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    NPN 60V 600MW Search Results

    NPN 60V 600MW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN 60V 600MW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3035

    Abstract: 2N1994 bls100 2N1169 500HM ST5610 BLS100 siliconix
    Text: ADDITIONAL TRANSISTORS Item Number Part Number Manufacturer PolarIty Mati. Description Package Style Avalanch Transistors CK273 2N3033 2N3034 2N3035 2N5271 ASZ23 5 SemiconTech See Index See Index See Index See Index NthAmerSemi NPN NPN NPN NPN NPN PNP Si Si


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    PDF CK273 2N3033 2N3034 2N3035 2N5271 ASZ23 BVCBO-25V. Pt-300mW BVCBO-160V IC-10A 2N1994 bls100 2N1169 500HM ST5610 BLS100 siliconix

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N489-2N494, A, B NPN SILICON UNIJUNCTION TRANSISTOR Silicon unijunction transistors are three-terminal device having a stable “N” type negative resistance characteristic over a wide temperature range. FEATURES • • • • •


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    PDF 2N489-2N494, MIL-PRF-19500, 450mW 600mW

    2N3904DCSM

    Abstract: 2N3904D dual npn 500ma LE17
    Text: SILICON EPITAXIAL DUAL NPN TRANSISTORS 2N3904DCSM • Dual Silicon Planar NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Designed For General Purpose and Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


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    PDF 2N3904DCSM 200mA 500mW 600mW MO-041BB) 2N3904DCSM 2N3904D dual npn 500ma LE17

    TRANSISTOR 2n697

    Abstract: No abstract text available
    Text: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N697 • Hermetic TO39 TO-205AD Metal Package. • Ideally suited for General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER VEBO PD PD


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    PDF 2N697 O-205AD) 600mW 20MHz 300us, TRANSISTOR 2n697

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N697 • Hermetic TO39 TO-205AD Metal Package. • Ideally suited for General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER VEBO PD PD


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    PDF 2N697 O-205AD) 600mW 300us,

    30VDC

    Abstract: 2N3904
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number 2N3904 product family TO-92 Plastic-Encapsulate Biploar Transistors


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    PDF 2N3904 200mA 600mW 300MHz 10mAdc, 10mAdc 30VDC 2N3904

    ISC4356AS1

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 ISC4356AS1 PRELIMINARY FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE Notice: This is not a final specification Some parametric are subject to change. DESCRIPTION OUTLINE DRAWING Unit:mm ISC4356AS1 is a silicon NPN epitaxial type transistor


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    PDF ISC4356AS1 ISC4356AS1 600mW

    2n4401 smd

    Abstract: 2N4401 smd 2n4401
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number 2N4401 product family TO-92 Plastic-Encapsulate Biploar Transistors


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    PDF 2N4401 600mW 250MHz 100kHz) 30Vdc, 150mAdc, 15mAdc) 150mAdc 2n4401 smd 2N4401 smd 2n4401

    Untitled

    Abstract: No abstract text available
    Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2274 █ APPLICATIONS Low frequency power amplifier Applications. █ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 T stg ——Storage Temperature………………………… -55~150℃


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    PDF H2274 600mW 500mA 10AIC 400mA 400mA,

    NTE2672

    Abstract: VEBO-15V
    Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector-Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector-Base Voltage: VEBO ≥ 15V Applications: D Low Frequency, General Purpose Amp


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    PDF NTE2672 100mA, NTE2672 VEBO-15V

    npn 60V 600mw

    Abstract: NTE2672 voltage 15v,collector current 40mA VEBO-15V
    Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector−Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector−Base Voltage: VEBO ≥ 15V


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    PDF NTE2672 100mA, npn 60V 600mw NTE2672 voltage 15v,collector current 40mA VEBO-15V

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


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    PDF Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    induction cooker schematic diagram

    Abstract: AQG22212 210HL induction cooker block diagrams 211EH DIP4 aqv234 044 schematic diagram induction furnace 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM AQV251G 500w amply
    Text: Global Network North America Europe Asia Pacific China Japan Panasonic Electric Works Please contact our Global Sales Companies in: Europe  Headquarters Panasonic Electric Works Europe AG Rudolf-Diesel-Ring 2, 83607 Holzkirchen, Tel. +49 0 8024 648-0, Fax +49 (0) 8024 648-111, www.panasonic-electric-works.com


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    PDF RM1205-9, induction cooker schematic diagram AQG22212 210HL induction cooker block diagrams 211EH DIP4 aqv234 044 schematic diagram induction furnace 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM AQV251G 500w amply

    PN3643

    Abstract: PN3641 PN3642
    Text: m PN3641 PN3642 PN3643 ff NPN SILICON TRANSISTORS TO-92A PN3641, PN3642 & PN3643 are NPN silicon planar transistors designed for small signal general purpose amplifiers and switches. EBC ABSOLUTE MAXIMUM RATINGS PN3641 PN3642 PN3643 Collector-Base Voltage


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    PDF PN3641 PN3642 PN3643 PN3641, PN3642 PN3643 O-92A

    Untitled

    Abstract: No abstract text available
    Text: WA PN3568 NPN SILICON TRANSISTOR PN3568 is NPN silicon planar epitaxial transistor TO-92 designed for amplifier and switching applications for collector current up to 500mA. ABSOLUTE MAXIMUM RATINGS EBC Collector-Base Voltage vCB0 Collector-Emitter Voltage


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    PDF PN3568 PN3568 500mA. 500mA 600mW 100nA 150mA

    PN3568

    Abstract: No abstract text available
    Text: PN3568 NPN SILICON TRANSISTOR PN3568 is NPN silicon planar epitaxial transistor designed for amplifier and switching applications for collector current up to 500mA. TO-92 I ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage vCE0 Emitter-Base Voltage


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    PDF PN3568 500mA. 500mA 600mW 150mA 300uS,

    PN3568

    Abstract: Q32J ic100na
    Text: V- :f.¡>O PN3568 is NPN silicon planar epitaxial transistor PN3568 NPN SILICON TRANSISTOR TO-92 designed for amplifier and switching applications for collector current up to 500mA. ABSOLUTE MAXIMUM RATINGS EBC Collector-Base Voltage vCB0 Collector-Emitter Voltage


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    PDF PN3568 PN3568 500mA. 500mA 600mW 100nA 150mA 300tiS, Q32J ic100na

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


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    PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp