NOR FLASH 1996 PROTECT Search Results
NOR FLASH 1996 PROTECT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650M-F-COVER | Murata Manufacturing Co Ltd | PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical |
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DF3D36FU |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-28 V, SOT-323 (USM), 2 protected lines, AEC-Q101 |
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DF3D29FU |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-24 V, SOT-323 (USM), 2 protected lines, AEC-Q101 |
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DF3D18FU |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-12 V, SOT-323 (USM), 2 protected lines, AEC-Q101 |
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TCKE712BNL |
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eFuse IC (electronic Fuse), 4.4 to 13.2 V, 3.65 A, Latch, Adjustable Over Voltage Protection, WSON10 |
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NOR FLASH 1996 PROTECT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BLH load cell
Abstract: BLH sr-4 mitsubishi 32 pin SOP mitsubishi thyristors mitsubishi ordering information 1. Mobile Computing block diagram BLH load cell controller HN29WB800 HN29WT800 HN29WT800T-8
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HN29WT800 HN29WB800 1048576-Word 524288-word 16-bit ADE-203-537 8-bit/512-kword BLH load cell BLH sr-4 mitsubishi 32 pin SOP mitsubishi thyristors mitsubishi ordering information 1. Mobile Computing block diagram BLH load cell controller HN29WT800T-8 | |
tea1061 application noteContextual Info: Philips Semiconductors Product specification Pulse and DTMF diallers with redial 1 PCD3310; PCD3310A • On-chip voltage reference for supply and temperature independent tone output FEATURES • Pulse, DTMF and ‘mixed mode’ dialling • On-chip filtering for low output distortion |
OCR Scan |
PCD3310; PCD3310A 23-digit iziis45° TEA1060 TEA1061. TEA1060) TEA1061) tea1061 application note | |
BZX79-C12
Abstract: PCD3310T BC547 PCD3310AP MGE490 BST76 transistor DIP20 PCD3310 PCD3310A PCD3310AT
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PCD3310; PCD3310A SCA52 417021/1200/03/pp28 BZX79-C12 PCD3310T BC547 PCD3310AP MGE490 BST76 transistor DIP20 PCD3310 PCD3310A PCD3310AT | |
block diagram of dual 12v power supply
Abstract: MARKING PM5 "NOR Flash" 1996 protect
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MT28SF002 100ns 110ns, 150ns 40-Pin block diagram of dual 12v power supply MARKING PM5 "NOR Flash" 1996 protect | |
keyboard matrix 16*8
Abstract: DIP20 PCD3310 PCD3310A PCD3310AP PCD3310AT PCD3310P PCD3310T S028 pcd3310 application note
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OCR Scan |
PCD3310; PCD3310A keyboard matrix 16*8 DIP20 PCD3310 PCD3310A PCD3310AP PCD3310AT PCD3310P PCD3310T S028 pcd3310 application note | |
azy 25Contextual Info: TMS28F004Axy, TMS28F400Axy 524288 BY 8-BIT/262144 BY 16-BIT AUTOĆSELECT BOOTĆBLOCK FLASH MEMORIES SMJS829A − JANUARY 1996 − REVISED AUGUST 1997 D Organization . . . 524 288 By 8 Bits D D D D D D D D 262 144 By 16 Bits Array-Blocking Architecture − One 16K-Byte Protected Boot Block |
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TMS28F004Axy, TMS28F400Axy 8-BIT/262144 16-BIT SMJS829A 16K-Byte 96K-Byte 128K-Byte 28F400Axy azy 25 | |
Contextual Info: OBSOLETE ADVANCE MT28F160S2 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16, 2 MEG x 8 FLASH MEMORY SMARTVOLTAGE SVT-II , SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB/(32K-word) erase blocks Programmable sector protect |
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MT28F160S2 32K-word) 120ns 100ns, 150ns | |
Contextual Info: ADVANCE MT28F160S2 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16,2 MEG x 8 FLASH MEMORY S m a rtV o lta g e S V T -II , SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB/(32K-word) erase blocks Programmable sector protect |
OCR Scan |
MT28F160S2 32K-word) 120ns 100ns, 150ns 001b47T | |
Contextual Info: PRELIMINARY MT28F004B1 512K x 8 FLASH MEMORY FLASH MEMORY 512K x 8 SMARTVOLTAGE, BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks • Deep Power-Down Mode: 8µA at 5V VCC; 8µA at |
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MT28F004B1 100ns 110ns, 150ns 40-Pin 60ns/90ns 80ns/110ns 100ns/150ns | |
application PAL 16v8
Abstract: bootstraploader
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KitCON-161 D-55129 L-266-01 L-266-01, D-55069 application PAL 16v8 bootstraploader | |
icc17Contextual Info: ADVANCE MT28SF400 256K x 16, 512K x 8 FLASH MEMORY 256K x 16, 512K x 8 FLASH MEMORY SMARTVOLTAGE, BOOT BLOCK FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks |
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MT28SF400 44-Pin 16KB/8K-word 100ns 110ns, 150ns ICC13 ICC17 icc17 | |
MT28F002B1VG-8 BContextual Info: PRELIMINARY MT28F002B1 256K x 8 FLASH MEMORY MICRON U QUANTUM DEVtCEft, INC. FLASH MEMORY 256K x 8 S m artV o ltag e, FEATURES • Five erase blocks: 16KB boot block protected Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8(aA at 5V Vcc; 8|xA at |
OCR Scan |
MT28F002B1 100ns 110ns, 150ns 40-Pin VMT28F002B1 001b34b MT28F002B1VG-8 B | |
Contextual Info: PRELIMINARY MT28F004B1 512K x 8 FLASH MEMORY MICRON U QUANTUM DEVICES, INC. FLASH MEMORY 512K x 8 S m a r tV o lta g e , BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks |
OCR Scan |
MT28F004B1 100ns 110ns, 150ns 40-Pin | |
Contextual Info: ADVANCE MT28F016S2 2 MEG x 8 FLASH MEMORY MICRON • quantumdevices,me. FLASH MEMORY 2 MEG x 8 S m a r tV o lta g e SVT-II , SECTORED ERASE FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10|iA MAX |
OCR Scan |
MT28F016S2 120ns 100ns, 150ns 40-Pin 70ns/80ns MT2BF016S2 001bS4b | |
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Contextual Info: PRELIMINARY MT28F200B1 128K x 16, 256K x 8 FLASH MEMORY FLASH MEMORY 128K x 16, 256K x 8 S mart V o lta g e , FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks |
OCR Scan |
MT28F200B1 16KB/8K-word 100ns 110ns, 150ns | |
L9930
Abstract: L9930PD MULTIWATT11
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L9930 Multiwatt11 PowerSO20 Multiwatt11) L9930PD PowerSO20) L9930 D96AT287 L9930PD MULTIWATT11 | |
Contextual Info: SN54AHC157, SN74AHC157 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS SCLS345I − MAY 1996 − REVISED JULY 2003 D Operating Range 2-V to 5.5-V VCC D Latch-Up Performance Exceeds 250 mA Per D ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model A114-A |
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SN54AHC157, SN74AHC157 SCLS345I SN54AHC157 SN74AHC157 000-V A114-A) A115-A) | |
so24L
Abstract: MC33346 Motorola ic DATA BOOK 751E MC33346DTB MC33346DW
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MC33346 MC33346 MC33346/D* MC33346/D so24L Motorola ic DATA BOOK 751E MC33346DTB MC33346DW | |
kitCON-504
Abstract: 80C504 80C52 SAB-C501 SAB-C504 SAB-C513 A29F040 siemens soft starter
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KitCON-504 D-55129 L-243-01 L-243-01, D-55069 kitCON-504 80C504 80C52 SAB-C501 SAB-C504 SAB-C513 A29F040 siemens soft starter | |
NOR Flash 1996 protectContextual Info: PRELIM IN ARY MT28F002B1 256K x 8 FLASH M EM ORY I^ IC R D N FLASH MEMORY 256K x 8 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|iA at 5V Vcc; 8|a.A at |
OCR Scan |
MT28F002B1 100ns 110ns, 150ns 40-Pin 60ns/90ns s/110ns 100ns/150ns NOR Flash 1996 protect | |
Contextual Info: SN54AHC157, SN74AHC157 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS SCLS345I − MAY 1996 − REVISED JULY 2003 D Operating Range 2-V to 5.5-V VCC D Latch-Up Performance Exceeds 250 mA Per D ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model A114-A |
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SN54AHC157, SN74AHC157 SCLS345I SN54AHC157 SN74AHC157 000-V A114-A) A115-A) | |
Contextual Info: TMS28F002Axy, TMS28F200Axy 262144 BY 8-BU/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES _ SMJS826D - JANUARY 1996 - REVISED SEPTEMBER 1997 • • Organization. 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture - One 16K-Byte Protected Boot Block |
OCR Scan |
TMS28F002Axy, TMS28F200Axy 8-BU/131072 16-BIT SMJS826D 16K-Byte 96K-Byte 128K-Byte 28F200Axy 16-Bit | |
Contextual Info: Ì l i H U S E M I C O N D U C T O R U A R R SP721 I S Electronic Protection Array for ESD and Over-Voltage Protection April 1996 Features Description • ESD Interface Capability for HBM Standards - MIL STD 3015.7 . 15kV |
OCR Scan |
SP721 SP721 1-800-4-HARRIS 00bb2bb | |
G1996Contextual Info: ADVANCE MT28F016S2 |V |IC = R O N 2 MEG x 8 FLASH M E M O R Y 2 MEG x 8 S m a rtV o lta g e SVT-II , SECTORED ERASE FEATURES • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: IOjiA MAX |
OCR Scan |
MT28F016S2 120ns 100ns, 150ns 40-Pin MT28F016S2 MT20FO1SS2 G1996 |