NPN 10A 800V Search Results

NPN 10A 800V Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
2SC5200	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)

NPN 10A 800V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sc3090 Abstract: npn 10a 800v 10A Switching Regulator Contextual Info: SavantIC Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO 800V ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·500V/10A Switching Regulator Applications	Original	2SC3090 00V/10A 2sc3090 npn 10a 800v 10A Switching Regulator	PDF
2SC3090 Abstract: 2SC309 npn 10a 800v 10A Switching Regulator Contextual Info: JMnic Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage VCBO≥800V ・Fast switching speed ・Wide ASO（Safe Operating Area） APPLICATIONS ・500V/10A Switching Regulator Applications	Original	2SC3090 VCBO800V) 00V/10A 2SC3090 2SC309 npn 10a 800v 10A Switching Regulator	PDF
npn 10a 800v Abstract: 2SC3090 Contextual Info: Inchange Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage VCBO≥800V ・Fast switching speed ・Wide ASO（Safe Operating Area） APPLICATIONS ・500V/10A Switching Regulator Applications	Original	2SC3090 VCBO800V) 00V/10A npn 10a 800v 2SC3090	PDF
2SC3090 Abstract: ITR05351 ITR05352 ITR05353 ITR05354 ITR05355 Contextual Info: Ordering number:EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3090] 15.6	Original	EN1013C 2SC3090 00V/10A VCBO800V) 2SC3090] 2SC3090 ITR05351 ITR05352 ITR05353 ITR05354 ITR05355	PDF
Contextual Info: Ordering number:ENN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3090] 15.6	Original	ENN1013C 2SC3090 00V/10A VCBO800V) 2SC3090] PW300 cycle10%	PDF
EN1013C Abstract: 2SC3090 Contextual Info: Ordering number:EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · Fast switching speed. · Wide ASO. unit:mm 2022 [2SC3090] E : Emitter	Original	EN1013C 2SC3090 00V/10A VCBO800V) 2SC3090] PW300 EN1013C 2SC3090	PDF
BUX80 Abstract: npn 10a 800v 1N5802 npn transistors 400V low power Contextual Info: BUX80 POWER TRANSISTORS 10A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • • • • These high voltage triple diffused glass passivated power transistors combine fast switching, low saturation voltage and rugged E s/b capability. They are designed for use in	OCR Scan	BUX80 500nS 250iiS; 50//S; BUX80 npn 10a 800v 1N5802 npn transistors 400V low power	PDF
T10H 250V Abstract: 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933 Contextual Info: BUX82 POWER TRANSISTORS 6A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • Collector-Base Voltage: up to 800V • Peak Collector Current: 10A • On Time: < 500nS @ 2.5A These high voltage glass passivated power tra n sisto rs c o m b in e fa s t sw itching, low	OCR Scan	BUX82 500nS 180/tH 500kHz 1N5820 T10H 250V 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933	PDF
222A Transistor Abstract: 222A 22a ic npn 10a 800v BU4530AW transistor 800V 1A NPN Transistor 1500V Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4530AW DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color	Original	BU4530AW 100mA; 222A Transistor 222A 22a ic npn 10a 800v BU4530AW transistor 800V 1A NPN Transistor 1500V	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN	PDF
Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications	Original	KSC5302DM O-126 KSC5302DMTU KSC5302DMSTU KSC5302DM	PDF
Diode GP 514 Abstract: pnp 500v KA9282B DARLINGTON 1A 60V npn to92 2N3904TA DARLINGTON 3A 100V npn to92 8A SOT23 SOT23 NPN KA9220B diode 60V 8A Contextual Info: PRODUCT GUIDE PART NO. 2N3904TA/3904 2N3906/3906AT 2N4400/4401 2N4402/4403 2N6515 2N6517 2N652Q KSP05/06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP55 KSP92 KST06TF KST10TF KST14TF KST2222ATF KST2907ATF KST3904TF KST3906TF KST42TF KST4401TF KST4403TF	OCR Scan	2N3904TA/3904 2N3906/3906AT 2N4400/4401 2N4402/4403 2N6515 2N6517 2N652Q KSP05/06 KSP10 KSP13 Diode GP 514 pnp 500v KA9282B DARLINGTON 1A 60V npn to92 2N3904TA DARLINGTON 3A 100V npn to92 8A SOT23 SOT23 NPN KA9220B diode 60V 8A	PDF
KSC5302D Contextual Info: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time	Original	KSC5302D O-220 KSC5302DTU KSC5302D	PDF

npn 10a 800v Abstract: 2SC3949 2SC394 npn vce 850 transistors Contextual Info: JMnic Product Specification 2SC3949 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed APPLICATIONS ・For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter	Original	2SC3949 npn 10a 800v 2SC3949 2SC394 npn vce 850 transistors	PDF
2SC3993 Contextual Info: Ordering number:EN2236D NPN Triple Diffused Planar Silicon Transistor 2SC3993 800V/16A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.	Original	EN2236D 2SC3993 00V/16A 2048B 2SC3993] 2SC3993	PDF
npn 10a 800v Abstract: 2SC3949 Contextual Info: Inchange Semiconductor Product Specification 2SC3949 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed APPLICATIONS ・For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector	Original	2SC3949 npn 10a 800v 2SC3949	PDF
NTE386 Abstract: npn 10a 800v Contextual Info: NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited	Original	NTE386 NTE386 300ms, npn 10a 800v	PDF
LB-008 Abstract: lc08a LB 125 transistor Triple Diffused Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	OCR Scan	KSC5338D/KSC5338DW O-220 LB-008 lc08a LB 125 transistor Triple Diffused	PDF
Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	OCR Scan	KSC5338D/KSC5338DW O-220 T0-220 C35siÃ	PDF
triacs bt 804 600v Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor	OCR Scan	Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier	PDF
NTE2584 Abstract: npn 10a 800v Contextual Info: NTE2584 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V	Original	NTE2584 NTE2584 npn 10a 800v	PDF
NB 20 transistor Abstract: 250V transistor npn 2a 300V transistor npn 2a npn 10a 800v KSC5338D Contextual Info: KSC5338D NPN SILICON TRANSISTOR TO-220 z z z z HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION Wide S.O.A. Built-in Free-wheel Diode Suitable for ballast App;ication Low Variable Storage-time spread ABSOLUTE MIXIMUM RATING Characteristic Collector Base Voltage	Original	KSC5338D O-220 NB 20 transistor 250V transistor npn 2a 300V transistor npn 2a npn 10a 800v KSC5338D	PDF
RVEFB340150 Contextual Info: Motor Controllers Variable Frequency AC Drives Type VariFlex2 RVEF • AC variable speed drive for use with AC induction motors • Sensorless vector control or V/F mode, high starting torque • Input voltage ranges: 1-ph 110VAC, 1- ph 230VAC, 3-ph 230VAC, 3-ph 480VAC	Original	110VAC, 230VAC, 480VAC RS232 RS485 FB120220 RVEFB120150F* RVEFB120220F* RVEFB320150 RVEFB340150	PDF

NPN 10A 800V Search Results

NPN 10A 800V Result Highlights (5)

NPN 10A 800V Datasheets Context Search

2sc3090

2SC3090

npn 10a 800v

2SC3090

EN1013C

BUX80

T10H 250V

222A Transistor

aeg diode Si 61 L

Diode 400V 5A

Diode GP 514

KSC5302D

npn 10a 800v

2SC3993

npn 10a 800v

NTE386

LB-008

triacs bt 804 600v

NTE2584

NB 20 transistor

RVEFB340150