NPN DPAK Search Results
NPN DPAK Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TK6R9P08QM |
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MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK |
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TK5R1P08QM |
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MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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2SC5198 |
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NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) |
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NPN DPAK Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LFP AK 56 D PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK. |
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PHPT610030NK OT1205 LFPAK56D) PHPT610030PK. PHPT610030NPK. AEC-Q101 | |
Contextual Info: LFP AK 56 D PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK. |
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PHPT610035NK OT1205 LFPAK56D) PHPT610030NK. PHPT610035PK. PHPT610035NPK. AEC-Q101 | |
Contextual Info: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. |
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PHPT610030NPK OT1205 LFPAK56D) PHPT610030NK. PHPT610030PK. AEC-Q101 | |
PNP Transistor DPAKContextual Info: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS |
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MJD200 MJD210 PNP Transistor DPAK | |
MJD200RL
Abstract: 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100
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MJD200 MJD210 MJD200/D MJD200RL 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100 | |
MJD200
Abstract: MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G
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MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G | |
MJD200
Abstract: MJD200G MJD200RLG MJD200T4G MJD210 MJD210G MJD210RLG MJD210T4
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MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RLG MJD200T4G MJD210 MJD210G MJD210RLG MJD210T4 | |
MJD210
Abstract: MJD210G MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G
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MJD200 MJD210 MJD200/D MJD210 MJD210G MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G | |
MJD200
Abstract: MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G
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MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G | |
1N5825
Abstract: MJD200 MJD210 MSD6100
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MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100 | |
NJVMJD210T4G
Abstract: PNP Transistor DPAK
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MJD200 MJD210, NJVMJD210T4G MJD200/D NJVMJD210T4G PNP Transistor DPAK | |
1N5825
Abstract: MJD200 MJD210 MSD6100
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MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100 | |
MJD200
Abstract: MJD210 fr 0204 TO252-DPAK 0212c
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MJD200 MJD210 O-252 MJD210. MJD200 MJD210 fr 0204 TO252-DPAK 0212c | |
1N5825
Abstract: MJD200 MJD210 MSD6100
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MJD200/D* MJD200/D 1N5825 MJD200 MJD210 MSD6100 | |
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Contextual Info: MJD200 NPN , MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − |
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MJD200 MJD210, NJVMJD210T4G MJD200/D | |
Contextual Info: MJD200 NPN , MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS |
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MJD200 MJD210 AEC-Q101 MJD200/D | |
Contextual Info: BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits |
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BUJ303CD OT428 Condition10 | |
bcp68t1
Abstract: BCP68T3 BCP69T1 SMD310
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BCP68T1 OT-223 r14525 BCP68T1/D bcp68t1 BCP68T3 BCP69T1 SMD310 | |
BCP68T1
Abstract: BCP68T3 BCP69T1 SMD310
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BCP68T1 OT-223 r14525 BCP68T1/D BCP68T1 BCP68T3 BCP69T1 SMD310 | |
DPAK
Abstract: MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G MJD210RL
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MJD200 MJD210 DPAK MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G MJD210RL | |
Contextual Info: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits |
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BUJ303AD OT428 | |
Contextual Info: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits |
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BUJ303AD OT428 | |
BUJ302ADContextual Info: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits |
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BUJ302AD OT428 BUJ302AD | |
STD724T4Contextual Info: STD724T4 NPN MEDIUM POWER TRANSISTOR n n SURFACE MOUNTING DEVICE IN MEDIUM POWER DPAK POWER PACKAGE AVAILABLE IN TAPE & REEL PACKING Figure 1: Package APPLICATIONS n VOLTAGE REGULATION n RELAY DRIVER n GENERIC SWITCH 3 DESCRIPTION The device is a NPN transistor manufactured |
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STD724T4 STD724T4 |