NPN DARLINGTON IC SCHEMATIC Search Results

BDW42G

Abstract: 30VDC BDW42 BDW46 BDW46G BDW47 BDW47G
Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

TO-220AB transistor package

Abstract: bdw42G
Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

2N6284G

Abstract: 2N6284-D 2N6287G 2N6286G 1N5825 2N6284 2N6286 2N6287
Contextual Info: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc −

2n6284

Contextual Info: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc −

2N6282 MOTOROLA

Abstract: 2N6282 2N6287 2n6285 1N5825 2N6283 2N6284 2N6286 MSD6100 2N6284 motorola
Contextual Info: MOTOROLA Order this document by 2N6282/D SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc —

2N605

Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
Contextual Info: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc

mj150* darlington mj15002

Abstract: BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 Typ — 2N6282, 2N6283, 2N6284

TIP140

Abstract: tip142 TIP141 transistor tip142 MPS-U52 pnp resistor darlington TIP142 power amplifier tip142/TIP147 AMPLIFIER CIRCUIT
Contextual Info: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V TIP142 * PNP

Contextual Info: TIP140, TIP141, TIP142, NPN ; TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − • • • Min hFE = 1000 @ IC

tip142/TIP147 AMPLIFIER CIRCUIT

Abstract: MPS-U52 TIP142 Application Note TIP140/D tip142/147 tip141 equivalent 1N5825 MSD6100 TIP140 TIP141
Contextual Info: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors TIP142 * . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V PNP

TIP14x

Abstract: TIP147G 80K-40 TIP140-D tip142g TIP141G
Contextual Info: TIP140, TIP141, TIP142, NPN ; TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − • • • Min hFE = 1000 @ IC

TIP142 Application Note

Abstract: TIP147 Application Note 300 watts amplifier schematics tip142/TIP147 AMPLIFIER CIRCUIT darlington TIP142 power amplifier TIP141 TIP142 TIP145 TIP142 TIP147 1N5825
Contextual Info: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors TIP142 * . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V PNP

bd775

Abstract: 2SC7 BD779 Diode BAY 61 bd776 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD777 PNP BD776 BD778 BD780 * Plastic Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and high–speed switching applications. • High DC Current Gain hFE = 1400 Typ @ IC = 2.0 Adc

2N6286

Abstract: 2n6284 2N6287 2N6284G 80 amp 30v npn darlington 2n6284 transistor circuit schematic
Contextual Info: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. Features •ăHigh DC Current Gain @ IC = 10 Adc hFE = 2400 (Typ) - 2N6284

Contextual Info: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc

1N5825

Abstract: 2N6283 2N6284 2N6286 2N6287 MSD6100 amplifier transistor 2N6284
Contextual Info: ON Semiconductort NPN 2N6283 Darlington Complementary Silicon Power Transistors 2N6284 . . . designed for general−purpose amplifier and low−frequency switching applications. PNP 2N6286 • High DC Current Gain @ IC = 10 Adc − • • w hFE = 2400 Typ − 2N6284

2N6284-D

Abstract: 1N5825 2N6283 2N6284 2N6286 2N6287 MSD6100
Contextual Info: ON Semiconductort NPN Darlington Complementary Silicon Power Transistors 2N6283 . . . designed for general–purpose amplifier and low–frequency switching applications. 2N6286 2N6284 PNP • High DC Current Gain @ IC = 10 Adc – • • 2N6287 hFE = 2400 Typ – 2N6284

2N6282

Contextual Info: ON Semiconductort NPN Darlington Complementary Silicon Power Transistors 2N6282 . . . designed for general−purpose amplifier and low−frequency switching applications. 2N6284* thru • High DC Current Gain @ IC = 10 Adc — • • PNP 2N6285 hFE = 2400 Typ — 2N6282, 2N6283, 2N6284

BDW41

Abstract: 1N5825 BDW40 BDW42 BDW46 BDW47 MSD6100
Contextual Info: MOTOROLA Order this document by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc.

1N5825

Abstract: BDW42 BDW46 BDW47 MSD6100
Contextual Info: ON Semiconductor NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47 * • High DC Current Gain – hFE = 2500 typ.) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:

NTE2540

Abstract: 600V NPN 2A
Contextual Info: NTE2540 Silicon NPN Transistor Darlington, High Voltage Switch Features: D High DC Current Gain: hFE = 600 Min VCE = 2V, IC = 2A D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

BDW45

Abstract: 1N5825 BDW42 BDW46 BDW47 MSD6100
Contextual Info: ON Semiconductort NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47 * • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:

TIP142 TRANSISTOR REPLACEMENT

Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V