NPN PHOTO TRANSISTOR Search Results

PH101

Contextual Info: SEC PHOTO TRANSISTOR ELECTRON DEVICE PH101 NPN EPITAXIAL DARLINGTON PHOTOTRANSISTOR PHOTO DETECTOR -N E P O C SERIES - DESCRIPTION The PH101 is a miniature NPN sillicon phototransistor having exceptionally stable characteristics and high illuminance sensiti­

MAL12 PHOTO

Abstract: MAL12 Mali MAL11
Contextual Info: MAL11 MAL12 NPN m. fe ìil SILICON PHOTO DARLINGTON TRANSISTORS CASE T0-18L The M A L 1 1, MALI 2 are NPN silicon photo 0.185 darlington transistors for use in •l e n s 0.209 m a x sensitive photo detector circuits. They are supplied in selected light current groups.

MEL79

Abstract: 5mm npn phototransistor clear
Contextual Info: UKU NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL79 is NPN silicon planar photo­ transistor with 5mm clear transparent lens. It features ultra high illumination sensitivity and fast response time. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Emitter-Collector Voltage

color sensitive PHOTO TRANSISTOR

Abstract: Rise time of photo transistor KDT3002A npn photo transistor 3mm photo transistor
Contextual Info: Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in Φ3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor

Contextual Info: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor

transistor 0117

Abstract: MDL82
Contextual Info: MDL82 NPN SILICON PHOTO DARLINGTON TRANSISTOR DESCRIPTION « .9 7 • 0.117 MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. It features ultra high illumination

MRD300

Abstract: MR0300 MR0310 MRD310 mr030 transistor 1247 color sensitive PHOTO TRANSISTOR
Contextual Info: MRD300 silicon MRD310 50 V O LT PHOTO TRANSISTOR NPN SILICON NPN SILICO N HIGH S E N S IT IV ITY PHOTO TRANSISTOR . . . designed fo r application in industrial inspection, processing and control, counters, sorters, switching and logic circuits or any design

Contextual Info: N E C t,4S7SHS 002^ 57^ 4 BQE D ELECTRONICS INC T - M r l'ip i r PHOTO TRANSISTOR PH102 NPN EPITAXIAL PHOTOTRANSISTOR PHOTO DETECTOR DESCRIPTION The PH102 is a miniature NPN sillicon pnototransistor having exceptionally stable characteristics mounted in a

03F1

Abstract: TLN103A TPS603A
Contextual Info: TOSHIBA TPS603A TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS603A PHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION CONTROLLER OF HOME ELECTRIC EQUIPM ENT DETECTOR FOR STOBOSCOPIC CONTROL

MRD150

Abstract: Photo transistor with open base
Contextual Info: MRD150 silicon PLASTIC NPN SILICON PHOTO TRANSISTORS 40 VOLT MICRO-T NPN SILICON PHOTO TRANSISTOR . . . designed fo r application in punched card and tape readers, pattern and character recognition equipm ent, shaft encoders, industrial inspection processing and control, counters, sorters, switching and

Contextual Info: DESCRIPTION CRO MEL85 NPN SILICON PHOTO TRANSISTOR MEL85 is NPN silicon planar photo­ transistor. It is encapsulated in a 3mm diameter, low profile and flat top type water clear transparent epoxy package. It features ultra high illumination sensitivity, fast response time.

MEL79

Contextual Info: MEL79 NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL79 is NPN silicon planar photo­ transistor with 5mm clear transparent lens. It features ultra high illumination sensitivity and fast response time. ABSOLUTE MAXIMUM RATINGS 30V 5V 50mW -40 to +85°C -40 to + 10QX

Contextual Info: N EC ELECTRONICS INC 30E D L^27S55 0 02T77b b • T " .4 |-7 5 PHOTO INTERRUPTER PS4008 PHOTO INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS The PS4008 photo coupled interrupter module containing a GaAs in millimeters inches light em itting diode and an NPN silicon photo-transistor,

transistor 1052

Abstract: WPDT-317D photo darlington sensor Rise time of photo transistor p317d
Contextual Info: Photo Transistor Waitrony Module No.: WPDT-317D 1. General Description: The WPDT-317D is ; output NPN photo dai transistor mounted in an end black epoxy package. This photo darlington transistor narrow angular response. Dimensions 2. Features > > ^ > Compact 03mm

G1815

Abstract: g181 LHC-100 MEL709
Contextual Info: MEL709 NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3/4 5mm water clear package. This device is suitable for use in a light sensor of the industrial control application.

Contextual Info: ¡i, PHOTO TRANSISTOR w- HÿJTÏEÎJi W .W E PH101 NPN EPITAXIAL DARLINGTON PHOTOTRANSISTOR PHOTO DETECTOR -• -N E P O C SERIES - DESCRIPTION The PH101 is a miniature NPN sillicon phototransistor having exceptionally stable characteristics and high illuminance sensiti­

MEL709D

Contextual Info: MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION 04.98 0.196 MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 (5mm) light rejective epoxy package. Ali dimension in mm(inch) No Scale ToL : +/-0.3mm r0.7(0.03)

MEL78

Abstract: MIB31T
Contextual Info: IVI I KU NPN SILICON PHOTO TRANSISTOR DESCRIPTION M EL78 is NPN silicon planar photo­ transistor. It features illumination sensitivity, ultra fast high 03.15 0.124 response time. All dimension in mm(inch) No Scale Toi. : +/-0.3mm 5.3 M EL78 is spectrally and mechanically

waitrony

Abstract: WPDT-270 photo darlington sensor
Contextual Info: Photo Transistor Waitrony Module No.: WPDT-270 1. General Description: The WPDT-270 is a high output NPN photo darlington transistor mounted in a water clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.

TRANSISTOR 2341

Abstract: xp950nm
Contextual Info: CRO MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 5mm light rejective epoxy package. This device is suitable for use in a light sersor of the industial

MEL708

Contextual Info: CKO / u o NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL708 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.

toshiba 4b1

Abstract: 4b1 toshiba photo interrupter darlington sensor TLN107A TPS617 TLN107
Contextual Info: TO SHIBA TPS617 TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR Unit in mm PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT Visible light cut type black package High sensitivity : I l = 1.4mA (TYP.)

PHOTO TRANSISTOR

Abstract: Rise time of photo transistor photo transistor high current
Contextual Info: PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MB 1. GENERAL DESCRIPTION The HI-T70MB is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with clear epoxy encapsulation. This photo transistor have awide angular response and

NEC PS2001B

Abstract: PS2001B ps2001
Contextual Info: SEC PHOTO BECTM M DEVICE COUPLER PS2001B PHOTO COUPLER INDUSTRIAL USE -NEPO C SERIES - DESCRIPTION The PS2001B is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor. FEATURES PACKAGE DIMENSIONS • High isolation voltage