NPN 1147 Search Results

Contextual Info: Doc No. TT4-EA-11477 Revision. 3 Product Standards Transistors with Built-in Resistor DRC5114E0L DRC5114E0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA5114E DRC2114E in SMini3 type package 2.0 0.3 0.13 3 • Features

Contextual Info: Doc No. TT4-EA-11478 Revision. 3 Product Standards Transistors with Built-in Resistor DRC5143Z0L DRC5143Z0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA5143Z DRC2143Z in SMini3 type package 2.0 0.3 0.13 3 • Features

Contextual Info: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

RENESAS marking code package

Abstract: 2SB1001 2SD1367 2SD1367BCTR-E
Contextual Info: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

2SB1001

Abstract: 2SD1367 2SD1367BCTR-E UPAK Marking BC
Contextual Info: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

Contextual Info: Doc No. TT4-EA-11472 Revision. 3 Product Standards Transistors with Built-in Resistor DRC2113Z0L DRC2113Z0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA2113Z 2.9 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat

2SB1001

Abstract: 2SD1367 DSA003638
Contextual Info: 2SD1367 Silicon NPN Epitaxial ADE-208-1147 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW

Contextual Info: SIEMENS BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F=2.1dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

2SC3884A

Abstract: 2SK528
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. HIGH SPEED SWITCHING REGULATOR OUTPUT APPLICATIONS. . High Voltage : 1500V . High Speed Switching Resistive Load tf=0. l(Js(Typ.) . Collector Metal is Fully Covered with Mold Resin.

A8A Transistor

Abstract: SOT-23 marking a8x transistor A8J SOT-23 A8A A8A Transistor sot23
Contextual Info: MMUN2211LT1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

philips 4859

Contextual Info: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency

Optocoupler IC MCT2E

Abstract: MCT2E equivalent optocoupler mct2e ic MCT2e
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT2E PACKAGE DIMENSIONS t 6.86 DESCRIPTION The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. r* 6.35 O I W W L-w FEATURES A APPLICATIONS 8.89

transistor bt 808

Abstract: d 5072 transistor bt 7377 2521a S51-P TRANSISTOR BD 689 transistor Bf 908 SOT23 752 philips 4859 Transistor MJE 5331
Contextual Info: • bbS3131 00B5211 D15 H A P X Philips Semiconductors N AMER Product specification PHILIPS/DISCRETE b ?E D NPN 9 GHz wideband transistor FEATURES BFR505 e PINNING • High power gain PIN • Low noise figure 2 DESCRIPTION 1 Code: N30 • High transition frequency

temperature controller CHB 401

Abstract: C3604B PSE54-R06 ISE40 c3604BD SMC zse40 ZSE40 C3604bd datasheet A6063S washing machine control panel circuit diagram
Contextual Info: PSE Series 2/23/99 2:19 PM Page 7 ∗∗ Controller Series PSE100 How to Order PSE10 Option Output specifications NPN output 1 PNP output — Without cover C With cover Mounting A B ∗Refer to p.3.1-14 for DIN rail part number. Controller Specifications PSE100-„

Contextual Info: SIEMENS PN P Silicon A F and Sw itching Tran sisto rs • • • • B C X 42 B S S 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel)

CASE353-01

Contextual Info: It » e | b3t7 S S 4 DOfiDTìS 7 | 6 3 6 7 2 54 MOTOROLA SC CXSTRS/R F . 96D 8 0 9 9 5 T - J? -ÌS MJ10041 MJ10044 MJ10047 MOTOROLA SEMICONDUCTOR TECHNICAL DATA s^ sa^ Jesig n er’s D a ta Sh eet xisn - 25, 50, and 100 AMPERE NPN SILICON POWER DARLINGTON

D44C5

Abstract: ge d45c8 GE D44C9 D44C6 D44C3 TL3019 D44* general electric npn to-220 D44C4 d44c9 D44* npn
Contextual Info: S IL IC O N POWER T R A N S IS T O R S COMPLEMENTARY - 4 AMPERES G E Type NPN PNP D44C1 - - D44C3 311.0 V CEO Min. V 30 •c Cont. (A) @ IV , ¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 10 30.0 - 30 -¿.0 25 _ 30.0 30 4.0 40 120 71) D45C2 30.0

NPN 1147

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 U nit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. H A M M E R D RIV E , PULSE M O T O R D R IV E A P P L IC A T IO N S. • • • High DC Current Gain : hpE = 2000 Min. (V c e = 3 V , I = 3A) Low Saturation Voltage : V q e (sat) = 1-5V (Max.) (Ic = 3A)

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

transistor 1201 1203 1205

Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
Contextual Info: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).

PCF7952

Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.

2N6121

Contextual Info: • 7^E^S37 □ D S ci 3 ô ci fi ■ 3 3 H \ f Z 7 SGS-THOMSON 2N6121/22/23 ^ 7 # IM@[M [i[L[i@¥E»nûS_ 2N6124/25/26 S G S - THOMS ON 3 PE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N6121, 2N6122 and 2N6123 are silicon epi­