NPN MARKING C1S Search Results

s0918

Abstract: d7c transistor marking N10
Contextual Info: r Z Z SGS-THOMSON ^ 7 # MIDlSB§ ilLieTriBl iD©i S0918 SMALL SIGNAL NPN TRANSISTOR Type Marking S0918 N10 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . SMALL SIGNAL VHF AMPLIFICATION AND

DSC4001

Abstract: marking C1s DSC400
Contextual Info: Tentative DSC4001 Total pages page DSC4001 Silicon NPN epitaxial planar type For general amplifier Marking Symbol : C1 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

T0-92

Contextual Info: bfiF T> bSOHBQ m General Purpose Amplifiers and Switches continued Devices V CHHsmt) (Volts) Min NPN 30 MPSW01A PHP MPSW51A Min Max NATL SEMICON]) (DISCRETE) fT @ l e,- " », Hf e @ I c •c (mA) Max □ D 3 C1SSE 73T « N S C S mA (MHz) Min M Ì NF (ÍB)

marking p1r

Abstract: DO25 marking code P1R transistor marking t04 PMST5088 PMST5089
Contextual Info: Philips Semiconductors bbS3T31 ÜOES'IJïc? TQM W NPN general purpose transistors ” Product specification PMST5088; PMST5089 N AMER P H I L I P S / D I S C R E T E FEATURES APX b?E PIN CONFIGURATION • S-mini package • Low noise. DESCRIPTION NPN small signal transistor in a

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC9001 (Tentative) Silicon NPN epitaxial planar type For general amplification Complementary to DSA9001 • Absolute Maximum Ratings Ta = 25°C Parameter  Package Symbol Rating Unit Collector-base voltage (Emitter open)

marking code c1s

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC2001 (Tentative) Silicon NPN epitaxial planar type For general amplification Complementary to DSA2001 • Absolute Maximum Ratings Ta = 25°C Parameter  Package Symbol Rating Unit Collector-base voltage (Emitter open)

dsa5001

Abstract: DSC5001 MARKING c1s
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC5001 (Tentative) Silicon NPN epitaxial planar type For general amplification Complementary to DSA5001 • Absolute Maximum Ratings Ta = 25°C Parameter  Package Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: DSC5001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA5001 DSC2001 in SMini3 type package Unit: mm • Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE sat

DSC9001

Abstract: DSA9001 ZJC00441BED marking C1s
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC9001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA9001 • Features  Package  High forward current transfer ratio hFE with excellent linearity  Eco-friendly Halogen-free package

Contextual Info: DSC9001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA9001 DSC5001 in SSMini3 type package Unit: mm • Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE sat

DSC2001

Abstract: DSA2001 ZJC00438BED marking C1s npn marking C1S
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC2001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA2001 • Features  Package  High forward current transfer ratio hFE with excellent linearity  Eco-friendly Halogen-free package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC9001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA9001 DSC5001 in SSMini3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC2001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA2001 • Features  Package  Low collector-emitter saturation voltage VCE(sat)  High forward current transfer ratio hFE with excellent linearity

MARKING c1s SOT23-6

Abstract: C1R SOT23
Contextual Info: DSC2001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA2001 Unit: mm • Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC4001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA4001 DSC2001 in NS through hole type package • Package  Features  Code NS-B2-B-B  High forward current transfer ratio hFE with excellent linearity

DSC5001

Abstract: marking code c1s 460-210 DSA5001 ZJC00440BED DSC-5001
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC5001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA5001 • Features  Package  High forward current transfer ratio hFE with excellent linearity  Eco-friendly Halogen-free package

DSC4001

Abstract: DSA4001 marking code c1s
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC4001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA4001 DSC2001 in NS through hole type package • Package  Features  Code NS-B2-B-B M Di ain sc te

toshiba 1908

Abstract: RN1908
Contextual Info: TOSHIBA RN1907-RN1909 TOSHIBA TRANSISTOR RM1QD7 • » ■ v ■ ar m g SILICON NPN EPITAXIAL TYPE PCT PROCESS RMIQfia u « ■ m m mm g RN1QDQ ■ « ■ v ■ «r v U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS.

Contextual Info: X T U i m i TECHNOLOGY _ LT1364/LT1365 D ual and Q uad 70MHz, 1OOOV/|is O p Am ps F€RTUR€S DCSCRICTIOn • 70MHz Gain-Bandwidth ■ 1000V/us Slew Rale ■ 7.5mA Maximum Supply Current per Amplifier tional amplifiers with outstanding AC and DC perfor­

Contextual Info: SIEMENS Components for Entertainment Electronics 2 Band TV Tuner TUA 6026 Mixer-Oscillator-PLL with Unbalanced IF-Amplifier Preliminary Data Sheet 1998-09-01 Edition 1998-09-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich

2SK2396A

Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The

transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17