125 kHz "reader coil"
Abstract: u2270b demo
Text: Tem ic S e m i c o n d u c t o r s Extended Reading Range with Large Reader Antennas with U2270B Theoretical coupling factor via reading distance, optimized reader antenna diameter r = a a, r ( ram ) Figure 1. Coupling factor vs. coil radius and distance
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U2270B
U2270B
TK5560A-PP
TK5530
TK5550
125 kHz "reader coil"
u2270b demo
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Untitled
Abstract: No abstract text available
Text: SKiiP 38NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 3 Tj = 25 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C tpsc 79 A 115 A Ts = 70 °C ICRM = 3 x ICnom IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in
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38NAB12T4V1
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skiip nab 125
Abstract: 3nab
Text: SKiiP 38NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 3 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections
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38NAB12T4V1
38NAB12T4V1
skiip nab 125
3nab
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mmic sot-89
Abstract: darlington amplifiers SNA-487 sna-186 SNA-486 SNA-176 STANFORD sna476
Text: Stanford Microdevices Characteristics of GaAs MMIC 50 Ohm Gain Blocks This section contains G a A s M M IC gain blocks from Stanford Microdevices. The devices below provide exceptional performance from D C to as high as 10 GHz. These monolithic HBT Darlington amplifiers are designed
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50-ohm
SNA-100
SNA-200
SNA-300
SNA-400
SNA-500
SNA-600
DC-10
OT-89
mmic sot-89
darlington amplifiers
SNA-487
sna-186
SNA-486
SNA-176 STANFORD
sna476
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Phicap capacitors
Abstract: EPCOS MKP 40
Text: Film Capacitors Metallized Polypropylene Film Capacitors MKP Series/Type: B32656S Date: December 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B32656S
B32656S
Phicap capacitors
EPCOS MKP 40
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Untitled
Abstract: No abstract text available
Text: SEMiX101GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 160 A Tc = 80°C 123 A 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 121 A Tc = 80°C 91 A 300 A -40 . 175 °C ICRM = 3xICnom VGES
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SEMiX101GD12T4s
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Untitled
Abstract: No abstract text available
Text: SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 121
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SKM100GB12T4
swi009
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SOT-26
Abstract: t06 sot 23 SOT26 upc2713t UPC1678G
Text: Wideband Amplifiers 'V - v î tigmr- U14mb ï* ' < *ttm • TTTV. - Vec V MIN | NF (dB) Icc (mA) TYP M A X TYP Gain (dB) MIN TYP M AX R L out (dB) (dB) TYP TYP PldB (dBm) TYP ISO L (dB) TYP «<* «04» ¿¡SSL 4 •1 * J ! '. UPC1675G 1900 5 12 17 22 5.5
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UPC1678GV
UPC1688G
UPC2708T2
UPC2709T2
UPC2710T
UPC2711T2
UPC2711TB2
UPC2712T2
UPC2712TB2
UPC2713T
SOT-26
t06 sot 23
SOT26
UPC1678G
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Untitled
Abstract: No abstract text available
Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX303GB12E4s
E63532
AppliMiX303GB12E4s
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Untitled
Abstract: No abstract text available
Text: SEMiX101GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 3xICnom VGES VCC = 800 V VGE ≤ 15 V Tj = 150 °C VCES ≤ 1200 V
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SEMiX101GD12T4s
E63532
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SEMIX101GD12E4S
Abstract: No abstract text available
Text: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX101GD12E4s
E63532
SEMIX101GD12E4S
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Untitled
Abstract: No abstract text available
Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C
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SEMiX303GB12E4s
E63532
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semix303gb12e4s
Abstract: No abstract text available
Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V
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SEMiX303GB12E4s
SEMiX303GB12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX101GD12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX101GD12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SKiiP 38AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM MiniSKiiP 3 ICRM = 3 x ICnom tpsc V 115 A 93 A 100 A 300 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C
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38AC12T4V1
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX303GB12E4s
E63532
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX303GB12E4s
SEMiX303GB12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SKiiP 38AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM MiniSKiiP 3 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 1200 V 115 A 93
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38AC12T4V1
38AC12T4V1
E63532
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ic 7808
Abstract: da5276 remote u9280m u2270b demo U9280m magnetic door sensor MS-1 IMMOBILIZER Antenna Coil car alarm using a microcontroller TK5561 Transponder immobiliser
Text: Reader IC U2270B CFE 95 9860 COIL1 Driver & RF VS Oscillator COIL2 OSC Enable VBatt Power supply Standby MS =1 mC U2270B Output Input NF read channel GAIN The U2270B serves as interface between the transponder and the microcontroller that compares the received data.
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U2270B
U2270B
U9280M
U9280M:
U2741B
U3741BM
T5743N
U9280M
ic 7808
da5276
remote u9280m
u2270b demo
magnetic door sensor MS-1
IMMOBILIZER Antenna Coil
car alarm using a microcontroller
TK5561
Transponder immobiliser
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B32686S
Abstract: No abstract text available
Text: Film Capacitors Metallized Polypropylene Film Capacitors MFP Series/Type: B32686S Date: December 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B32686S
B32686S
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SII400S12
Abstract: No abstract text available
Text: SII400S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode
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SII400S12
125oC
400A/us
SII400S12
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igbt module
Abstract: SID400S12 IGBT 300A IGBT 800
Text: SID400S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode
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SID400S12
125oC
400A/us
igbt module
SID400S12
IGBT 300A
IGBT 800
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ic 565 application
Abstract: ic 565 igbt module NF 565 ic SDI400S12 IGBT 300A
Text: SDI400S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode
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SDI400S12
125oC
400A/us
ic 565 application
ic 565
igbt module
NF 565 ic
SDI400S12
IGBT 300A
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SKM100GAL12T4
Abstract: No abstract text available
Text: SKM100GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C
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SKM100GAL12T4
SKM100GAL12T4
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