NPN/TRANSISTOR BI 237 Search Results

NPN/TRANSISTOR BI 237 Result Highlights (5)

Part	Manufacturer	Description
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

NPN/TRANSISTOR BI 237 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: r z 7 S C S - T H O M S O N ^ 7# ¡MH Bi^ i[LiiS7[^©lMll0 i _ M J E 1 3 0 0 5 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec T0-220 plastic package	OCR Scan	MJE13005 T0-220	PDF
TRANSISTOR BI 237 Abstract: NPN/TRANSISTOR BI 237 Contextual Info: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for	OCR Scan	2SD1766 OT-89, SC-62) 2SD1766; 2SB1188 max70 2SD1766 TRANSISTOR BI 237 NPN/TRANSISTOR BI 237	PDF
Contextual Info: S G S - T H O M S O N R ïinsœ iiLieî^ûinsi BUF410A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY • VERY HIGH SWITCHING SPEED . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . LOW BASE-DRIVE REQUIREMENTS	OCR Scan	BUF410A BUF410A O-218 OT-93)	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF
NPN DARLINGTON POWER MODULE Abstract: SGS50DA SGS50DA080D SGS50D Contextual Info: 30E D m 7^2^237 DD30b7S r r z SGS-THOMSON “ 7# s 6 « lim iO T « ! s^T hom son fi m S G S 5 0 D A 080D ’ NPN DARLINGTON POWER MODULE « POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING	OCR Scan	DD30b7S O-240) PC-029« NPN DARLINGTON POWER MODULE SGS50DA SGS50DA080D SGS50D	PDF
RELE 12V 5 pines Abstract: BC pnp 200mA TRANSISTOR BI 237 VP0300B equivalent 80 amp 30v npn darlington IRF9513 equivalent lm324 4mA to 20mA transmitter VP0300M equivalent st 555C ZVP1304A Contextual Info: XTR110 B U R R -B R O W N « 1 XTR110 M * i FEATURES A P P L IC A T IO N S • 4mA TO 20mA TRANSMITTER • INDUSTRIAL PROCESS CONTROL • PRESSURE/TEMPERATURE TRANSMITTERS • SELECTABLE INPUT/OUTPUT RANGES: 0V to +5V, 0V to +10V Inputs 0mA to 20mA. 5mA to 25mA Outputs	OCR Scan	XTR110 XTR110 RELE 12V 5 pines BC pnp 200mA TRANSISTOR BI 237 VP0300B equivalent 80 amp 30v npn darlington IRF9513 equivalent lm324 4mA to 20mA transmitter VP0300M equivalent st 555C ZVP1304A	PDF
TRANSISTOR BI 237 Abstract: NPN/TRANSISTOR BI 237 Contextual Info: SGSF464 SGSIF464 SGS-THOMSON MDiSæilLICTI^^WlDIgi HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES . HIGH VOLTAGE CAPABILITY . VERY HIGH SWITCHING SPEED • LOW BASE-DRIVE REQUIREMENTS . U.L. RECOGNISED ISOWATT218 PACKAGE	OCR Scan	SGSF464 SGSIF464 ISOWATT218 E81734 SGSF464 SGSIF464 mon/SGSIF464 IS0WATT218 TRANSISTOR BI 237 NPN/TRANSISTOR BI 237	PDF
STF6045AV Abstract: ibm t40 20MS etd 41 Contextual Info: f Z 7 SGS-THOMSON ^7# Kin gl3@lllLI(gTI3 «Sl STF6045AV NPN DARLINGTON POWER MODULE . . . . EASY TO DRIVE TECHNOLOGY (ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE (2500V RMS) . EASY TO MOUNT	OCR Scan	STF6045AV GG7272Ã STF6045AV ibm t40 20MS etd 41	PDF
ESM2012DV Contextual Info: 3QE D • 7 ^2 3 7 GG3DM2D 3 SGS-THOMSON S ESM2012DF ESM2012DV G S - THOMS ON " y / 3 3 ./a, 5 " NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE	OCR Scan	ESM2012DF ESM2012DV ESM2012DV ESM2012DF T-91-20 O-240) PC-029«	PDF
Contextual Info: b u r r - brown corp HE ] I 1? 313Li5 0014057 1 \| T O H I-i \ XTR110 B U R R -B R O W N a 1 XTR110 [ APPLICATIO N S • 4mA TO 20mA TRANSMITTER • SELECTABLE INPUT/OUTPUT RANGES: OV to + 5 V , OV to + 1 0 V Inputs OmA to 20mA, 5mA to 25mA Outputs Other Ranges	OCR Scan	313Li5 XTR110 10-Iu	PDF
BUL48 Contextual Info: S * 5 G S - T H O M S O N ¡^ O T e « S 7 B U L48 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSW ITCHING TRAN SISTO R . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS • MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS	OCR Scan	BUL48 BUL48 O-220 gc25780 712T237	PDF
BUF410 Abstract: BUF410FI transistor DA 218 Contextual Info: rz T S G S - T H O M S O N R f ln e ^ o a iû T iO iD e i B U F 4 1 0 /4 1 0 F I HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • SGS-THOMSON PREFERRED SA LESTYPES . HIGH VOLTAGE CAPABILITY . VERY HIGH SWITCHING SPEED ■ MINIMUM LOT-TO-LOT SPREAD FOR	OCR Scan	BUF410/410FI ISOWATT218 E81734 BUF410 BUF410FI BUF410/BUF410FI transistor DA 218	PDF
transistor t2a 82 Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors Contextual Info: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:	OCR Scan	T-33-/3 T0126 15A3DIN transistor t2a 82 transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors	PDF
LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original		PDF

TRANSISTOR BI 187 Abstract: BUT230F BUT23 transistor bI 240 Contextual Info: 3GE S C [ * [ œ S - T H O D • M S O & J IF i Q M 7T2T537 W © S s 00303ÔM 6 3 ■ s -T H O M S Q N ' " P ’W i S 3 U T 2 3 0 F B U T 2 3 0 V NPN TRANSISTOR POWER MODULE ■ HIGH C U RR ENT PO W ER BIPOLAR MODULE ■ VE R Y LOW Rth JUNCTION CASE ■ SPECIFIED	OCR Scan	7T2T537 BUT230V BUT230F O-240) PC-029« TRANSISTOR BI 187 BUT230F BUT23 transistor bI 240	PDF
transistor 1248 Abstract: buf832 Contextual Info: 30E D SGS-THOMSON 7 ^ 5 3 7 S ÜQ3D37G G s-thom son m 3 3UF832F BUF832V •'P S fc -lS NPN TRANSISTOR POWER MODULE ADVANCE DATA . . • ■ ■ HIGH VOLTAGE, HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE ISOLATED CASE 2500V RMS EASY TO MOUNT	OCR Scan	Q3D37G 3UF832F BUF832V BUF832V BUF832F i2T237 O-240) PC-029« transistor 1248 buf832	PDF
polysilicon resistor Abstract: cd22 CD34 CD56 CD77 polysilicon resistor fabrication transistor arrays 5v J553S Contextual Info: calDICE Dielectrically-Isolated, Linear,; Bipolar Semi-Custom Arrays CD22/./CD911 Preliminary DESCRIPTION FEATURES CalDICE are CALOGIC’s family of semi-custom arrays featuring Dielectrically-Isolated Complementary Electronics. CalDICE are fabricated using a 90V, complementary bipolar	OCR Scan	CD22/. /CD911 CD911, ia443EE polysilicon resistor cd22 CD34 CD56 CD77 polysilicon resistor fabrication transistor arrays 5v J553S	PDF
ST 9427 Abstract: 155-0241 155-0241-02 M726* TRANSISTOR st 9635 1550371 74935 M605030 806-0300 transistor 9427 Contextual Info: December 1997 RR-B2A High-Frequency Bipolar Products Reliability Report This report presents the product reliability data for Maxim’s High-Frequency Bipolar analog and digital products. This data was collected from extensive reliability stress tests performed between June 1, 1994 and	Original	12GHz 27GHz ST 9427 155-0241 155-0241-02 M726* TRANSISTOR st 9635 1550371 74935 M605030 806-0300 transistor 9427	PDF
buh713 Abstract: GC328 121-237 CW2015 Contextual Info: rZ 7 SGS-THOMSON ^ 7# [M œ m iO T * ® BUH713 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE# E817 3 4 (N APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR	OCR Scan	BUH713 ISOWATT218 E81734 BUH713 SC03DBI GC328 121-237 CW2015	PDF
gc153 Abstract: welding rectifier schematic BUF460F BUF460V Contextual Info: 3 QE r= Z ^ 7# t> m 7 ^ 2 3 7 S G S -T H O M S O N g q 3 G3 s d a * 6 S TH<>BS0N 3 U F 4 6 0 F B U F4 6 0 V '~ P 3 > '3 r i5 • NPN TRANSISTOR POWER MODULE ■ . « ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE	OCR Scan	G03D35D uF460F BUF460V BUF460F T-91-20 O-240) gc153 welding rectifier schematic BUF460F	PDF
S-40T Abstract: SGS40TA045 SGS40 Contextual Info: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING	OCR Scan	SC04520 O-240) PC-029« S-40T SGS40TA045 SGS40	PDF
SGS30DA060 Abstract: SGS30DA060D Contextual Info: 3QE D • 7 ^ 2 3 7 QG30bb0 1 ■ '’ ~ P 3 V ? * 5 ' rZZ SCS-THOMSON ^ 7 # s 6 ^ _ S G S 3 0 D A 0 60D c s m ’T j o m s o n NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS ■ LOW Rih JUNCTION TO CASE ■ FREEWHEELING DIODE	OCR Scan	QG30bb0 O-240) PC-029« SGS30DA060 SGS30DA060D	PDF
BUH715 Contextual Info: £ j ï SGS-THOMSON IILICTIiWIOlêS BUH715 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY • U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E 8 1 734 (N APPLICATIONS: . HORIZONTAL DEFLECTION FOR	OCR Scan	BUH715 ISOWATT218 E81734 BUH715 P025C	PDF
74xx76 Abstract: TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32 Contextual Info: Electronics Workbench TM Multisim 8 Simulation and Capture TM Component Reference Guide TitleShort-Hidden cross reference text May 2005 371587A-01 Support Worldwide Technical Support and Product Information ni.com National Instruments Corporate Headquarters	Original	71587A-01 74xx76 TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32	PDF

NPN/TRANSISTOR BI 237 Search Results

NPN/TRANSISTOR BI 237 Result Highlights (5)

NPN/TRANSISTOR BI 237 Datasheets Context Search

TRANSISTOR BI 237

aeg diode Si 61 L

NPN DARLINGTON POWER MODULE

RELE 12V 5 pines

TRANSISTOR BI 237

STF6045AV

ESM2012DV

BUL48

BUF410

transistor t2a 82

LE79Q2281

TRANSISTOR BI 187

transistor 1248

polysilicon resistor

ST 9427

buh713

gc153

S-40T

SGS30DA060

BUH715

74xx76