NGTB30N60IHLWG Search Results
NGTB30N60IHLWG Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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NGTB30N60IHLWG |
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NGTB30N60 - TRANSISTOR IGBT, Insulated Gate BIP Transistor | Original | 177.22KB | 10 |
NGTB30N60IHLWG Price and Stock
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Rochester Electronics LLC NGTB30N60IHLWGIGBT TRENCH FS 600V 60A TO-247-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NGTB30N60IHLWG | Tube | 5,700 | 136 |
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onsemi NGTB30N60IHLWGIGBT TRENCH FS 600V 60A TO-247-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NGTB30N60IHLWG | Tube |
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Buy Now | |||||||
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NGTB30N60IHLWG | 5,700 | 149 |
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Buy Now | ||||||
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NGTB30N60IHLWG | 5,700 | 1 |
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NGTB30N60IHLWG Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NGTB30N60IHLWGContextual Info: NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is |
Original |
NGTB30N60IHLWG NGTB30N60IHLW/D | |
Contextual Info: Product Overview NGTB30N60IHLWG: IGBT 600V 30A Induction Heating For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides |
Original |
NGTB30N60IHLWG: NGTB30N60IHLWG O-247-3 |