NPN LOW SATURATION TO-220 HIGH GAIN Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005ND56 TRANSISTOR NPN TO-220 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005ND66 TO-220 TRANSISTOR NPN FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005N96 TRANSISTOR NPN TO-220 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137A TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z Low Collector to Emitter Saturation Voltage VCE(sat) z Allowing Automatic Insertion with Radial Taping

TIP111

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP111 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use

darlington transistor NPN

Abstract: TIP110 60V transistor npn ic2a
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP111 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use

TIP112

Abstract: darlington transistor NPN
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR NPN TO-220 1. BASE FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TO-220 TRANSISTOR NPN FEATURES z High forward current transfer ratio hFE which has satisfactory linearity z Low collector to emitter saturation voltage VCE(sat)

2SD2137

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TO-220 TRANSISTOR NPN FEATURES z High forward current transfer ratio hFE which has satisfactory linearity z Low collector to emitter saturation voltage VCE(sat)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR NPN TO-220 1. BASE FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2012 TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z Low Saturation Voltage z High Power Dissipation 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD2137

Contextual Info: 2SD2137 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features — 2 3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping —

TIP112

Abstract: Darlington TRANSISTOR NPN
Contextual Info: TIP112 TO-220 Darlington Transistor NPN TO-220 1. BASE 2. COLLECTOR 1 Features — 2 3. EMITTER 3 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

darlington transistor NPN

Contextual Info: TIP111 TO-220 Darlington Transistor NPN TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features — — — 1 2 3 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sa1012

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SA1012 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . FEATURES *Low collector saturation voltage VCE sat =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-220

2SD1691

Abstract: transistor 2sd1691 2SB1151 2SD1691L 2SD*1691
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-126 1 TO-126C *Pb-free plating product number:2SD1691L ORDERING INFORMATION

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hfE=1000 @ V ce= 4V, lc = 1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -220 Complementary to TIP115/116/117

NPN Transistor 8A

Abstract: TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107

TIP112

Abstract: TIP110 TIP111 NPN Transistor VCEO 80V 100V TIP110 transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON TIP112 transistor NPN Transistor VCEO 80V 100V DC Current gain 100 Silicon NPN Darlington transistor TIP110
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP115/116/117

Contextual Info: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP115/116/117

TIP112

Abstract: transistor tip111
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP115/116/117

2SD1691

Abstract: 2SD1691L 2SB1151 TO-220F1 NPN
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-220F1 1 TO-126 1 TO-126C „ ORDERING INFORMATION Ordering Number Lead Free Plating