NPN 800V Search Results

NPN 800V Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
2SC5200	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)

NPN 800V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018	PDF
13003bd Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003BDG Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003BDG 13003BDG 13003BDGL-TM3-T 13003BDGL-T60-F-K 13003BDGL-T92-F-B QW-R223-017 13003bd	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300t QW-R223-018.	PDF
N5027 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD N5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR 1 TO-220 FEATURES * High Voltage VCEO = 800V * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: N5027L ORDERING INFORMATION	Original	N5027 O-220 O-220F N5027L N5027-x-TA3-T N5027L-x-TA3-T N5027-x-TF3-T N5027L-x-TF3-T N5027	PDF
N5027 Abstract: transistor 800V 1A Contextual Info: UNISONIC TECHNOLOGIES CO., LTD N5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR 1 TO-220 FEATURES * High Voltage VCEO = 800V * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: N5027L ORDERING INFORMATION	Original	N5027 O-220 O-220F N5027L N5027-x-TA3-F-T N5027L-x-TA3-F-T N5027-x-TF3-F-T N5027L-x-TF3-F-T N5027 transistor 800V 1A	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-F-K 13003BSL-T92-F-B 13003BSL-T92-F-K QW-R223-018	PDF
2SC3149 Abstract: 2SC3149L 2sc3149g Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC3149 Preliminary NPN SILICON TRANSISTOR NPN TEANSISTOR DESCRIPTION The UTC 2SC3149 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications. FEATURES * Suit for power amplifier applications	Original	2SC3149 2SC3149 2SC3149L 2SC3149G 2SC3149-T60-K 2SC3149L-T60-K 2SC3149G-T60-K O-126 2SC3149L 2sc3149g	PDF
transistor ic1A Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications.	Original	5302D 5302D 5302DL 5302DG 5302D-TM3-T 5302DL-TM3-T 5302DG-TM3-T O-251 QW-R213-018. transistor ic1A	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES	Original	5302D 5302D OT-223 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K O-126 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K	PDF
2sc3149 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC3149 Preliminary NPN SILICON TRANSISTOR NPN TRANSISTOR DESCRIPTION The UTC 2SC3149 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications. FEATURES * Suit for power amplifier applications	Original	2SC3149 2SC3149 2SC3149L-T60-K 2SC3149G-T60-K O-126 2SC3149L-T60-K O-126 QW-R204-024	PDF
Contextual Info: 2N5013 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 800V 0.41 (0.016)	Original	2N5013 O205AD) 10/25m 19-Jun-02	PDF
Contextual Info: 2N5013 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 800V 0.41 (0.016)	Original	2N5013 O205AD) 10/25m 17-Jul-02	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES	Original	5302D 5302D 5302DL-AA3-R 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K	PDF

NTE369 Abstract: Transistor 800V Contextual Info: NTE369 Silicon NPN Transistor TV Vertical Deflection, Switch Description: The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCBO = 800V D Gain Specified to 200mA	Original	NTE369 NTE369 200mA 200mA, 500mA, 100mA, Transistor 800V	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION The UTC 5302 is a NPN silicon planar transistor and suited to be used in power amplifier applications. 1 TO-251 FEATURES * Makes efficient anti-saturation operation	Original	O-251 5302L-TM3-T 5302G-TM3-T QW-R213-020	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. FEATURES	Original	5302D O-251 5302D O-252 O-126 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K	PDF
5302D Abstract: 5302D-TM3-T 5302DL Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. FEATURES	Original	5302D O-251 5302D O-126 5302DL 5302DG 5302D-T60-T 5302D-TM3-T 5302DL-TM3-T 5302DL-T60-T 5302D-TM3-T 5302DL	PDF
5302D Abstract: 5302DL Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. FEATURES	Original	5302D O-251 5302D O-126 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K 5302DL	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES * Internal free-wheeling diode	Original	5302D 5302D 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K 5302DL-T92-R 5302DG-T92-R	PDF
transistor VCE 1000V Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a Contextual Info: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:	Original	NTE2333 NTE2333 130mA, 650mA 600mA, transistor VCE 1000V npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a	PDF
13003h Abstract: APT13003HZTR-G1 APT13003 bcd GU13003H APT13003 13003HZ-G1 Contextual Info: Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003H series are high voltage, high speed switching NPN power transistors specially designed for off-line switch mode power supplies with low output power. •	Original	APT13003H APT13003H O-126 O-126 13003h APT13003HZTR-G1 APT13003 bcd GU13003H APT13003 13003HZ-G1	PDF
st 393 Abstract: BUL805 JESD97 Contextual Info: BUL805 High voltage fast-switching NPN Power Transistor Preliminary Data General features • NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed	Original	BUL805 2002/93/EC O-220 st 393 BUL805 JESD97	PDF
NTE2300 Contextual Info: NTE2300 Silicon NPN Transistor High Voltage, Horizontal Output Description: The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen color TV deflection circuits. Features: D High Breakdown Voltage and High Reliability	Original	NTE2300 NTE2300 100mA, 200mA,	PDF

NPN 800V Search Results

NPN 800V Result Highlights (5)

NPN 800V Datasheets Context Search

13003bd

N5027

N5027

2SC3149

transistor ic1A

2sc3149

NTE369

5302D

5302D

transistor VCE 1000V

13003h

st 393

NTE2300