n503
Abstract: n383 LCD N96 N349 n352 SFAA3L N555 data sheet n345 N546 N582
Text: Z-Power LED X10490 Technical Data Sheet *Customer : Specification SFAA3L CUSTOMER Checked by Approved by SUPPLIER Drawn by Approved by Rev. 1.00 December 2009 www.acriche .com www.acriche.com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical
|
Original
|
PDF
|
X10490
SSC-QP-7-07-24
n503
n383
LCD N96
N349
n352
SFAA3L
N555 data sheet
n345
N546
N582
|
ntp 3100
Abstract: ntp 177 750 ntp 177 590 psp 1004 993 395 pnp npn psp 1003 ED-4701 NOQ code EIAJ ED-4701 305 SFAF3L
Text: Z-Power LED X10490 Technical Data Sheet *Customer : Specification SFAF3L CUSTOMER Checked by Approved by SUPPLIER Drawn by Approved by Rev. 01 May 2009 www.acriche .com www.acriche.com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical Data
|
Original
|
PDF
|
X10490
SSC-QP-7-07-24
ntp 3100
ntp 177 750
ntp 177 590
psp 1004
993 395 pnp npn
psp 1003
ED-4701
NOQ code
EIAJ ED-4701 305
SFAF3L
|
Untitled
Abstract: No abstract text available
Text: j (c COPYRIGHT 2000 RELEASED FOR PU0L J CAT ION BY AMP INCORPORATED. 1 3 - Ju n-OQ REV IS IONS LOC E ALL R(GHTS RESERVED. P LTB A D ESCRIPTIO N DATE RELEASED FOR PRODUCTION EBD0-0336-04 B APVD DWN 1 3 - 0 6 - OC AJB F.W-K 06-08-04 WR FW K D 0.7 C B n n s
|
OCR Scan
|
PDF
|
EBD0-0336-04
09MAY94
|
Untitled
Abstract: No abstract text available
Text: K O A X _ S R 7 3 Ilo-ohm n a n k m ^ O l n S°lo, 9 Q ln R Q In 4 « n l a n a M ^ a 4>US#%I# vm 1°lo, 5°lo tolerance thick CSI film KOA SPEER ELECTRONICS, INC. current sense resisto r features • R u 0 2 thick film resistor elem ent • Anti-leaching nickel barrier terminations
|
OCR Scan
|
PDF
|
CeramicMIL-STD-202,
MIL-STD-202,
|
Untitled
Abstract: No abstract text available
Text: ^A TsT ’5 ^ = ' Microelectronics METRAL Right Angle Signal Receptacle Features • Modular without loss of position ■ Available in 12, 24, 48, and 96 mm module sizes ■ Provides 24, 48, 96, and 192 I/Os in 4 x 6, 4 x 12, 4 x 24, and 4 x 48 configurations
|
OCR Scan
|
PDF
|
Recommended106421035
|
ETAD-C0198
Abstract: Henkel
Text: 0 1 : 4 7 :37 c a ro l.trib b le 2010/04/14 A P P LIC A B LE STA N D A RD -25 OPERATING RATING °C TO +85 °C -10 STORAGE TEMPERATURE TEMPERATURE RANGE 3C TO +60 °C RANGE VOLTAGE AC 30 CURRENT V , DC 42 2 V A APPLICABLE CABLE S P E C IF IC A T IO N S ITEM
|
OCR Scan
|
PDF
|
EDC3-116600-00
R30-7PB-12S
CL130-0035-5-00
HC001I-5-3
ETAD-C0198
Henkel
|
I1160
Abstract: 74ACT11160
Text: 74AC/ACT 11160 Signetics Synchronous Presettable Synchronous BCD D ecade Counter; Asynchronous Reset AC11160: Product Specification ACT11160: Objective Specification ACL Products G ENERAL INFORMATION FEATURES • Synchronous counting and loading SYMBOL • Two count enable Inputs for n-bll
|
OCR Scan
|
PDF
|
74AC/ACT
74AC/ACT11160
ACT11160:
74AC/ACT11160
I1160
74ACT11160
|
Newbridge Microsystems
Abstract: No abstract text available
Text: TM C R CA82C84A DECEMBER 1989 L CLOCK GENERATOR AND DRIVER Pin and functional compatibility with the Industry standard 8284/8284A The CA82C84A is a high performance, single chip clock Generates system dock for 80C86/88 microprocessors offering pin-for-pin functional compatibility with the
|
OCR Scan
|
PDF
|
CA82C84A
8284/8284A
80C86/88
8284As
CA82C84A
8284/8284A.
Newbridge Microsystems
|
NEC concurrent rdram
Abstract: concurrent RDRAM 72 NEC Rambus
Text: NEC MOS INTEGRATED CIRCUIT J IP D 4 8 8 1 7 0 18M bit Ram bus DRAM IM w o rd X 9bit x 2bank D e s c rip tio n The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremely-high-speed CMOS DRAM organized a sJM words by 9 bits and capable of bursting up to 256 bytes of data at 2 nanoseconds per byte. The use of Rambus S ig r ilf f llM f t jc
|
OCR Scan
|
PDF
|
18-Megabit
UPD488170
ED-7424)
NEC concurrent rdram
concurrent RDRAM 72
NEC Rambus
|
Untitled
Abstract: No abstract text available
Text: Xgjf PRELIMINARY CY37512V UltraLogic 3.3V 512-Macrocell ISR™ CPLD — tPD = 15 ns Features • 512 macrocells in 32 logic blocks • 3.3V In-System Reprogrammable™ ISR™ — JTAG-compliant on-board programming — Design changes don’t cause pinout changes
|
OCR Scan
|
PDF
|
CY37512V
512-Macrocell
|
SC11362
Abstract: No abstract text available
Text: SC11362 ADPCM Processor SIERRA SEMICONDUCTOR □ C C I T T G.726 co m p atib le at 32, □ □ E a c h ch an n e l in d iv id u a lly 324 co n fig u rab le 2 4,1 6 K b p s A N S I T 1 .301 co m p a tib le at 32 □ □23 3 22 321 A cc o m m o d a te s n- law 7- or
|
OCR Scan
|
PDF
|
SC11362
SC11362CV
11362CN
SC11362
|
wn 5461
Abstract: CM603 110BL
Text: MITSUBISHI LSIs MH8S72BALD-6 •s« ^ 603,979,776-BIT 8,388,608-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH8S72BALD is 8388608 - word x 72-bit Synchronous DRAM module. This consist of nine industry standard 8M x
|
OCR Scan
|
PDF
|
MH8S72BALD-6
776-BIT
608-WQRD
72-BIT
MH8S72BALD
72-bit
MIT-DS-0316-0
11/May.
wn 5461
CM603
110BL
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH32S64PHB-6 •s« ^ 2,147,483,648-BIT 33,554,432-WQRD BY 64-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH32S64PHB is 33554432 - word x 64-bit Synchronous DRAM module. This consist of sixteen industry standard
|
OCR Scan
|
PDF
|
MH32S64PHB-6
648-BIT
432-WQRD
64-BIT
MH32S64PHB
64-bit
133MHz
MIT-DS-0319-0
12/May.
|
HEX-80
Abstract: DQ46A ao9 no3
Text: MITSUBISHI LSIs MH32S72PHB-6 •s« ^ 2,415,919,104-BIT 33,554,432-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH32S72PHB is 33554432 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard
|
OCR Scan
|
PDF
|
MH32S72PHB-6
104-BIT
432-WQRD
72-BIT
MH32S72PHB
72-bit
MH32S72
133MHz
MIT-DS-0318-0
12/May.
HEX-80
DQ46A
ao9 no3
|
|
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH16S72BAMD-6 •s« ^ 1,207,959,552-BIT 16,777,216-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH16S72BAMD is 16777216 - word x 72-bit Synchronous DRAM module. This consist of eighteen
|
OCR Scan
|
PDF
|
MH16S72BAMD-6
552-BIT
216-WQRD
72-BIT
MH16S72BAMD
72-bit
133MHz
MIT-DS-0314-0
10/May.
|
9-12-bit
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH8S64BALD-6 •s« ^ 536,870,912-BIT 8,388,608-WQRD BY 64-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH8S64BALD is 8388608 - word x 64-bit Synchronous DRAM module. This consist of eight industry standard 8M x
|
OCR Scan
|
PDF
|
MH8S64BALD-6
912-BIT
608-WQRD
64-BIT
MH8S64BALD
64-bit
MIT-DS-0317-0
11/May.
9-12-bit
|
gk 5461
Abstract: ao9 no3
Text: MITSUBISHI LSIs MH16S72PHB-6 •s« ^ 1,207,959,552-BIT 16,777,216-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH16S72PHB is 16777216 - word x 72-bit Synchronous DRAM module. This consist of nine industry standard 16M x
|
OCR Scan
|
PDF
|
MH16S72PHB-6
552-BIT
216-WQRD
72-BIT
MH16S72PHB
72-bit
MIT-DS-0320-0
12/May.
gk 5461
ao9 no3
|
PNO43
Abstract: xnnx
Text: MITSUBISHI LSIs MH16S72BCFA-6 •s « ^ 1,207,959,552-BIT 16,777,216-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH16S72BCFA is 16777216 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard
|
OCR Scan
|
PDF
|
MH16S72BCFA-6
552-BIT
216-WQRD
72-BIT
MH16S72BCFA
72-bit
MIT-DS-0310-0
PNO43
xnnx
|
0GIN
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH8S72BCFD-6 •s« ^ 603,979,776-BIT 8,388,608-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH8S72BCFD is 8388608 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard
|
OCR Scan
|
PDF
|
MH8S72BCFD-6
776-BIT
608-WQRD
72-BIT
MH8S72BCFD
72-bit
133MHz
MIT-DS-0312-0
0GIN
|
110BL
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH32S72VJA-6 •s« ^ 2,415,919,104-BIT 33,554,432-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change w ithout notice. DESCRIPTION The MH32S72VJA is 33554432 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard
|
OCR Scan
|
PDF
|
MH32S72VJA-6
104-BIT
432-WQRD
72-BIT
MH32S72VJA
72-bit
MIT-DS-0311-0
110BL
|
Untitled
Abstract: No abstract text available
Text: Embedded Intel486 SX Processor 1.0 INTRODUCTION The embedded Intel486™ SX processor provides high perform ance to 32-bit, embedded applications. Designed for applications that do not need a floating point unit, the processor is ideal for embedded designs running DOS , M icrosoft W indows , O S/2 ,
|
OCR Scan
|
PDF
|
Intel486â
32-bit,
Intel486
Intel386ctional
208-Lead
196-Lead
|
DIP42S
Abstract: LC66304A LC66599 LC66E308 QIP48E rom 512x4 cms ZF1 LC66404 date code Sanyo semiconductor 3113B FLAN Series murata
Text: Ordering num ber:EN3113B CMOS LSI No.3i 13b I LC66304A,66306A,66308A r S A i IÌ Y 4K /6K /8K -B Y TE ROM -CON TAIN ED SIN G LE-C H IP 4-BIT M ICRO CO M PU TER FO R C O N T R O L-O R IE N T ED A P P LIC A T IO N S
|
OCR Scan
|
PDF
|
EN3113B
3113B
LC66304A,
6306A,
6308A
6308A
42-pin
12-bit
DIP42S
LC66304A
LC66599
LC66E308
QIP48E
rom 512x4
cms ZF1
LC66404
date code Sanyo semiconductor 3113B
FLAN Series murata
|
transistor NEC D 882 p circuit diagram
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT 16/8-BIT SINGLE-CHIP MICROCOMPUTER The ¿¿PD784031 is a product of the /¿PD784038 sub-series in the 78K/IV series. It contains various peripheral hardware such as RAM, I/O ports, 8-bit resolution A/D and D/A converters, timers, serial interface, and interrupt
|
OCR Scan
|
PDF
|
16/8-BIT
PD784031
PD784038
78K/IV
PD784035
PD784036.
izPD784038,
784038Y
U11316E
transistor NEC D 882 p circuit diagram
|
KM416S1120D
Abstract: No abstract text available
Text: KM416S1120D CMOS SDRAM 1Mx 16 SDRAM 5 12K X 16bit X 2 Banks Synchronous DRAM LVTTL Revision 1.4 June 1999 Samsung Electronics reserves the right to change products or specification w ithout notice. Rev. 1.4 Jun. 1999 KM416S1120D CMOS SDRAM R evision H istory
|
OCR Scan
|
PDF
|
KM416S1120D
512Kx
16bit
KM416S1120D-7/8
ns/20ns
67ns/68ns
KM416S1120D-6
11CLK)
KM416S1120D
|
