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    NGB8207ABN Search Results

    NGB8207ABN Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NGB8207ABNT4G
    On Semiconductor NGB8207 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF 121.14KB 7
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    NGB8207ABN Price and Stock

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    Rochester Electronics LLC NGB8207ABNT4G

    IGBT 365V 20A D2PAK
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    DigiKey NGB8207ABNT4G Bulk 30,096 364
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    Littelfuse Inc NGB8207ABNT4G

    IGBT 365V 20A D2PAK
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    DigiKey () NGB8207ABNT4G Digi-Reel 1
    • 1 $2.30
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    NGB8207ABNT4G Cut Tape 1
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    NGB8207ABNT4G Reel 800
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    Newark NGB8207ABNT4G Reel 800
    • 1 $1.15
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    TME NGB8207ABNT4G 1
    • 1 $1.43
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    onsemi NGB8207ABNT4G

    Insulated Gate Bipolar Transistor, 20A I(C), 365V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics NGB8207ABNT4G 30,096 1
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    NGB8207ABN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NGB8207AB

    Abstract: ignition IGBT 8207A
    Contextual Info: NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    NGB8207AN, NGB8207ABN NGB8207AN/D NGB8207AB ignition IGBT 8207A PDF

    Contextual Info: NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    NGB8207AN, NGB8207ABN NGB8207AN/D PDF