 2 1 C10, C14 10 F 3 1 C11 47 µF 35 V Electrolytic 4 2 C12, C13 100 nF 50V Ceramic 5 2 C16 10 nF 1600 V EPCOS - order code B32653A1103J

Contextual Info: Precision Series MKP 416/420 KP 460/464 Dielectric metallized polypropylene polypropylene ±2%, ±5%/E96 ±1%, ±2%, ±5%/E96 Preferred tol./E-series Encapsulation Climatic category Tan δ 10 kHz Insulation resist. R: C≤330 nF R x C: C>330 nF Pulse rise time at UR

TRANSISTOR C 4460

Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E
Contextual Info: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and

103MA

Abstract: 1D2 SOT-23 BCW68 BCW58 BCW57A BCW57 OES45 JR-101
Contextual Info: BCW 67 BCW 68 PIMP-Transistoren für NF-Treiberstufen und Schalteranwendungen BCW 67 und BCW 68 sind epitaktische PNP-Silizium -Planar-Transistoren m it Plastikum­ hüllung 23 A 3 DIN 41 86 9 S O T -2 3 für NF-Treiberstufen und Schalteranwendungen. Sie

AT-41511

Abstract: AT-41511-BLK AT-41511-TR1 AT-41533 AT-41533-BLK AT-41533-TR1 S21E AT415
Contextual Info: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and

nf 820

Abstract: AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 AT-41533-BLK AT-41533-TR1 S21E
Contextual Info: General Purpose, Low Noise NPN␣ Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and

TGA8061

Abstract: 2S13 TGA2512 TGA2512-SM TGA2600 TGA4507 TGA4600 LNA NF
Contextual Info: LNA NF Versus Frequency NF TGA4600.113dB Gain B TGA1342, 9dB Gain TGAl\328, 16dB Gain TGA4811, 15dB Gain TGA45^6-SM, 21dB Gain 2.5 dB fGA2513-SM, 17dB Ga/jl -i— 2.4 dB ;— ;-1- TGA8061, 18dB\Gain .

C143M078F30A002

Abstract: m-42 federleiste vg 95324 federleiste C143 vg95319 PLUG 41612 L-25X 78M64 DIN 41612 type h 15
Contextual Info: T> 71E 5301^50 DDGGTBS 4SÔ Bauform/Style M Polzahl/Number of contacts max. 78 NF-Standard + 2 Sonderkontakte/special contacts 24 NF-Standard + 8 Sonderkontakte/special contacts Fett gedruckte Bestell-Nummern = Vorzugstypen. Preferred items in bold print.

transistor Bc 540

Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Contextual Info: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt

IC 431

Abstract: 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22
Contextual Info: 2SC5277A Ordering number : ENA1075 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).

2SC5490

Abstract: ENN6289 TA 8644
Contextual Info: Ordering number:ENN6289 NPN Epitaxial Planar Silicon Transistor 2SC5490 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).

Contextual Info: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)

2N929

Abstract: 2N930 929-2N
Contextual Info: 2 N 929 • 2 N 930 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharme NF-Verstärker Applications: Low noise AF am plifiers Besondere Merkmale: Features: • Besonders rauscharm bei kleinen Kollektorström en