712M*838
Abstract: NF 838 G
Text: Series 72 Guardian 712M*838 Metal EMI/RFI Environmental Adapter for Mighty Mouse Connectors for Series 72 Annular Convoluted Tubing Metal Guardian System Mighty Mouse connector adapter fitting How To Order Angle: M, N, S Product Series 712 M Finish Table III
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770-001S103
770-001S104
770-001S105
770-001S106
770-001S107
712M*838
NF 838 G
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Untitled
Abstract: No abstract text available
Text: MMA003AA 2-22GHz, 13dB Gain Low-Noise Wideband Distributed Amplifier Features • >15dBm P1dB with 1.8dB NF and 13dB gain at 10GHz • Gain flatness ~ +/-0.75dB • <2dB NF from 6-12GHz • Single supply voltage of +5V @ 50mA • Input and Output matched to 50Ω
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MMA003AA
2-22GHz,
15dBm
10GHz
6-12GHz
MM-PDS-0004
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1n914 SOT323
Abstract: No abstract text available
Text: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which7 is designed for low power surface mount applications. http://onsemi.com
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MMBT2222AWT1
OT-323/SC-70
SC-70
1n914 SOT323
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310-001
Abstract: series 310
Text: 310 310-001 O-Ring Sealed Shrink Boot Adapter Rotatable Coupling - Standard Profile 310 F S 001 M 16 D T CONNECTOR DESIGNATORS Product Series A-F-D-G* H-J*-L-S Connector Designator ROTATABLE COUPLING Drain Holes 4 Places Optional Cable Entry E Table III
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Raychem boot
Abstract: raychem angle boots AS85049
Text: 310 310-001 O-Ring Sealed Shrink Boot Adapter Rotatable Coupling - Standard Profile 310 F S 001 M 16 D T CONNECTOR DESIGNATORS Product Series A-F-G* H-J*-L-S Shrink Boot Table III Omit for None Connector Designator Drain Holes (Omit for None) Angle and Profile
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DIN 433
Abstract: 3x45 B 834 Y matsua capacitor 2 uf
Text: Insulating Parts B 25 901 For increasing the clearance of capacitors with screw terminals M10; minimum distance between the terminals: 35 mm. Suitable for case types B 25 834-+★★★★-K4 and B 25 838-+★★★★-K4. The insulating parts are made of polyamide.
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5555-K4
5555-K4.
DIN 433
3x45
B 834 Y
matsua capacitor 2 uf
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770-001S107
Abstract: AS85049
Text: 310 310-001 O-Ring Sealed Shrink Boot Adapter Rotatable Coupling - Standard Profile 310 F S 001 M 16 D T CONNECTOR DESIGNATORS Product Series A-F-G* H-J*-L-S Shrink Boot Table III Omit for None Connector Designator Drain Holes (Omit for None) Angle and Profile
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LN29729
Abstract: gh 09 ot 239 mil-DTL-81511
Text: Adapters 310-001 O-Ring Sealed Shrink Boot Adapter Rotatable Coupling - Standard Profile CONNECTOR DESIGNATOR: A F G* H J* L S Finish B = Cadmium Plate, Olive Drab C = Anodize, Black G = Hard Coat, Anodic M = Electroless Nickel NF = Cadmium Plate, Olive Drab
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MIL-DTL-5015,
MIL-DTL-38999
MIL-DTL-28840
MIL-DTL-81511
LN29729
gh 09
ot 239
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HI-8592
Abstract: outline of the heat sink for JEDEC HI-3584
Text: HI-8592, HI-8593, HI-8594 February, 2011 Single-Rail ARINC 429 Differential Line Driver GENERAL DESCRIPTION PIN CONFIGURATION TOP VIEW The HI-8592 bus interface product is a silicon gate CMOS device designed as a line driver in accordance with the ARINC 429 bus specifications. The part includes a negative voltage converter allowing it to operate from a single +5V supply using only two external capacitors. The part also features high-impedance outputs
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HI-8592,
HI-8593,
HI-8594
HI-8592
HI-8593
HI-8594
whi03
outline of the heat sink for JEDEC
HI-3584
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FLK012WF
Abstract: No abstract text available
Text: FLK012WF X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general
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FLK012WF
FLK012WF
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arinc 429 serial transmitter
Abstract: HI-8592 HI-8593PS AN-300 HI-3584 HI-8570 HI-8571 SOIC-8 8593 8594C
Text: HI-8592, HI-8593, HI-8594 October, 2010 Single-Rail ARINC 429 Differential Line Driver GENERAL DESCRIPTION PIN CONFIGURATION TOP VIEW The HI-8592 bus interface product is a silicon gate CMOS device designed as a line driver in accordance with the ARINC 429 bus specifications. The part includes a negative voltage converter allowing it to operate from a single +5V supply using only two external capacitors. The part also features high-impedance outputs
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HI-8592,
HI-8593,
HI-8594
HI-8592
HI-8593
HI-8594
ver76)
arinc 429 serial transmitter
HI-8593PS
AN-300
HI-3584
HI-8570
HI-8571
SOIC-8
8593
8594C
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Untitled
Abstract: No abstract text available
Text: RF2411 • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • General Purpose Frequency Conversion
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RF2411
RF2411
01GHz
10MHZ
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C347
Abstract: RF2418
Text: RF2418 • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • 433MHz and 915MHz ISM Band Receivers • Spread Spectrum Communication Systems • General Purpose Frequency Conversion
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RF2418
433MHz
915MHz
RF2418
C347
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Untitled
Abstract: No abstract text available
Text: bOE D • SIEMENS fl235bDS 0GSD727 S73 « S I E G SIEMENS AKTIENGESELLSCHAF T ' é S - O á TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching
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fl235bDS
0GSD727
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NF 838 G
Abstract: No abstract text available
Text: FUNCTION GUIDE TRANSISTORS 1-3. RF/VHF/UHF Amplifier Transistors 1-3-1. SOT-23 Type Transistors Device Condition V ce V NPN fT (MHz) C ob (pF) VcEO G pe (dB) MIN lc (mA) MIN TYP M AX (V) KSC2734(H8Z} KSC3120(H9Z) KSC2759{H6X) K ST 5 1 79 KSC2757(H3X) KSC2758(H4Z}
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OT-23
KSC2734
KSC3120
KSC2759
KSC2757
KSC2758
KST10
KSC2756
KST24
KSC2755
NF 838 G
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J525
Abstract: NF 838 G j525 transistor j133
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power IVansistor . . . designed for 12.5 volt UHF large-signal, common-base amplifier applica tions in industrial and commercial FM equipment operating in the range of 806-960 MHz. • Specified 12.5 Volt, 870 MHz Characteristics
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MRF847
J525
NF 838 G
j525 transistor
j133
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Untitled
Abstract: No abstract text available
Text: Central Semiconductor Corp. CMPT3019 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applica
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CMPT3019
OT-23
CP305
13-November
OT-23
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Untitled
Abstract: No abstract text available
Text: Central" Semiconductor Corp. CZT3019 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high cur rent general purpose amplifier applications.
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CZT3019
OT-223
CP305
26-September
OT-223
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FLK012
Abstract: k d 998 0
Text: FLK012WF X - k i i B a n d P o w e r it/A s I E I s ABSOLUTE MAXIMUM RATING (Am bient Tem perature Ta=25°C Symbol (tern Condition Rating Ufirit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 1.15 w Total Power B N p M Pt Storage Temperature
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FLK012WF
3000Q.
Out99
FLK012
k d 998 0
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f847
Abstract: MRF847 j525 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon RF Pow er Transistor . . . designed for 12.5 volt UHF large-signal, co m m o n -b a se am plifier applica tions in industrial and com m ercial FM equipm ent operating in the range of 8 0 6 -9 6 0 MHz.
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MRF847
f847
MRF847
j525 transistor
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cmos mixer 3v
Abstract: No abstract text available
Text: RF2495 I MICRO-DEVICES 900MHZ 3V LOW CURRENT LNA/MIXER Typical Applications • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • General Purpose Frequency Conversion
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RF2495
900MHZ
MSOP-10
-25dBm
-15dBm
cmos mixer 3v
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Untitled
Abstract: No abstract text available
Text: m ìm n FLK012WF T U JIO U X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general
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FLK012WF
FLK012WF
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cd 1691 cp
Abstract: FSX52WF FSX52W FSX52 FUJITSU MICROWAVE
Text: FSX52W F General Purpose GciAs F E T s A B SO LU T E M AXIM UM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 12 V Gate-Source Voltage vgs -5 V Total Power Dissipation Ptot 1.5 w Storage Temperature Tstg -65 tc +175
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FSX52W
cd 1691 cp
FSX52WF
FSX52
FUJITSU MICROWAVE
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Hitachi transistor
Abstract: No abstract text available
Text: 2SC5141 Silicon NPN Epitaxial HITACHI ADE-208-228 1st. Edition Application V H F / U H F wide band amplifier Features • High gain bandwidth product fT = 5.8 G H z typ • High gain, low noise figure PG = 13 dB typ, N F = 1.6 dB typ at f = 900 M H z Outline
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2SC5141
ADE-208-228
Hitachi transistor
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