NPN 431 Search Results

transistor smd code marking 431

Abstract: transistor smd marking 431 transistor smd marking 431.k 431.K marking code my SMD Transistor npn transistor smd code marking 420 SC74 marking 345 431 SMD CODE MARKING transistor smd code marking 102 PMBTA42DS
Contextual Info: PMBTA42DS NPN/NPN high-voltage double transistors Rev. 02 — 27 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN high-voltage double transistors in a small SOT457 SC-74 Surface Mounted Device (SMD) plastic package. 1.2 Features

SC74 marking 345

Abstract: transistor smd marking 431 transistor smd marking 431.k 431 SMD CODE MARKING transistor smd code marking 431 PMBTA42DS tsop6 marking 345 MARKING CODE SMD IC transistor smd marking 431 K SC marking code NPN transistor
Contextual Info: PMBTA42DS NPN/NPN high-voltage double transistors Rev. 01 — 6 January 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN high-voltage double transistors in a small SOT457 SC-74 Surface Mounted Device (SMD) plastic package. 1.2 Features

431.K

Abstract: transistor smd code marking 431 transistor smd marking 431 transistor smd code marking 420 transistor smd marking 431.k 431 SMD CODE MARKING TRANSISTOR SMD MARKING CODE SP PBSS4160DS PBSS5160DS SC74 marking 345
Contextual Info: PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat BISS transistor Rev. 02 — 27 June 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

PBSS4160DS

Abstract: transistor smd code marking 431 PBSS5160DS
Contextual Info: PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat BISS transistor Rev. 04 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

transistor smd marking 431.k

Abstract: transistor smd code marking 420 transistor smd code marking 431 MARKING SMD PNP TRANSISTOR B8 transistor smd marking 431 SMD TRANSISTOR MARKING B8 TRANSISTOR SMD MARKING CODE 278 PBSS4160DS PBSS5160DS SC74 marking 345
Contextual Info: PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat BISS transistor Rev. 03 — 9 February 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

431.K

Abstract: transistor smd marking 431 transistor smd code marking 431 transistor smd marking 431.k 431 SMD CODE MARKING 431 TRANSISTOR smd marking code 4e PIMN31 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE
Contextual Info: PIMN31 500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor RET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

SMD MARKING CODE 4E

Abstract: marking code 4e smd TRANSISTOR code marking 2007
Contextual Info: PIMN31 500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor RET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

993 395 pnp npn

Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10

2SC2320L

Abstract: h a 431 transistor RO10K
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320L is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING Unit:mrn < 5.6MAX

MJE15020

Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment

D45H11 equivalent replacement

Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS

BU108

Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS

2SC2246

Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,

PNP Transistor DPAK

Contextual Info: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS

BU108

Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:

2SA1046

Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated

BU108

Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —

transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —

transistor SMD t4

Abstract: PDTC143XE marking code E2 p SMD Transistor PDTA143 PDTA143XE PDTA143X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143X series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2002 Jan 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;

BU108

Abstract: 2SC7 BD 148 transistor Bd 458 2SC1419 BU326 BU100 2SC101
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

Contextual Info: rZ Z SGS-THOMSON ^7# ssaœ iiuiÊTO©«e8 BUR52 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR • MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL

BU208A equivalent

Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching

2SD418

Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,