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    Panasonic Electronic Components ERJ-6ENF9313V

    RES SMD 931K OHM 1% 1/8W 0805
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    Panasonic Electronic Components ERJ-6ENF9311V

    RES SMD 9.31K OHM 1% 1/8W 0805
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    DigiKey ERJ-6ENF9311V Digi-Reel 53,553 1
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    Panasonic Electronic Components ERJ-8ENF9311V

    RES SMD 9.31K OHM 1% 1/4W 1206
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    DigiKey ERJ-8ENF9311V Cut Tape 48,185 1
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    Panasonic Electronic Components ERJ-6ENF9312V

    RES SMD 93.1K OHM 1% 1/8W 0805
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    DigiKey ERJ-6ENF9312V Cut Tape 38,605 1
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    Panasonic Electronic Components ERJ-14NF9310U

    RES SMD 931 OHM 1% 1/2W 1210
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    DigiKey ERJ-14NF9310U Digi-Reel 10,525 1
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    NF 931 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: COND. CERAMIQUE POUR ALIMENTATIONS A DECOUPAGE H.F. CLASSE 1 CERAMIC CAPACITORS FOR H.F. SWITCHING POWER SUPPLIES CLASS 1 102 ⌱ eff. A 102 ⌱ eff. (A) 102 5 5 5 2 2 2 10 10 10 5 5 5 2 2 2 1 1 1 5 5 5 2 0,1 5 102 CEC 53 68 nF 220 nF 470 nF CEC 55 180 nF


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    PDF F-67441

    Untitled

    Abstract: No abstract text available
    Text: 9 =W S age TNC P H Ro oir / See CONDENSATEURS CHIPS CERAMIQUE MULTICOUCHES MULTILAYER CERAMIC CHIP CAPACITORS Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards E12 E24 E48 E96


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    Untitled

    Abstract: No abstract text available
    Text: CONDENSATEURS CHIPS CERAMIQUE CLASSE 2 CNC Format / Format 0403 0603 Modèle normalisé / Standard model 0402 CNC 19 CNC 19 A L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards


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    93133

    Abstract: No abstract text available
    Text: CONDENSATEURS CHIPS CERAMIQUE CLASSE 2 CNC Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards L T W a L, W, T, pour chips étamé option E, H ou T : + 0,5 mm L, W, T, for tinned chips (option E, H or T) : + 0,5 mm


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    93133

    Abstract: No abstract text available
    Text: =Y lf exPage 9 rU e CeVoir / Se L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards L T W a L, W, T, pour chips étamé option E, H ou T : + 0,5 mm L, W, T, for tinned chips (option E, H or T) : + 0,5 mm


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    CECC 32100

    Abstract: No abstract text available
    Text: 9 =W S age P H Ro oir / See CONDENSATEURS CHIPS CERAMIQUE CLASSE 1 CERAMIC CHIP CAPACITORS CLASS 1 Tolérances sur capacité Tolérance on capacitance BASSE TENSION LOW VOLTAGE ± 0,25 pF CU Conformes aux spécifications des normes CECC 32100 et NF C 93133


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    maa 0403

    Abstract: No abstract text available
    Text: CONDENSATEURS CHIPS CERAMIQUE CLASSE 2 CNC BASSE TENSION LOW VOLTAGE Format / Format 0403 0603 Modèle normalisé / Standard model 0402 CNC 19 CNC 19 A L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of


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    HSP50415

    Abstract: HSP50415EVAL1 HSP50415VI Q100
    Text: HSP50415 ADV ANCE I NF O R MA T ION Data Sheet January 2000 Wideband Programmable Modulator WPM File Number 4559.3 Features • Output Sample Rates to 100MSPS The HSP50415 Wideband Programmable Modulator (WPM) is a quadrature amplitude modulator/upconverter designed


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    PDF HSP50415 100MSPS HSP50415 16-bit HSP50415EVAL1 HSP50415VI Q100

    CECC 32101

    Abstract: 0805 cnc 331 MARKING CODE DE
    Text: =Y lf exPage 9 rU e CeVoir / Se CERAMIC CHIP CAPACITORS CLASS 2 BASSE TENSION LOW VOLTAGE Format / Format 0403 0603 Modèle normalisé / Standard model 0402 CNC 19 CNC 19 A L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of


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    HFA3963

    Abstract: HFA3683A HFA3783 HFA3841 HFA3861A HFA3861AIN HFA3861AIN96 ba part 2 date sheet W5610 "complementary code"
    Text: HFA3861A ADV ANCE I NF O R MA T ION Data Sheet November 1999 File Number 4776.1 Direct Sequence Spread Spectrum Baseband Processor Features The Intersil HFA3861A Direct Sequence Spread Spectrum DSSS baseband processor is part of the PRISM 2.4GHz radio chipset, and


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    PDF HFA3861A HFA3861A HFA3783 HFA3963 HFA3683A HFA3841 HFA3861AIN HFA3861AIN96 ba part 2 date sheet W5610 "complementary code"

    hfa3724 manual

    Abstract: "Complementary Code Keying" RSSI energy SDI scrambler HFA3683A HFA3783 HFA3841 HFA3861B HFA3861BIN HFA3861BIN96
    Text: HFA3861B ADV ANCE I NF O R MA T ION Data Sheet January 2000 File Number 4816 Direct Sequence Spread Spectrum Baseband Processor Features The Intersil HFA3861B Direct Sequence Spread Spectrum DSSS baseband processor is part of the PRISM 2.4GHz radio chipset, and


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    PDF HFA3861B HFA3861B HFA3783 hfa3724 manual "Complementary Code Keying" RSSI energy SDI scrambler HFA3683A HFA3841 HFA3861BIN HFA3861BIN96

    NE38018 V68

    Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
    Text: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz


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    PDF NE38018 NE38018-T1 NE38018-T2 NE38018 V68 transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792

    LB 1639

    Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
    Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz


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    PDF UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236

    TRIPATH TA2020

    Abstract: TRIPATH R104 OF potentiometer R101 TA1101B TRIPATH TECHNOLOGY tripath audio amp circuit TA2020 TA2020-02 nf 931
    Text: Tr i path Technol ogy, I nc. - Techni c a l I nf or m a t i on FILTER BOARD INSTRUCTIONS FOR USE OF THE FILTER BOARD FOR TRIPATH AMPLIFIERS Technical Information Revised March 2000 Reference: Excerpt from Application Note 4 Copyright 1997-2000 Tripath Technology, Inc. All Rights Reserved


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    PDF 20kHz 30kHz 10AX34 GBNA002 GBNC001 TRIPATH TA2020 TRIPATH R104 OF potentiometer R101 TA1101B TRIPATH TECHNOLOGY tripath audio amp circuit TA2020 TA2020-02 nf 931

    LB 1639

    Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


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    PDF UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem

    transistor Bf 444

    Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


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    PDF UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1

    Untitled

    Abstract: No abstract text available
    Text: RADIALL Département COAXIAL TECHNICAL DATA TITLE TITRE N .F / L C , F - 101. Rua Philibert Hoffmann Zona Industriali« OuMt 93116 - R06 NY-8OUS-BOIS Téléphona : 864-80-40 NOTICE TECHNIQUE PLAT, R 191.742 NF/LC.FADAPTOR, WITH FLANGE Séria . ADAPTOR NORMALISATION


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    nf 742

    Abstract: No abstract text available
    Text: RADIALL Département COAXIAL TECHNICAL DATA TITLE TITRE N .F / L C , F - 101. Rua Philibert Hoffmann Zona Industriali« OuMt 93116 - R06 NY-8OUS-BOIS Téléphona : 864-80-40 NOTICE TECHNIQUE PLAT, R 191.742 NF/LC.FADAPTOR, WITH FLANGE Séria . ADAPTOR NORMALISATION


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    PDF R06NY-8OUS-BOIS nf 742

    NF 831

    Abstract: No abstract text available
    Text: N U lICt Département COAXIAL ItCHNIQUÊ TECHNICAL ZM M 931*6 DATA - TA M phon* T IT L E T IT R E N-F / LC _ f - R 191.741 NF/LC.FADAPTOR, Séria . ^DAPTnrr N O R M A LISA TIO N IE C : _ CECC : _ SPECIFICATIONS M IL CABLES CABLES PROPERTIES


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    TRANSISTOR nf 842

    Abstract: D 843 Transistor transistor su 312
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:


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    PDF NE856 100mA UPA801T UPA801T UPA801T-T1 24-Hour TRANSISTOR nf 842 D 843 Transistor transistor su 312

    21134 015

    Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
    Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz


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    PDF NE38018 NE38018-T1 NE38018-T2 21134 015 nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051

    063 793

    Abstract: transistor v63
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain


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    PDF NE34018 NE34018 WS60-00-1 IR30-00-3 063 793 transistor v63

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz


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    PDF NE38018 NE38018-T1 NE38018-T2 Rn/50

    TRANSISTOR nf 842

    Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz


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    PDF NE856 100mA UPA801T UPA801T UPA801T-T1 TRANSISTOR nf 842 TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534