NF 936 Search Results

FSU01LG

Abstract: Eudyna Devices
Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

FSU01LG

Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

FSU01LG

Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

fujitsu GHz gaas fet

Abstract: fujitsu gaas fet FSU01LG
Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

FSU01LG

Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

452 fet

Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

TB3-750

Abstract: philips pm 3209 philips pm 3210 kss 210 1626 power Triode M6955 tb3/750 WJ 3 2xtb
Contextual Info: PHILIPS TEIODE for use as H.P. and L.F. amplifier and oscil­ lator, suitable for grounded grid circuits TEIODE pour utilisation en amplificatrice H.P. et B.F. et oscillatrice, propre aux circuits "grounded-grid" TEIODE zur Verwendung als HP- und NF-Verstärker und

fujitsu gaas fet

Abstract: FSU01LG
Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P ^ b = 20.0dBm Typ. • High Associated Gain: G ^ b = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@ f=12G Hz • Low Bias Conditions: V d s =3V, 10mA • Cost Effective Hermetic Microstrip Package

Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

FMM5702X

Abstract: FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

FMM5704X

Abstract: ZL 264
Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

FUJITSU MMIC LNA

Abstract: FUJITSU LNA
Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

874 561 0 4V

Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

874 561 0 4V

Abstract: FMM5702X FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

k 3192

Contextual Info: ENG No: AE-3192-NA AE-3192-NB DIM "D" 1 1 .43 .450 (16.18) . 637 DIM "C" (1 9.05 ) .750 (23.80) . 937 CCI DIM "A" SIZE (3.96) 2 . 1 56 3 4 5 6 7 8 9 DIM "B" PART No PART No AE-3192-NF AE-3192-NK (32.51 ) 1 . 280 (1 7.47 ) . 688 (39.67 ) 1 - 562 PART No

7PSAG-1946D

Abstract: SFP450 B 7624 diode v474 SFE10 TEA6820T TEA6822T VSO56 MHA256 388bn-1211z
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA6822T In Car Entertainment ICE car radio Preliminary specification File under Integrated Circuits, IC01 1995 Nov 22 Philips Semiconductors Preliminary specification In Car Entertainment (ICE) car radio TEA6822T FEATURES

U31-U39

Abstract: 09005aef8343b5fe MT36JSZF51272PDY-1G1D1
Contextual Info: 4GB x72, ECC, QR 240-Pin DDR3 SDRAM RDIMM Features DDR3 SDRAM RDIMM MT36JSZF51272PDY – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

cb7 door

Abstract: HEX22 EVB711XX EVB71111 EVB71111-868-ASK-C EVB71111-868-FSK-C EVB71111-915-FSK-C HC49 427Mm TH71112
Contextual Info: EVB71111 868/915MHz Receiver Evaluation Board Description Features ˆ ˆ ˆ ˆ ˆ Single-conversion superhet architecture for low external component count FSK demodulation with phase-coincidence demodulator Low current consumption in active mode and very low standby current

Contextual Info: 8GB, 16GB x72, ECC, QR 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT36KSF1G72PDZ – 8GB MT36KSF2G72PDZ – 16GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H0) • DDR3L functionality and operations supported as defined in the component data sheet

MT36KSF1G72PDZ-1G4

Contextual Info: 8GB, 16GB x72, ECC, QR 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT36KSF1G72PDZ – 8GB MT36KSF2G72PDZ – 16GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H0) • DDR3L functionality and operations supported as defined in the component data sheet

Contextual Info: 8GB, 16GB x72, ECC, QR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT36JSF1G72PDZ – 8GB MT36JSF2G72PDZ – 16GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H0) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

SAFCH915MAL0N00

Abstract: hc49/smd transistor lf SAFCH SAFCC868 HC49 smd HEX22 SFECF10M7HA00 EVB71111 EVB71111-868-ASK-C EVB71111-868-FSK-C
Contextual Info: EVB71111 868/915MHz Receiver Evaluation Board Description Features ! ! ! ! ! ! Single-conversion superhet architecture for low external component count FSK for digital data and FM reception for analog signal transmission FSK/FM demodulation with phase-coincidence demodulator

Contextual Info: EVB71111 868/915MHz Receiver Evaluation Board Description Features ̨ ̨ ̨ ̨ ̨ Single-conversion superhet architecture for low external component count FSK demodulation with phase-coincidence demodulator Low current consumption in active mode and very low standby current