NPN 2SC372 Search Results

3722K

Contextual Info: K "7 > y $ / T ransistors 2SC3722K 2SC 3722K I k°$ * '> 5 K NPN BW EßH /High Voltage Low Freq. Low Noise Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor h y 1 ¡ s w a t 5* 2) * V c i eo = 1 2 0V ) •(N F=0.2dB Typ.) 1.9 C.950.95 3) 2SA1455K

2SC3725

Contextual Info: SavantIC Semiconductor Product Specification 2SC3725 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters

2SC3723

Contextual Info: SavantIC Semiconductor Product Specification 2SC3723 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters

2SC3725

Abstract: ultrasonic IC
Contextual Info: Inchange Semiconductor Product Specification 2SC3725 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters

2SC3723

Contextual Info: Inchange Semiconductor Product Specification 2SC3723 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters

2SC3725

Contextual Info: JMnic Product Specification 2SC3725 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers

2SC3723

Contextual Info: JMnic Product Specification 2SC3723 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers

ET-191

Contextual Info: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*

Contextual Info: Product Specification 2SC3720 Silicon NPN Power Transistor DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection

diode marking YG

Abstract: 2SC3728 MITSUBISHI LOT NO transistor cr marking
Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3728 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3728 Is a silicon N PN epitaxial type transistor.There is a built-in zener diode between collector to emitter.

2sc4977

Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
Contextual Info: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549

Contextual Info: 2SC3725 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SC3722

Contextual Info: h "7 > v 7»$ /Transistors • m W m Epitaxial Planar NPN Silicon Transistor S W S ftS a & fiS i^ fillg ffl/H ig h Voltage Low Freq. Low Noise Amp. • • & £ 1 a 2SC3722K I H E Dimensions Unit : mm) - (V ce o = 120V) 2) f i 3 8 ^ T '* - 5 : (N F =0.2dB Typ.)

2SC2240BL

Abstract: KT630A BF140 2SC2240GR TMPT1653N4 KT630B 2SC1841 2SC1940 2SC2240-GR 2SC2389
Contextual Info: LOW•POWER SILICON NPN Item Number Part Number 10 -15 20 25 30 BFY41 BFR21 KT630A BF156 SE7002 SE7002 MPS-LOl MPSLOl BSY79 2S0668 -2S0669 2SCB17 2SCB17 2N1445 KT630B HSE419 2SC1622A 2SC1622A 2SC2235 2SC1841 2SC28810 2SC4102 2SC1940 2SC1940 2SC1S41P 2SC1841P

BC547BP

Abstract: BC147B tbc547b BC407A BC407B 2SC372GT BC547AP BC850BR BC550BP TBC547
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 >= BC407A BC547A BC547AP BC847AR TBC547A BCW47B BC147B BC147B BC147B BC407B 20 BC547BP BC550BP BC847BR BC847BR BC847BR BC850BR BC850BR BC850BR Phi~sElec ITT emilntr AmperexElec ~g~:~ 25 30 ~mperext;lec

2SA1455K

Abstract: 2SC3722K T146 T147 VCEO120V
Contextual Info: S "7 > y 7, $ / ’Transistors W W W 2SC3722K # E pitaxial P lanar NPN S ilico n T ransistor iS W f f f ie ^ « a i^ i i« f f l/ H ig h V oltage Low Freq. Low N oise Am p. • £W2-+5£|§|/Dimensions Unit: mm 1 ) * » E T '* 5 : (VC e o = 1 2 0 V ) 2) 1BM&T& * : (NF=0.2dB Typ.)

2sc945l

Abstract: NEC 2SC945 SOT-23 2SC2785H 2SC372G-TM-Y 2SC372GTM-Y 2SC2785F A9 SOT-23 2SC945Q 2SC3622AL 2SC2785K
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 .65 70 200M 200M 200M 200M 200M 200M 200M 200M 200M 200M ~anyo ~Iect 2SC3331T 2SC3330U 2SC3331U 2SC2320L 2SC3330V 2SC3689 2SC3820 2SC3615M 2SC3615L Sanyo Elect Sanyo Elect Sanyo Elect

transistor 2sc124

Abstract: transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 BC 9014 2SC124 9014 Transistor BC 547 transistor
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC15-0 HN / BC 548 / 9014 2SC166 HN / BC 548 / 9014 2SC376 HN / BC 546 / 9014 2SC15-1 HN / BC 546 / 9014

2SC3033

Abstract: Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191
Contextual Info: COLL MER SEMICONDUCTOR INC MAE D • 22367=12 OüDlSflQ SOI « C O L Switching Iftmsistors/MQV's ^ g SWITCHING TRANSISTORS TO-220AB TO-220F kcont. V c e o s u s Volts Pc Device type Amps. Max. Min. Watts NPN 3 400 600 60 40 2SC2929 2SC3549 4 250 60 2SD1073

2SC372Y

Abstract: 2N5027 2SC372-Y 2SC1335 2SC1766C G50N50 NPN 2sc372 2N1410A 2N1410 2SC306
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133

2SC1766C

Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133

2SC2550

Abstract: 2SA1090 2SC400 2SC970 2sa467 2SC1380A 2SC372 NPN 2sc372 2SC395A 2SC979A
Contextual Info: Powered by ICminer.com 7. INDUSTRIAL APPLICATIONS TO-92 -3 o to X H 00 > Electronic-Library Type No. Application NPN I PNP v CE0 •c PC V (mA) (mW) hFE Vqe (V) fT TYP. v CE(sat) M A X - 'c 'C 'b (mA) (mA) (V) (mA) Cob TYP. SW Time TYP. V CB tstg tf 'o (V)

2sc4977

Abstract: transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor
Contextual Info: FUJI STLSÊirtEDÊ SWITCHING TRANSISTORS Ée "j . '• ï>> I TÉjJii * N fq & zo \ _ < § P". m \k ‘ W » M î» T Is V l IC AMPS Max. 3 5 6 8 VcEoV J sus 800 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 700 80 2SC3505 Ppc IC AMPS

2SC367

Abstract: 2SC372
Contextual Info: 7. INDUSTRIAL APPLICATIONS TO-92 —3 O IX X H CD >• hFE Type No. Application NPN | PNP f T TYP. v CE sat) M A X - VCEO >C PC V CE •c (V) (mA) (mW) (V) (mA) (V) <C ■b (mA) (mA) (MHz) Cob TYP. V qe >c f=1MHz (V) (mA) (pF) SW Time TYP. VCB (V) ton tstg