NPN 40W TRANSISTOR Search Results

BC817-40W

Abstract: BC817-16W BC817-25W bc817-16 diodes inc marking k6B
Contextual Info: SPICE MODELS: BC817-16W BC817-25W BC817-40W BC817-16W / -25W / -40W Lead-free Green NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · · · · Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications

marking code K6B

Abstract: bc817-40w DS30575 2 x 40w amplifier
Contextual Info: SPICE MODELS: BC817-16W BC817-25W BC817-40W BC817-16W / -25W / -40W Lead-free Green NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR NEW PRODUCT Features • · · · · · Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications

VK200 rfc

Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
Contextual Info: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.

40w amplifier

Abstract: 2sc3438 mitsubishi vcb 25M SC-62
Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3438 FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3438 is a silicon NPN epitaxial type transistor designed for OUTLINE DRAWING unit mm power supply, 20 to 40W output low frequency power amplifier drive application.

2SC4688

Abstract: 2SA1803
Contextual Info: SavantIC Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFM package ·Complement to type 2SA1803 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage

NTE477

Contextual Info: NTE477 Silicon NPN Transistor RF Power Output Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz

2SC3180

Abstract: 2SA1263
Contextual Info: SavantIC Semiconductor Product Specification 2SC3180 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1263 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage

2SA1803

Abstract: 2SC4688
Contextual Info: Product Specification www.jmnic.com 2SC4688 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SA1803 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage

2SC4688

Abstract: 2SA1803
Contextual Info: Inchange Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SA1803 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage

2sc3180n

Abstract: 2SA1263N 2SC3180 2SC3180N equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SC3180N Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1263N APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage

2SC5196

Abstract: 2SA1939
Contextual Info: SavantIC Semiconductor Product Specification 2SC5196 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage

2SC3180N

Abstract: 2SA1263N 2SC3180N equivalent 2SC318
Contextual Info: Inchange Semiconductor Product Specification 2SC3180N Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SA1263N APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage

2SC1863

Contextual Info: SavantIC Semiconductor Product Specification 2SC1863 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=7A ·Power dissipation –PC=40W @TC=25 APPLICATIONS ·Designed for general-purpose amplifier and switching applications

2SC1828

Contextual Info: SavantIC Semiconductor Product Specification 2SC1828 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=1A ·Power dissipation –PC=40W @TC=25 APPLICATIONS ·For power amplifier applications PINNING See Fig.2

Contextual Info: SEMICONDUCTOR T E C H N IC A L D A T A KIA8260AH BIPOLAR LINEAR INTEGRATED CIRCUIT MAX POWER 40W QUAD BTL AUDIO POWER AMPLIFIER The KIA8260AH is 4ch BTL audio power amplifier for car audio application. This IC can generate more high power : P outMAX=40W as it is included the pure complementary PNP and NPN

2SD896

Abstract: 2SB776
Contextual Info: SavantIC Semiconductor Product Specification 2SD896 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SB776 ·Wide area of safe operation APPLICATIONS ·100V/7A, AF 40W output applications PINNING PIN DESCRIPTION 1 Base

2SC1863

Abstract: 2SC186
Contextual Info: Inchange Semiconductor Product Specification 2SC1863 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=7A ·Power dissipation –PC=40W @TC=25℃ APPLICATIONS ·Designed for general-purpose amplifier and switching applications

2sd896

Abstract: 2SB776 2SB77
Contextual Info: Inchange Semiconductor Product Specification 2SD896 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SB776 ·Wide area of safe operation APPLICATIONS ·100V/7A, AF 40W output applications PINNING PIN DESCRIPTION 1 Base

2SC1828

Contextual Info: Inchange Semiconductor Product Specification 2SC1828 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=1A ·Power dissipation –PC=40W @TC=25℃ APPLICATIONS ·For power amplifier applications PINNING See Fig.2

2SD1893

Abstract: 2SB1253 2SD1893 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SD1893 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1253 APPLICATIONS ·Power amplification ·Optimum for 40W high-fidelity output

2SC1504

Abstract: 2sc150 2SC15-0 npn transistors 400V 1A
Contextual Info: Inchange Semiconductor Product Specification 2SC1504 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=40W @TC=25℃ APPLICATIONS ·High speed switching and linear amplification ·Switching regulators ,converters

2SC1504

Contextual Info: SavantIC Semiconductor Product Specification 2SC1504 Silicon NPN Power Transistors DESCRIPTION With TO-66 package •Continuous collector current-IC=2A ·Power dissipation -PD=40W @TC=25 · APPLICATIONS ·High speed switching and linear amplification ·Switching regulators ,converters

NTE480

Abstract: transistor 38W
Contextual Info: NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions.

Contextual Info: KSD363 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • Collector-Base Voltage V Cao=300V • Collector Current lc=6A • Collector Dissipation Pc=40W Tc=25t." ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage