tip122 tip127 audio amp
Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power
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MJ3281A
MJ1302A
MJ3281A*
MJ1302A*
204AA
TIP73B
TIP74
TIP74A
TIP74B
TIP75
tip122 tip127 audio amp
BU108
K 3569
D44H1
tip120
MJ1302A equivalent
2SB595
BDX54
BU326
BU100
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NTE269
Abstract: TO202 package NTE268 SILICON COMPLEMENTARY transistors darlington 956b
Text: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require-
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NTE268
NTE269
100MHz
NTE269
TO202 package
NTE268
SILICON COMPLEMENTARY transistors darlington
956b
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sec tip41c
Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power
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MJL3281A
MJL1302A
MJL3281A*
MJL1302A*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
sec tip41c
MJE493
2SC1419
2sc3281
2n3055 audio output circuit
BDW93
MJ1000
BDW83
buv98a cross reference
2SC1943
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MJ11033G
Abstract: MJ11032 MJ11028-29 Transistor MJ11029 MJ11032G MJ11028 TRANSISTOR MJ11028 transistor MJ11032 MJ11030 MJ11029G
Text: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features
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MJ11028,
MJ11030,
MJ11032
MJ11029,
MJ11033
MJ11028/29
MJ11030
MJ11032/33
MJ11033G
MJ11032
MJ11028-29 Transistor
MJ11029
MJ11032G
MJ11028
TRANSISTOR MJ11028
transistor MJ11032
MJ11030
MJ11029G
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MJ11033G
Abstract: MJ11028-29 Transistor transistor mj11028 equivalent 100 amp npn darlington power transistors COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS IC 204 MJ11032 MJ11032G MJ11028 MJ11029
Text: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High−Current Complementary Silicon Power Transistors http://onsemi.com High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier
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MJ11028,
MJ11030,
MJ11032
MJ11029,
MJ11033
MJ11028/D
MJ11033G
MJ11028-29 Transistor
transistor mj11028 equivalent
100 amp npn darlington power transistors
COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS
IC 204
MJ11032
MJ11032G
MJ11028
MJ11029
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Untitled
Abstract: No abstract text available
Text: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors http://onsemi.com High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.
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MJ11028,
MJ11030,
MJ11032
MJ11029,
MJ11033
MJ11028/D
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MJ11033G
Abstract: MJ11032 transistor mj11028 equivalent MJ11032G transistor mj11032 equivalent MJ11028-29 Transistor MJ11028 MJ11029 MJ11030 MJ11028G
Text: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors http://onsemi.com High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.
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MJ11028,
MJ11030,
MJ11032
MJ11029,
MJ11033
MJ11028/29
MJ11030
MJ11032/33
MJ11028/D
MJ11033G
MJ11032
transistor mj11028 equivalent
MJ11032G
transistor mj11032 equivalent
MJ11028-29 Transistor
MJ11028
MJ11029
MJ11030
MJ11028G
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nte268
Abstract: No abstract text available
Text: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.
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NTE268
NTE269
NTE268
NTE269
100MHz
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darlington complementary power amplifier
Abstract: PNP Relay Driver SILICON COMPLEMENTARY transistors darlington nte269 TO202 package NTE268 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS current amplifier note darlington
Text: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.
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NTE268
NTE269
100MHz
darlington complementary power amplifier
PNP Relay Driver
SILICON COMPLEMENTARY transistors darlington
nte269
TO202 package
NTE268
COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS
current amplifier note darlington
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BDV64B
Abstract: BDV65B bdv64b transistor
Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS
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BDV65B
BDV64B
r14525
BDV65B/D
BDV64B
BDV65B
bdv64b transistor
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BDV64B
Abstract: BDV65B bdv64b transistor
Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS
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BDV65B
BDV64B
r14525
BDV65B/D
BDV64B
BDV65B
bdv64b transistor
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS
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BDV65B
BDV64B
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BDV64B
Abstract: BDV65B
Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • w DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS
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BDV65B
BDV64B
BDV65B/D
BDV64B
BDV65B
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4422 datasheet
Abstract: ic 701 BDV64B BDV65B
Text: NPN Complementary Silicon Plastic Power Darlingtons BDV65B PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60–80–100–120 VOLTS
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BDV65B
BDV64B
r14525
BDV65B/D
4422 datasheet
ic 701
BDV64B
BDV65B
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TIP147T
Abstract: TIP142T
Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ ■ STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN APPLICATIONS GENERAL PURPOSE SWITCHING
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TIP142T
TIP147T
TIP142T
O-220
TIP147T.
O-220
TIP147T
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TIP147T
Abstract: TIP142T IP142T
Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN APPLICATIONS ■ GENERAL PURPOSE SWITCHING
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TIP142T
TIP147T
O-220
TIP142T
O-220
TIP147T.
IP142T
IP147T
TIP147T
IP142T
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mje271
Abstract: No abstract text available
Text: ON Semiconductor NPN Complementary Silicon Power Transistors MJE270 PNP MJE271 . . . designed specifically for use with the MC3419 Solid−State Subscriber Loop Interface Circuit SLIC). • High Safe Operating Area • • 2.0 AMPERE COMPLEMENTARY POWER DARLINGTON
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MC3419
MJE270
MJE271
O-126
MJE270/MJE271
mje271
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MJE271
Abstract: to126 case mje270 datasheet MC3419 MJE270
Text: ON Semiconductort NPN Complementary Silicon Power Transistors MJE270 PNP MJE271 . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit SLIC . • High Safe Operating Area • • 2.0 AMPERE COMPLEMENTARY POWER DARLINGTON
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MJE270
MJE271
MC3419
r14525
MJE270/D
MJE271
to126 case
mje270 datasheet
MJE270
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MC3419
Abstract: MJE270 MJE271
Text: ON Semiconductor NPN Complementary Silicon Power Transistors MJE270 PNP MJE271 . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit SLIC). • High Safe Operating Area • • 2.0 AMPERE COMPLEMENTARY POWER DARLINGTON
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MJE270
MJE271
MC3419
r14525
MJE270/D
MJE270
MJE271
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BU326
Abstract: BU108 transistor BU 110 BDX54 2SC1943 2SD80 MJ15021 "cross reference" MJE2482 2SD675 2N3055A 2n3055
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ15015, MJ15016 See 2N3055A Advance Information NPN MJ15018 Complementary Silicon Power Transistors MJ15020* PNP MJ15019 . . . designed for use as high frequency drivers in Audio Amplifiers. • High Gain Complementary Silicon Power Transistors
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MJ15015,
MJ15016
2N3055A)
MJ15018
MJ15020*
MJ15019
MJ15021*
TIP73B
TIP74
TIP74A
BU326
BU108
transistor BU 110
BDX54
2SC1943
2SD80
MJ15021 "cross reference"
MJE2482
2SD675
2N3055A 2n3055
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TIP147T
Abstract: Ic 551 G circuit l5 transistor PNP TIP142T P011C
Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN 3 APPLICATIONS ■ GENERAL PURPOSE SWITCHING
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TIP142T
TIP147T
O-220
TIP142T
O-220
TIP147T.
TIP147T
Ic 551 G circuit
l5 transistor PNP
P011C
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Untitled
Abstract: No abstract text available
Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . STM PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . LOW VOLTAGE . HIGH CURRENT . HIGH GAIN APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION
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TIP142T
TIP147T
TIP142T
O-220
TIP147T.
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P142T
Abstract: transistor B 764 TIP147T
Text: u n SGS-THOMSON iLi îi iO©i T1P142T TÏP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES • MONOLITHIC DARLINGTON CONFIGURATION . LOW VOLTAGE . HIGH CURRENT . HIGH GAIN APPLICATIONS
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P142T
P147T
TIP142T
O-220
TIP147T.
O-220
TIP147T
transistor B 764
TIP147T
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BDW83C
Abstract: darlington bdw84c BDW84C
Text: Üji SCS-THOMSON itLd TTl^@ aD©S BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE ■ COMPLEMENTARY PNP - NPN DEVICES . HIGH CURRENT CAPABILITY . FAST SWITCHING SPEED . HIGH DC CURRENT GAIN
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BDW83C
BDW84C
O-218
BDW84C.
O-218
darlington bdw84c
BDW84C
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