NPN 500V Search Results

NPN 500V Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
2SC5200	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)

NPN 500V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BU941 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM	Original	BU941 BU941L-T3P-T BU941G-T3P-T BU941L-TA3-T BU941G-TA3-T BU941L-TQ2-T BU941G-TQ2-T BU941L-TQ2-R BU941G-TQ2-R O-220 BU941	PDF
vbe 10v, vce 500v NPN Transistor Abstract: transistor ignition circuit bu941 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM	Original	BU941 BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-T BU941L-TQ2-T BU941-TQ2-R BU941L-TQ2-R O-220 vbe 10v, vce 500v NPN Transistor transistor ignition circuit bu941	PDF
hFE-100 Abstract: NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941 Contextual Info: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES NPN darlington Integrated antiparallel collector-emitter diode APPLICATIONS TO-3P * High ruggedness electric ignitions 1: BASE 2:COLLECTOR 3: EMITTER	Original	BU941 QW-R214-004 hFE-100 NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941	PDF
ignition coil bu941l Abstract: hFE-100 utc 1018 bu941l ignition coil bu941 NPN Transistor 10A 24V ignition coil npn power darlington BU941L-T3P-T vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM	Original	BU941 BU941L BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-R BU941L-TQ2-R BU941-TQ2-T BU941L-TQ2-T ignition coil bu941l hFE-100 utc 1018 bu941l ignition coil bu941 NPN Transistor 10A 24V ignition coil npn power darlington BU941L-T3P-T vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor	PDF
NPN Transistor 10A 24V Contextual Info: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES NPN darlington Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER	Original	BU941 O-220 QW-R203-025 NPN Transistor 10A 24V	PDF
hFE-100 Abstract: NPN Transistor 10A 24V utc 1018 transistor ignition circuit bu941 BU941 ignition coil bu941 npn high voltage transistor 500v 8a NPN DARLINGTON 10A 500V 12SAFE hFE100 Contextual Info: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES NPN darlington Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER	Original	BU941 O-220 QW-R203-025 hFE-100 NPN Transistor 10A 24V utc 1018 transistor ignition circuit bu941 BU941 ignition coil bu941 npn high voltage transistor 500v 8a NPN DARLINGTON 10A 500V 12SAFE hFE100	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-K QW-R223-020	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-F-K 13003EDAL-T92-F-B QW-R223-020	PDF
Contextual Info: 2N5010 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 500V 0.41 (0.016)	Original	2N5010 O205AD) 10/25m 19-Jun-02	PDF
Contextual Info: 2N5010 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 500V 0.41 (0.016)	Original	2N5010 O205AD) 10/25m 17-Jul-02	PDF
2N5010 Contextual Info: 2N5010 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 500V 0.41 (0.016)	Original	2N5010 O205AD) 10/25m 1-Aug-02 2N5010	PDF
Contextual Info: BUX55 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 500V 0.41 (0.016) 0.53 (0.021)	Original	BUX55 O205AD) 19-Jun-02	PDF
BUX55 Contextual Info: BUX55 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 500V 0.41 (0.016) 0.53 (0.021)	Original	BUX55 O205AD) 1-Aug-02 BUX55	PDF
NTE394 Contextual Info: NTE394 Silicon NPN Transistor Power Amp, High Voltage Switch Description: The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching applications. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V	Original	NTE394 NTE394 100mA,	PDF

NPN VCEO 500V sot23 Abstract: ZTX857 FZT657 ZTX458 Contextual Info: High Voltage Transistors NPN High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance NPN specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line	Original	FZT857 ZTX857 FZT657 OT223 OT223 NPN VCEO 500V sot23 ZTX458	PDF
NTE2550 Abstract: NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor Contextual Info: NTE2550 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V	Original	NTE2550 NTE2550 NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor	PDF
NTE2317 Abstract: automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor Contextual Info: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter	Original	NTE2317 NTE2317 150mA automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor	PDF
Contextual Info: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter	Original	NTE2317 NTE2317	PDF
Contextual Info: # Central CJD47 CJD50 semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD47, CJD50 types are NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage applications such as power supplies and other switching	OCR Scan	CJD47 CJD50 CJD47, CJD50 200mA,	PDF
nte2317 Abstract: automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor Contextual Info: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter	Original	NTE2317 NTE2317 150mA automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor	PDF
nte175 Abstract: NTE38 Contextual Info: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching	Original	NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA nte175	PDF
automotive ignition Abstract: NTE2316 105w vce 500v NPN Transistor Contextual Info: NTE2316 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2317 is an NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter circuits for motor controls.	Original	NTE2316 NTE2317 140mA, automotive ignition NTE2316 105w vce 500v NPN Transistor	PDF
NTE3042 Abstract: dsa0023459 Contextual Info: NTE3042 Optoisolator NPN Transistor Output Description: The NTE3042 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6–Lead DIP type package. Features: D 1500V Isolation	Original	NTE3042 NTE3042 dsa0023459	PDF
TO5 package Abstract: BUL54A-TO5 Contextual Info: BUL54A-TO5 Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)	Original	BUL54A-TO5 O205AA) 20-Aug-02 TO5 package BUL54A-TO5	PDF

NPN 500V Search Results

NPN 500V Result Highlights (5)

NPN 500V Datasheets Context Search

BU941

vbe 10v, vce 500v NPN Transistor

hFE-100

ignition coil bu941l

NPN Transistor 10A 24V

hFE-100

2N5010

BUX55

NTE394

NPN VCEO 500V sot23

NTE2550

NTE2317

nte2317

nte175

automotive ignition

NTE3042

TO5 package