NP11 Search Results

NEC 110N055

Abstract: 110n055 110n055 NEC nec d 1590 NP110N055PUJ-E1B-AY NP110N055PUJ-E2B-AY NP110N055PUJ MARKING E2B MP-25ZP date code marking NEC
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUJ SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP110N055PUJ-E1B-AY

Contextual Info: Preliminary Data Sheet NP110N055PUK R07DS0591EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

Contextual Info: Preliminary Data Sheet NP110N04PUK R07DS0570EJ0100 Rev.1.00 Nov 17, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

NP111-13302-G4

Abstract: NP111 NP1117
Contextual Info: NP111 Series TH PGA / ZIF Part Number (Details) NP111 – 133 02 – G 4 Specifications Insulation Resistance: 10,000MΩ min. at 500 V DC Withstanding Voltage: 700 V AC for 1 minute Contact Resistance:• 35mΩ max. at 10mA Operating Temperature Range: -55°C ~ +125°C

D16853

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP110N055PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP110N055PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER

82586

Abstract: np112
Contextual Info: NP1122.qxd 2/13/98 4:43 PM Page 1 Scalable Solutions for Evolving Networks Intel responds to the changing network model with products, technologies and industry standards efforts that span from the home to the enterprise NP1122.qxd 2/13/98 4:43 PM Page 2 Scalable Solutions for Evolving Networks

NP110N04PUG

Abstract: D1685 MP-25ZP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP110N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP110N04PUG

NP110N055PUG

Abstract: d16853 D1685 MP-25ZP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP110N055PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP110N055PUG

Contextual Info: Preliminary Data Sheet NP110N055PUK R07DS0591EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

NP110N04PUG

Abstract: MP-25ZP TRANSISTOR 10003
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP110N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP110N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER

NetportExpress

Abstract: intel express 510T switch "print server" 510T NetportExpress PRO/100 express 8100 intel Intel Express Router
Contextual Info: NP1176.qxd 4/10/98 9:03 AM Page 1 Intel Education Solutions Intel Solution Products at the District Level Intel’s combination of networking and management products help you control the network. Your confidential information is transferred through the Internet using Virtual Private Network

NEC 110N04

Abstract: 110N04 NP110N04PUJ 110n04 nec v9500 MP-25ZP NEC TRANSISTOR MARKING CODE MARKING E2B D1973
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PUJ SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP110N04PUJ-E1B-AY

D1685

Abstract: MP-25ZP NP110N03PUG
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N03PUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP110N03PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP110N03PUG

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP110N04PDG

NP111-273K

Abstract: 238 pin PGA socket
Contextual Info: ZIF Sockets for PGA NP111 Series • Outline Dimensions A e SPECIFICATIONS • PGA low profile ZIF socket. • Reliable new design contact. CHARACTERISTICS Insulation Resistance Breakdown Voltage Contact Resistance Operating Temp. Range Acceptable Pin Diameter

CI 4553

Contextual Info: YA MA IC HI E L E C T R O N I C S INC bôE D T Ii4SS3ti ÜQG O SS 1 305 YAMAICHI Z.LF Sockets for PGA NP111/NP210 Series For INTEL 486 OverDrive™ Ready Performance Upgrade Devices and Pentium™ Processor SOCKET 1 Ordering Procedure N P 111 - 169 K 13786

NP110N03PUG

Abstract: MP-25ZP
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP110N03PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP110N03PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER

NEC 110N04

Abstract: 110N04 NP110N04PDG NP110N04PDG-E2-AZ MP-25ZP NP110N04PDG-E1-AZ NEC LOT CODE D1756
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP110N04PDG-E1-AZ

Am79C83

Contextual Info: Am79C83 Fiber Optic Ring Media Access Controller FORMAC Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Implements Media Access Control (MAC) layer protocol for the ANSI X3T9.5 standard (Fiber Distributed Data Interface, FDDI) ■ Error detection capability

CD 2399 GP

Abstract: 80387 DX Users Manual Programmers Reference
Contextual Info: PRByBJOODOÂIfflr in t e i Intel486 DX MICROPROCESSOR 168-Pin Grid Array Package High Performance Design — RISC Integer Core with Frequent Instructions Executing in One Clock — 25 MHz, 33 MHz, and 50 MHz Clock — 80, 106, 160 Mbyte/sec Burst Bus — CHMOS IV and CHMOS V Process

NP0640SAT3G

Abstract: 403C NP0640SBT3G NP0640SCT3G NP0720SAT3G NP0720SBT3G NP0720SCT3G NP0900SAT3G NP0900SBT3G NP1500SC-T3G
Contextual Info: NP Series Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional NP Series Thyristor Surge Protector Devices TSPD protect telecommunication circuits such as central office, access, and customer premises equipment from overvoltage conditions. These are

Contextual Info: NP-SE Series Product Preview 140A, TSPD The NP−SE series of Thyristor Surge Protection Devices TSPD protect sensitive electronic equipment from transient overvoltage conditions. They offer the designer a more robust alternative to the standard 100 A rated devices.

smd code marking NEC

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Contextual Info: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part

Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices Am79C830A FORMAC Plus DISTINCTIVE CHARACTERISTICS • Implements the FDDI Media Access Control MAC layer protocol for ISO standard 9314-2 ■ Pointers to claim and beacon frames ■ Buffer-memory clock frequency range: