NOISE PARAMETER FPD750 0.5W POWER PHEMT Search Results

NOISE PARAMETER FPD750 0.5W POWER PHEMT Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MGN1S1212MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0512MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN
MGN1S0508MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1D120603MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1D050603MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 5-6/-3V GAN

NOISE PARAMETER FPD750 0.5W POWER PHEMT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FPD750 Datasheet v2.3 0.5W POWER PHEMT FEATURES: • • • • • LAYOUT: 27 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency GENERAL DESCRIPTION: The FPD750 is	Original	FPD750 FPD750 22A114. MIL-STD-1686 MIL-HDBK-263.	PDF
noise parameter FPD750 0.5w power phemt Abstract: FPD750 MIL-HDBK-263 P100 Contextual Info: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE	Original	FPD750 FPD750 noise parameter FPD750 0.5w power phemt MIL-HDBK-263 P100	PDF
Contextual Info: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE	Original	FPD750 FPD750	PDF
Contextual Info: FPD750 Datasheet v2.4 0.5W POWER PHEMT FEATURES: • • • • • LAYOUT: 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency GENERAL DESCRIPTION: The FPD750	Original	FPD750 FPD750 OT343 22A114. MIL-STD-1686 MIL-HDBK-263.	PDF
FPD750 Abstract: transistor A114 Contextual Info: FPD750 Datasheet v3.0 0.5W POWER PHEMT FEATURES: • • • • • LAYOUT: 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency GENERAL DESCRIPTION: The FPD750	Original	FPD750 FPD750 OT343all 22-A114. MIL-STD-1686 MILHDBK-263. transistor A114	PDF
Contextual Info: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing	Original	FPD750 FPD7500 FPD750 mx750Î OT343, 12GHz 12GHzlable FPD750-000 FPD750-000SQ	PDF
FPD750 Abstract: MIL-HDBK-263 InP HBT transistor DS090609 Contextual Info: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing	Original	FPD750 FPD7500 FPD750 25mx750m OT343, 12GHz 38dBm MIL-HDBK-263 InP HBT transistor DS090609	PDF