NPN POWER DARLINGTON TO-3 150W Search Results

BDX33C darlington pair

Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

Contextual Info: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available

150w darlington transistor to3 package

Abstract: LE17 MJ4035 TRANSISTOR C 1177
Contextual Info: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available

transistor darlington package to.3

Abstract: transistor mj3001 MJ2501 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin MJ3001 150w darlington transistor to3 package pnp 150w darlington transistor to3 package
Contextual Info: MJ2501 - PNP MJ3001 - NPN SEME LAB MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . COMPLEMENTARY DARLINGTON POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . APPLICATIONS 1 1 .4 3 (0 .4 5 0 )

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

150w darlington transistor to3 package

Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
Contextual Info: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly

Contextual Info: COMPLEMENTARY POWER DARLINGTON BDS 28A,B,C -N2 BDS 29A,B,C -N2 • High DC Current Gain • Hermetic Ceramic Surface Mount Package • Screening Options Available • Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

8946

Abstract: BDS28A BDS28B BDS28C BDS29A BDS29B BDS29C LE17
Contextual Info: COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 • High DC Current Gain • Hermetic Ceramic Surface Mount Package • Screening Options Available • Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

CM3A

Abstract: complementary darlington BDS28A BDS28B BDS28C BDS29A BDS29B BDS29C LE17
Contextual Info: COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A • High DC Current Gain • Hermetic Isolated TO-254AA Package • Screening Options Available • Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A • High DC Current Gain • Hermetic Isolated TO-254AA Package • Screening Options Available • Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 • High DC Current Gain • Hermetic Ceramic Surface Mount Package • Screening Options Available • Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

MJ3001

Abstract: MJ2501 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w
Contextual Info: MJ2501 & MJ3001 10A, 150W, 80V Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 Typical at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.

npn C 1740

Contextual Info: BDS29A BDS29B BDS29C MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) COMPLEMENTARY POWER DARLINGTON TO254 METAL TRANSISTORS 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535)

2N3055 series voltage regulator

Abstract: 2n3055 voltage regulator circuit diagram of 2N3055 series voltage regulator 2n3055 regulator 10a 2N3055 power supply circuit terminals of 2n3055 2N3055 power amplifier circuit pin configuration transistor 2n3055 NPN Transistor 2N3055 darlington positive negative voltage regulator variable
Contextual Info: National Semiconductor Application Note 82 May 1974 INTRODUCTION The LM125 is a precision, dual, tracking, monolithic voltage regulator. It provides separate positive and negative regulated outputs, thus simplifying dual power supply designs. Operation requires few or no external components depending on the application. Internal settings provide fixed output

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

BDS28B

Abstract: BDS28A BDS28C BDS29A BDS29B BDS29C LE17
Contextual Info: SEMELAB LTD ¿V I 37E D 0 6 iggßi 0133137 OOOOllö 3 • SMLB SEMELAB BDS 28A,B,C BDS 29A,B,C NEW PRODUCT COMPLEMENTARY POWER DARLINGTON SOT 93 METAL TRANSISTORS MECHANICAL FEATURES Dimensions in mm FEATURES 835 • HERMETICSOT93 METAL PACKAGE 03-7 • HIGH RELIABILITY

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: 2N6474 npn 40872 npn darlington 400v 15a transistor BDY29 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . . A A i 9U X 9U le a 1 .S A m ax. lc » 3 .S A m ax. P y « 10 W m ax. TO-391* P T - 8 .7 S W m u . (TO-391* 90 x 9 0

2n3055 voltage regulator

Abstract: isc 2n3055 transistor circuit diagram of 2N3055 series voltage regulator 2N3055 series voltage regulator 2n3055 regulator 10a 2N3055 power amplifier circuit diagram 2N3055 power supply circuit 7390 LM125 80 amp 30v npn darlington
Contextual Info: National Semiconductor Application Note 82 May 1974 INTRODUCTION The LM125 is a precision dual tracking monolithic voltage regulator It provides separate positive and negative regulated outputs thus simplifying dual power supply designs Operation requires few or no external components depending

SGS10004

Abstract: SGS10005P S100-04
Contextual Info: S G S-THOMSON Ü7E D | 7^2=1537 00174L1 7 | 67C 1 5 3 6 3 D « MULTIEPITAXIAL PLANAR NPN . , ~ T~ SG S10004 SGS10004P SG810005 , t ÎW & J S 5 Î5 K -.-V »ïS fc«S ADVANCE DATA HIGH VOLTAGE FAST SWITCHING The SG S10004/10005 are silicon power Darlington transistors with integrated base-emitter

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

Transistor 2n6099

Abstract: BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V H O M ETA XIA L-B A SE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* A it . AAi 9U X 9U le a 1 .S A max. lc » 3.S A max. Py « 10 W max. TO-391* PT - 8.7S W m u . (TO-391* 90 x 90 90 x lc * 4 A max.

RCA 40411 transistor

Abstract: rca 40411 audio amplifier with rca 40411 RCA 528 transistor 40411 40411 transistor 40411 RCA 40250 transistor BDY29 RCA 2N6254
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.