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    NPN 800V Search Results

    NPN 800V Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    NPN 800V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018

    13003bd

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BDG Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003BDG 13003BDG 13003BDGL-TM3-T 13003BDGL-T60-F-K 13003BDGL-T92-F-B QW-R223-017 13003bd

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300t QW-R223-018.

    N5027

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD N5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR 1 TO-220 FEATURES * High Voltage VCEO = 800V * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: N5027L ORDERING INFORMATION


    Original     		PDF N5027 O-220 O-220F N5027L N5027-x-TA3-T N5027L-x-TA3-T N5027-x-TF3-T N5027L-x-TF3-T N5027

    N5027

    Abstract: transistor 800V 1A
    Text: UNISONIC TECHNOLOGIES CO., LTD N5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR 1 TO-220 FEATURES * High Voltage VCEO = 800V * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: N5027L ORDERING INFORMATION


    Original     		PDF N5027 O-220 O-220F N5027L N5027-x-TA3-F-T N5027L-x-TA3-F-T N5027-x-TF3-F-T N5027L-x-TF3-F-T N5027 transistor 800V 1A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-F-K 13003BSL-T92-F-B 13003BSL-T92-F-K QW-R223-018

    2SC3149

    Abstract: 2SC3149L 2sc3149g
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3149 Preliminary NPN SILICON TRANSISTOR NPN TEANSISTOR „ DESCRIPTION The UTC 2SC3149 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications. „ FEATURES * Suit for power amplifier applications


    Original     		PDF 2SC3149 2SC3149 2SC3149L 2SC3149G 2SC3149-T60-K 2SC3149L-T60-K 2SC3149G-T60-K O-126 2SC3149L 2sc3149g

    transistor ic1A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „


    Original     		PDF 5302D 5302D 5302DL 5302DG 5302D-TM3-T 5302DL-TM3-T 5302DG-TM3-T O-251 QW-R213-018. transistor ic1A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES


    Original     		PDF 5302D 5302D OT-223 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K O-126 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K

    2sc3149

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3149 Preliminary NPN SILICON TRANSISTOR NPN TRANSISTOR „ DESCRIPTION The UTC 2SC3149 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications. „ FEATURES * Suit for power amplifier applications


    Original     		PDF 2SC3149 2SC3149 2SC3149L-T60-K 2SC3149G-T60-K O-126 2SC3149L-T60-K O-126 QW-R204-024

    Untitled

    Abstract: No abstract text available
    Text: 2N5013 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 800V 0.41 (0.016)


    Original     		PDF 2N5013 O205AD) 10/25m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5013 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 800V 0.41 (0.016)


    Original     		PDF 2N5013 O205AD) 10/25m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES


    Original     		PDF 5302D 5302D 5302DL-AA3-R 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K

    NTE369

    Abstract: Transistor 800V
    Text: NTE369 Silicon NPN Transistor TV Vertical Deflection, Switch Description: The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCBO = 800V D Gain Specified to 200mA


    Original     		PDF NTE369 NTE369 200mA 200mA, 500mA, 100mA, Transistor 800V

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR „ DESCRIPTION The UTC 5302 is a NPN silicon planar transistor and suited to be used in power amplifier applications. „ 1 TO-251 FEATURES * Makes efficient anti-saturation operation


    Original     		PDF O-251 5302L-TM3-T 5302G-TM3-T QW-R213-020

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „ FEATURES


    Original     		PDF 5302D O-251 5302D O-252 O-126 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K

    5302D

    Abstract: 5302D-TM3-T 5302DL
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „ FEATURES


    Original     		PDF 5302D O-251 5302D O-126 5302DL 5302DG 5302D-T60-T 5302D-TM3-T 5302DL-TM3-T 5302DL-T60-T 5302D-TM3-T 5302DL

    5302D

    Abstract: 5302DL
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „ FEATURES


    Original     		PDF 5302D O-251 5302D O-126 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K 5302DL

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. „ FEATURES * Internal free-wheeling diode


    Original     		PDF 5302D 5302D 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K 5302DL-T92-R 5302DG-T92-R

    transistor VCE 1000V

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
    Text: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:


    Original     		PDF NTE2333 NTE2333 130mA, 650mA 600mA, transistor VCE 1000V npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a

    13003h

    Abstract: APT13003HZTR-G1 APT13003 bcd GU13003H APT13003 13003HZ-G1
    Text: Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003H series are high voltage, high speed switching NPN power transistors specially designed for off-line switch mode power supplies with low output power. •


    Original     		PDF APT13003H APT13003H O-126 O-126 13003h APT13003HZTR-G1 APT13003 bcd GU13003H APT13003 13003HZ-G1

    st 393

    Abstract: BUL805 JESD97
    Text: BUL805 High voltage fast-switching NPN Power Transistor Preliminary Data General features • NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed


    Original     		PDF BUL805 2002/93/EC O-220 st 393 BUL805 JESD97

    NTE2300

    Abstract: No abstract text available
    Text: NTE2300 Silicon NPN Transistor High Voltage, Horizontal Output Description: The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen color TV deflection circuits. Features: D High Breakdown Voltage and High Reliability


    Original     		PDF NTE2300 NTE2300 100mA, 200mA,