NPN 33725 Search Results

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors

transistor BC 310

Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

C 337-25

Abstract: C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338
Contextual Info: BC 337 / BC 338 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0

10D3

Abstract: 1G14 C 337-40
Contextual Info: NPN TRANSISTORS ITT SEMICOND/ INTERMET ALL 3ME D • 4böH711 0002443 5 ■ ISI T - 3 i - o \ NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 ='TO-92 . On special request, these transistors will also be produced with TO -18 pin configuration.

c2328a

Abstract: B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors
Contextual Info: NPN Medium Power Transistors NPN Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO I CBO VCB I V hFE @ C & CE Min Max (mA) (V) (nA) @ (V) Max IC C ob (mA) @ (V) & (pF) I (V) Max (I = C ) Max Min Max B 10 V CE(SAT)

C 337-25

Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).

c33725

Abstract: c33740 Bc337
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 337 BC 338 • High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 327, BC 328 PNP Type Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1

JC337

Abstract: transistor 33725 C 33725 ph 63
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor JC337 FEATURES PINNING • Low curren t max. 500 mA PIN • Low voltage (max. 45 V).

C 337-25

Abstract: C 33725 BC337-25 NPN general purpose transistor BC337 BC337-16 BC337 NPN transistor datasheet BC337 bc33716 BC-337-16 BC33725
Contextual Info: BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

C 337-25

Abstract: TBC337 C 33725 338-25 tBC327
Contextual Info: SILICON NPN EPITAXIAL TYPE BC337/338 PRIMARLIY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS, PNP COMPLEMENTS ARE TBC327 AND TBC328. . High VcEO : 45V TBG337 25V (TBC338) . Low Saturation Voltage : VCE(sat)=0.7V(Max.) at lc=500mA MAXIMUM RATINGS (Ta=25°C)

OF TRANSISTOR BC337

Abstract: TRANSISTOR BC337-25 transistor 33725 TN3019A bc337 m transistor BC337-16 BC337-16 BC337-25 CBVK741B019 F63TNR
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

bc337 cross-reference

Abstract: bc337-16 bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

c 337 25

Abstract: 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337
Contextual Info: NPN Silicon AF Transistors BC 337 BC 338 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 PNP ● 2 1 Type Marking Ordering Code BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338

BC183A

Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
Contextual Info: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B

C 337-25

Abstract: BC337-25 bc33725 BC337-16 BC-337-16 bc33716 BC337
Contextual Info: S E M IC O N D U C T O R tm BC337-16 BC337-25 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 m A. Sourced from Process 12. See TN 3019A for characteristics. Absolute Maximum RâtinÇjS

C 337-25

Abstract: BC337 figure BC337 MOTOROLA bc338-40 BC337-40 SBC337
Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN Silicon BC337,-1 6 ,-2 5 ,-4 0 B C 338,-16 ,-2 5 ,-4 0 COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC337 BC338 25 Vdc 30 Vdc Unit VCEO 45 C ollector-B ase Voltage

BC413B

Abstract: BC413C BC414B BC414C BC337-25 BC337-40 BC337A BC338 BC338-16 BC338-25
Contextual Info: TO-92 Plastic Package Transistors NPN _ _ Maxim um Ratings Type No. BC 337-25 ^CEO ^EBO PD (V) Min (V) Min (V) Min (W) 45 5 (A) ^CB 'c e s ^CE (V) (HA) Max @ (V) Max @Tc=25°c 0 .625 'cBO <mA) 0.5 0.1 20 »FE Min BC337A 50 60 45 60 5 5 0.625 0.625 0.5

transistors BC 487

Abstract: 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

BC 546 BP

Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

2N6078

Contextual Info: MOTOROLA SC -CDIODES/OPTO} 34 ]>E.| b3b7255 0037^44 T f §337255 M O T O R O L A SC D I O D E S /O P T O 34C 3 7 9 4 4 D T '3 3 '0 1 SILICON POWER TRANSISTOR DICE (continued) 2C6235 DIE NO. — NPN LINE SOURCE — PL500.746 This die provides performance equal to or better than that of

BSY84

Abstract: C 337-40 33740 npn 1W 40V to39 CA500 c 33740 BSY86 BC337 BC341 850mW
Contextual Info: General Purpo/e Tran/i/ter/ r T Y P E NO. PD NPN >C BVc b O l v Ceo b v E bo @ T A = 2 5 °C v C E s a t @ I c / l B h p E @ V C E @ *C Cob m ax. m ax. m in ./max. f T @ •c C A SE m in. <§> <§> 1 20 V 120V 120V 120V 90V 80V 80V 80V 80V 60V 6V 6V 6V

C 337-25

Abstract: C 33725 BC337-16 BC-337-16 BC337-25 bc33716 NPN 33725 BC337 33725
Contextual Info: S E M IC O N D U C T O R tm BC337-16 BC337-25 NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r use as g e n e ra l pu rp o se a m p lifie rs a n d sw itches requiring collecto r c u rrents to 500 m A. S o u rce d from P roce ss 12. S e e T N 3 0 1 9 A fo r ch a ra c te ris tic s.

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­