NF 838 G Search Results

712M*838

Abstract: NF 838 G
Contextual Info: Series 72 Guardian 712M*838 Metal EMI/RFI Environmental Adapter for Mighty Mouse Connectors for Series 72 Annular Convoluted Tubing Metal Guardian System Mighty Mouse connector adapter fitting How To Order Angle: M, N, S Product Series 712 M Finish Table III

Contextual Info: MMA003AA 2-22GHz, 13dB Gain Low-Noise Wideband Distributed Amplifier Features • >15dBm P1dB with 1.8dB NF and 13dB gain at 10GHz • Gain flatness ~ +/-0.75dB • <2dB NF from 6-12GHz • Single supply voltage of +5V @ 50mA • Input and Output matched to 50Ω

Contextual Info: bOE D • SIEMENS fl235bDS 0GSD727 S73 « S I E G SIEMENS AKTIENGESELLSCHAF T ' é S - O á TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching

Contextual Info: SAMSUNG ELECTRONICS INC bGE D • DG11SS7 b3b TRANSISTORS FUNCTION GUIDE 1-3. RF/VHF/UHF Amplifier Transistors 1-3-1. SOT-23 Type Transistors Device Condition It MHz C ob VcEO <pF) NPN G pe Condition NF(dB) hFE Ia s c (dB) Vce lc (V) (mA) MIN TYP MAX (V)

NF 838 G

Contextual Info: FUNCTION GUIDE TRANSISTORS 1-3. RF/VHF/UHF Amplifier Transistors 1-3-1. SOT-23 Type Transistors Device Condition V ce V NPN fT (MHz) C ob (pF) VcEO G pe (dB) MIN lc (mA) MIN TYP M AX (V) KSC2734(H8Z} KSC3120(H9Z) KSC2759{H6X) K ST 5 1 79 KSC2757(H3X) KSC2758(H4Z}

J525

Abstract: NF 838 G j525 transistor j133
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power IVansistor . . . designed for 12.5 volt UHF large-signal, common-base amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 806-960 MHz. • Specified 12.5 Volt, 870 MHz Characteristics

Contextual Info: Central Semiconductor Corp. CMPT3019 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applica­

Contextual Info: Central" Semiconductor Corp. CZT3019 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high cur­ rent general purpose amplifier applications.

FLK012

Abstract: k d 998 0
Contextual Info: FLK012WF X - k i i B a n d P o w e r it/A s I E I s ABSOLUTE MAXIMUM RATING (Am bient Tem perature Ta=25°C Symbol (tern Condition Rating Ufirit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 1.15 w Total Power B N p M Pt Storage Temperature

f847

Abstract: MRF847 j525 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon RF Pow er Transistor . . . designed for 12.5 volt UHF large-signal, co m m o n -b a se am plifier applica­ tions in industrial and com m ercial FM equipm ent operating in the range of 8 0 6 -9 6 0 MHz.

cmos mixer 3v

Contextual Info: RF2495 I MICRO-DEVICES 900MHZ 3V LOW CURRENT LNA/MIXER Typical Applications • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • General Purpose Frequency Conversion

1n914 SOT323

Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which7 is designed for low power surface mount applications. http://onsemi.com

310-001

Abstract: series 310
Contextual Info: 310 310-001 O-Ring Sealed Shrink Boot Adapter Rotatable Coupling - Standard Profile 310 F S 001 M 16 D T CONNECTOR DESIGNATORS Product Series A-F-D-G* H-J*-L-S Connector Designator ROTATABLE COUPLING Drain Holes 4 Places Optional Cable Entry E Table III

Raychem boot

Abstract: raychem angle boots AS85049
Contextual Info: 310 310-001 O-Ring Sealed Shrink Boot Adapter Rotatable Coupling - Standard Profile 310 F S 001 M 16 D T CONNECTOR DESIGNATORS Product Series A-F-G* H-J*-L-S Shrink Boot Table III Omit for None Connector Designator Drain Holes (Omit for None) Angle and Profile

Contextual Info: m ìm n FLK012WF T U JIO U X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general

770-001S107

Abstract: AS85049
Contextual Info: 310 310-001 O-Ring Sealed Shrink Boot Adapter Rotatable Coupling - Standard Profile 310 F S 001 M 16 D T CONNECTOR DESIGNATORS Product Series A-F-G* H-J*-L-S Shrink Boot Table III Omit for None Connector Designator Drain Holes (Omit for None) Angle and Profile

LN29729

Abstract: gh 09 ot 239 mil-DTL-81511
Contextual Info: Adapters 310-001 O-Ring Sealed Shrink Boot Adapter Rotatable Coupling - Standard Profile CONNECTOR DESIGNATOR: A F G* H J* L S Finish B = Cadmium Plate, Olive Drab C = Anodize, Black G = Hard Coat, Anodic M = Electroless Nickel NF = Cadmium Plate, Olive Drab

HI-8592

Abstract: outline of the heat sink for JEDEC HI-3584
Contextual Info: HI-8592, HI-8593, HI-8594 February, 2011 Single-Rail ARINC 429 Differential Line Driver GENERAL DESCRIPTION PIN CONFIGURATION TOP VIEW The HI-8592 bus interface product is a silicon gate CMOS device designed as a line driver in accordance with the ARINC 429 bus specifications. The part includes a negative voltage converter allowing it to operate from a single +5V supply using only two external capacitors. The part also features high-impedance outputs

FLK012WF

Contextual Info: FLK012WF X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general

arinc 429 serial transmitter

Abstract: HI-8592 HI-8593PS AN-300 HI-3584 HI-8570 HI-8571 SOIC-8 8593 8594C
Contextual Info: HI-8592, HI-8593, HI-8594 October, 2010 Single-Rail ARINC 429 Differential Line Driver GENERAL DESCRIPTION PIN CONFIGURATION TOP VIEW The HI-8592 bus interface product is a silicon gate CMOS device designed as a line driver in accordance with the ARINC 429 bus specifications. The part includes a negative voltage converter allowing it to operate from a single +5V supply using only two external capacitors. The part also features high-impedance outputs

cd 1691 cp

Abstract: FSX52WF FSX52W FSX52 FUJITSU MICROWAVE
Contextual Info: FSX52W F General Purpose GciAs F E T s A B SO LU T E M AXIM UM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 12 V Gate-Source Voltage vgs -5 V Total Power Dissipation Ptot 1.5 w Storage Temperature Tstg -65 tc +175

Contextual Info: RF2411
 
   
      • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • General Purpose Frequency Conversion

C347

Abstract: RF2418
Contextual Info: RF2418
 

      • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • 433MHz and 915MHz ISM Band Receivers • Spread Spectrum Communication Systems • General Purpose Frequency Conversion

Hitachi transistor

Contextual Info: 2SC5141 Silicon NPN Epitaxial HITACHI ADE-208-228 1st. Edition Application V H F / U H F wide band amplifier Features • High gain bandwidth product fT = 5.8 G H z typ • High gain, low noise figure PG = 13 dB typ, N F = 1.6 dB typ at f = 900 M H z Outline