NOV01 Search Results

Contextual Info: REVISIONS REV 18.91 17.91 DATE PROPOSAL ADDING PN CUPPED ON PCB TAIL. CHANGE PACKING QUANTITY._ A 0 .4 2 [.0 1 7 ] [.7 4 5 ] MAX [.7 0 5 ] MIN. ECN. ERN NO. B REV. BY APPRD. NOV01 /1 1 L.CHAN S E P 2 0 /1 2 L.CHAN 1 4 .8 8 [.5 8 6 ] 4 .4 4 5 [.1 7 5 ]

marking cck

Contextual Info: SE2609L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications ƒ ƒ ƒ Product Description The SE2609L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates a power

Contextual Info: n 4 T H I S DRAWING 7 R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . COPYRIGHT BY AMP INCORPORATED. 19 2 3 ,19 LOC A LL R IG H T S R ES E R V E D . AA D IST revision 20 DESCRIPTION LTR D ADDED : - 4 - DWN DATE 08N0V01 P E R EC 0 5 1 5 - 0 0 2 0 - 0 1

JAN02

Contextual Info: A Micro CPC Issued 10/01 DESCRIPTION 1309096 APPLICATIONS • Ideal for Medical, Instrumentation and Industrial applications where size, contact density and durability are primary concerns. The nylon housings offer good resistance to a wide range of chemical agents while the IP65

fast recovery diode 1000v 30A

Abstract: 6RI50E-080M5 ESAL-01-01C 6RI30G-160 2fi300a-060 6RI75G-160B 6RI100G160 2RI250E-060 diode 100a 1000v 6RI75G160B
Contextual Info: DIODE MODULES Quick Selection Guide Nov-01 Comprehensive chart Rated current General use diode modules Repetitive peak reverse voltage VRRM 300V 30A 50A 600V 800V 6RI30E-060 6RI30E-080 6RI50E-060 6RI50E-080 1000V 1200V 1600V 6RI30G-120 6RI30G-160 6RI50E-080B

Contextual Info: シングル N チャンネル MOSFET ELM36402EA-S •概要 ■特長 ELM36402EA-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=6.5A ・ Rds on < 24mΩ (Vgs=4.5V) ・ Rds(on) < 35mΩ (Vgs=2.5V)

Contextual Info: Single N-channel MOSFET ELM36402EA-S •General description ■Features ELM36402EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=6.5A Rds(on) < 24mΩ (Vgs=4.5V) Rds(on) < 35mΩ (Vgs=2.5V)

Contextual Info: 4 T H IS D R A W IN G 2 3 R E L E A S E D FO R P U B L IC A T IO N IS U N P U B L IS H E D . F E B ,1 9 9 5 DIST LOC REVISIONS A L L R IG H T S R E S E R V E D . C O P Y R IG H T 1995 BY TYCO E LE C TR O N IC S C O R P O R A TIO N . LTR D E S C R IP T IO N

170M8637

Abstract: 170M8641 170M8623 170M8626 170M8617 170M8636 170M8640 DK27 zilox 170M8642
Contextual Info: Bussmann Square Body – DIN 43 653 1000V IEC/U.L. Size 3 Rated Voltage 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 900 315-1400A Electrical Characteristics I2t (A2s) Rated Clearing Current at Rated RMS-Amps Pre-arc Voltage 315 350

170m5988

Abstract: 170M5975 zilox 170M5989 170m5990 bussmann semiconductor fuse DIN TYPE bussmann typower bussmann zilox 170m bussmann semiconductor fuse 630 amp 170M5969
Contextual Info: Bussmann Square Body – DIN 43 653 1000V IEC/U.L. Size 2 Rated Voltage 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 250-800A Electrical Characteristics I2t (A2s) Rated Clearing Current at Rated RMS-Amps Pre-arc Voltage 250 315 350 400 450 500

murata ceramic filter e10.7a

Abstract: e10.7a murata filter E10.7A SFE10.7MA21 SFE10,7ma murata filter 20kHZ murata filter ceramic 10.7 murata filter murata filter 10.7 E10,7A
Contextual Info: Add Document Product Specification for Reference Only Issue Date : 7/16/2003 Part Description : Date Format: 5/5/2001 Ceramic Filter Murata Part Number Murata Global Part Number: SFELA10M7DF0021-B0 Murata Previous Part Number: SFE10.7MA21 *Attention: Murata will change to Global Part Numbers in June 2001. Global

p121 smd

Abstract: P1210 P46 SMD XF001 3W27
Contextual Info: 3. E l e c t r i c a l 1. D im e n s i o n s : A •0.68 Max • Isolation Voltage: 500 VAC Pri to Sec for 60 Sec Turns Ratio: 1 0-12:1 -2:1 -3 =1:1:1,266±5% Turns Ratio: (4—6:9-7)=1:2CT±5% 0CL: P12-10 1.5mH Min @100KHz 0.2V OCL: P4-6 1.2mH Min @100KHz Q.2V

ELM36402EA

Contextual Info: 单 N 沟道 MOSFET ELM36402EA-S •概要 ■特点 ELM36402EA-S 是 N 沟道低输入电容，低工作电压， •Vds=20V 低导通电阻的大电流 MOSFET。 ·Id=6.5A ·Rds on < 24mΩ (Vgs=4.5V) ·Rds(on) < 35mΩ (Vgs=2.5V) ■绝对最大额定值

FS1575

Abstract: video sdi splitter
Contextual Info: FS1575 SDI VIDEO SPLITTER The FS1575 provides a low cost solution to splitting a single serial digital video signal between two destinations where ultimate performance can be reduced. It requires no power and only introduces a modest insertion loss. Input/Output Signal Format

210C

Abstract: NOV-01
Contextual Info: AMR AMP FH 0.6 mm Pitch Board-to-Board Connector 114-— 5 2 5 5 2 2 - N O V -01 Rev A M I S ES Scope 1. 1 fa ^ 7 ] ~ • /\^ b • o. 6 1. 1 Contents This specification covers the requirements for mount of 0. 6 mm Pitch Board-to-Board Connector Free Height Type.

7MBR30SA060-50

Abstract: 1200V 2MBI300N-060-04 7mbr35sa 7MBR30SA060 7MBI50N-120 2mbi200n 2MBI150NC-120 2MBI50N-120 2MBI75N-120
Contextual Info: IGBT MODULES Nov-01 Quick Selection Guide IGBT modules N series * Low saturation voltage VCE sat Max. 2.8volts (600volts class), 3.3volts (1200volts class) * High speed switching ton 1.2ms toff 1.0ms tf 0.35ms (600volts class) * Low switching noise ton 1.2ms toff 1.5ms tf 0.5ms (1200volts class)

6mbp50rta060

Abstract: 7mbp50rta060 7MBP50RtA060 01 6mbp20rta060 7MBP150RTA060 6mbp50rta 6MBP150RTA060 6MBP50RA-120 6mbp80rtb060 7MBP75RA120
Contextual Info: IGBT-IPM Quick Selection Guide Nov-01 * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * Compatible with existing IPM-N series package * High performance and higi reliability IGBT with overheating protection

esjc15-10

Abstract: ESJC15 ESJC16-12 ESJC15 -10 ESJC16 ESJA08 ESJC16-09 ESJA08-08 esjc ESJC13-12B
Contextual Info: High voltage diodes Quick Selection Guide Nov-01 Single Package VRRM Io KV 2 2 3 4 5 Lead General purpose type 6 8 9 10 12 14 16 18 20 24 1.0 5.0 5.0 5.0 5.0 5.0 5.0 0.3 0.5 0.5 0.5 0.5 0.5 0.5 ESJA04-[]A ESJA57-[]A ESJA58-[]A ESJA54-[]A ESJA52-[]A ESJA53-[]A

bussmann semiconductor fuse DIN TYPE

Abstract: 170M3989 170M3972 bussmann zilox 170m 170M3991 SEMICONDUCTOR FUSE 1000v, 250a 170M3990 microswitch indicator 170M microswitch bussmann 170M3987
Contextual Info: Bussmann Square Body – DIN 43 653 1000V IEC/U.L. Size 1* Rated Voltage 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 50-400A Electrical Characteristics I2t (A2s) Rated Clearing Current at Rated RMS-Amps Pre-arc Voltage 50 63 80 100 125 160 200

SE2608L

Abstract: QAD-00044 QAD00045
Contextual Info: SE2608L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications ƒ ƒ ƒ Product Description The SE2608L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates a power

74ALVT16245

Abstract: AV16245DL
Contextual Info: Philips Semiconductors Product specification 2.5V/3.3V ALVT 16-bit transceiver 3-State FEATURES 74ALVT16245 • Latch-up protection exceeds 500mA per JEDEC Std 17 • 16-bit bidirectional bus interface • ESD protection exceeds 2000V per MIL STD 883 Method 3015

varistor ENC series

Abstract: ENC471C-14A ENC471D-14A ENC431D-10A ENC201D-14A ENC621D-10A ENC221D-14A ENC241D ENC221D-10A ENE201D-05A
Contextual Info: Fuji Ceramic Surge Absorbers ENC series , ENE series Nov-01 Types and characteristics varistor voltage Maximum rating Peak current Applied voltage 8/20us Amps. 125 Volts ACrms Volts DCrms 22(20 to 24) 27(24 to 30) 33(30 to 36) 39(35 to 43) 47(42 to 52) 56(50 to 62)

KS926S2

Abstract: YG911S2R YG912S6 YG963S6R PG905C4 YG961S6R kp926 CB903-4 ERA91-02 ERB91-02
Contextual Info: Low-loss Fast Recovery Diodes Quick Selection Guide Nov-01 LLD Single Package Lead VRRM Io Volts 200 O O 300 400 500 600 0.5 1.0 1.0 1.0 1.5 3.0 O SC(SMD) K-pack(SMD) K-pack TO-220AB TO-220F15 (Amps.) O O O O O O O O O O O IFSM (Amps.) 10 20 25 25 25 50

170M4983

Abstract: 170M4981 170M4986 bussmann semiconductor fuse DIN TYPE 170M4970 bussmann zilox 170m 170M4980 bussmann semiconductor fuse 630 amp 170M4982 microswitch bussmann
Contextual Info: Bussmann Square Body – DIN 43 653 1000V IEC/U.L. Size 1 Rated Voltage 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 160-630A Electrical Characteristics I2t (A2s) Rated Clearing Current at Rated RMS-Amps Pre-arc Voltage 160 200 250 315 350 400